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Xiong X, Guan H, Li B, Yang S, Li W, Ren R, Wang J, Chen P. Cure Kinetics and Thermal Decomposition Behavior of Novel Phenylacetylene-Capped Polyimide Resins. Polymers (Basel) 2024; 16:1149. [PMID: 38675068 PMCID: PMC11054460 DOI: 10.3390/polym16081149] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Revised: 04/03/2024] [Accepted: 04/16/2024] [Indexed: 04/28/2024] Open
Abstract
Based on a novel phenylacetylene capped polyimide (PI) with unique high-temperature resistance, its curing kinetics and thermal decomposition behavior were investigated. The curing mechanism and kinetics were studied by differential scanning calorimetry (DSC), and the activation energy (Ea) and pre-exponential factor (A) of the curing reaction were calculated based on the Kissinger equation, Ozawa equation, and Crane equation. According to the curve of conversion rate changing with temperature, the relationship between the dynamic reaction Ea and conversion rate (α) was calculated by the Friedman equation, Starink equation, and Ozawa-Flynn-Wall (O-F-W) equation, and the reaction Ea in different stages was compared with the results of molecular dynamics. Thermogravimetric analysis (TGA) and a scanning electron microscope (SEM) were used to analyze the thermal decomposition behavior of PI resins before and after curing. Temperatures at 5% and 20% mass loss (T5%, T20%), peak decomposition temperature (Tmax), residual carbon rate (RW), and integral process decomposition temperature (IPDT) were used to compare the thermal stability of PI resins and cured PI resins. The results display that the cured PI has excellent thermal stability. The Ea of the thermal decomposition reaction was calculated by the Coats-Redfern method, and the thermal decomposition behavior was analyzed. The thermal decomposition reaction of PI resins at different temperatures was simulated by molecular dynamics, the initial thermal decomposition reaction was studied, and the pyrolysis mechanism was analyzed more comprehensively and intuitively.
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Affiliation(s)
- Xuhai Xiong
- Liaoning Key Laboratory of Advanced Polymer Matrix Composites, Shenyang Aerospace University, Shenyang 110136, China; (H.G.); (B.L.); (S.Y.); (W.L.); (R.R.); (J.W.)
| | - Hongyu Guan
- Liaoning Key Laboratory of Advanced Polymer Matrix Composites, Shenyang Aerospace University, Shenyang 110136, China; (H.G.); (B.L.); (S.Y.); (W.L.); (R.R.); (J.W.)
| | - Baiyu Li
- Liaoning Key Laboratory of Advanced Polymer Matrix Composites, Shenyang Aerospace University, Shenyang 110136, China; (H.G.); (B.L.); (S.Y.); (W.L.); (R.R.); (J.W.)
| | - Shuai Yang
- Liaoning Key Laboratory of Advanced Polymer Matrix Composites, Shenyang Aerospace University, Shenyang 110136, China; (H.G.); (B.L.); (S.Y.); (W.L.); (R.R.); (J.W.)
| | - Wenqiang Li
- Liaoning Key Laboratory of Advanced Polymer Matrix Composites, Shenyang Aerospace University, Shenyang 110136, China; (H.G.); (B.L.); (S.Y.); (W.L.); (R.R.); (J.W.)
| | - Rong Ren
- Liaoning Key Laboratory of Advanced Polymer Matrix Composites, Shenyang Aerospace University, Shenyang 110136, China; (H.G.); (B.L.); (S.Y.); (W.L.); (R.R.); (J.W.)
| | - Jing Wang
- Liaoning Key Laboratory of Advanced Polymer Matrix Composites, Shenyang Aerospace University, Shenyang 110136, China; (H.G.); (B.L.); (S.Y.); (W.L.); (R.R.); (J.W.)
| | - Ping Chen
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, China;
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Kim H, Park J, Khim T, Park J, Han C, Yoo J, Kim D, Song J, Choi B. Highly Reliable Flexible Device with a Charge Compensation Layer. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12863-12872. [PMID: 35234454 PMCID: PMC8932315 DOI: 10.1021/acsami.1c24820] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Accepted: 02/22/2022] [Indexed: 06/11/2023]
Abstract
Flexible devices fabricated with a polyimide (PI) substrate are essential for foldable, rollable, and stretchable products and various applications. However, inherent technical challenges remain in mobile charge-induced device instabilities and image retention, significantly hindering future technologies. Here, we introduce a new barrier material, SiCOH, into the backplane of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) and applied it to production-level flexible panels. We found that the SiCOH layer effectively compensates for the surface charging induced by fluorine ions at the interface between the PI substrate and the barrier layer under bias stress, thereby preventing abnormal positive shifts in threshold voltage (Vth) and image disturbance. The a-IGZO TFTs and metal-insulator-metal and metal-insulator-semiconductor capacitors with a SiCOH layer demonstrate reliable device performance, Vth shifts, and capacitance changes with an increase in gate bias stress. A flexible device with SiCOH enables the suppression of abnormal Vth shifts associated with PIs and plays a vital role in image sticking. This work provides new insights into process integrity and paves the way for expediting versatile form factors.
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Affiliation(s)
- Hyojung Kim
- Technology
Reliability Team, OLED Business, Samsung
Display Company, Limited, 181 Samsung-ro, Tangjeong-myeon, Asan-si 31454, Republic
of Korea
- Department
of Semiconductor and Display Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon-si 16419, Republic
of Korea
| | - Jongwoo Park
- Technology
Reliability Team, OLED Business, Samsung
Display Company, Limited, 181 Samsung-ro, Tangjeong-myeon, Asan-si 31454, Republic
of Korea
| | - Taeyoung Khim
- Technology
Reliability Team, OLED Business, Samsung
Display Company, Limited, 181 Samsung-ro, Tangjeong-myeon, Asan-si 31454, Republic
of Korea
| | - Jungmin Park
- Department
of Semiconductor and Display Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon-si 16419, Republic
of Korea
| | - Chanhee Han
- Department
of Electrical and Computer Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon-si 16419, Republic
of Korea
| | - Jongmin Yoo
- Department
of Electrical and Computer Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon-si 16419, Republic
of Korea
| | - Dongbhin Kim
- Department
of Electrical and Computer Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon-si 16419, Republic
of Korea
| | - Jangkun Song
- Department
of Electrical and Computer Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon-si 16419, Republic
of Korea
| | - Byoungdeog Choi
- Department
of Electrical and Computer Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon-si 16419, Republic
of Korea
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