Superconductivity in In-doped AgSnBiTe3 with possible band inversion

Density Functional Theory Study of the Spin-Orbit Insulating Phase in SnTe Cubic Nanowires: Implications for Topological Electronics

We investigate the electronic, structural, and topological properties of the SnTe and PbTe cubic nanowires using ab initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowire thicknesses observed experimentally. Finite-size effects in the ultrathin limit produce an electric quadrupole and associated structural distortions; these distortions increase the band gap, but they get reduced with the size of the nanowires and become less and less relevant. Ultrathin SnTe cubic nanowires are trivial band gap insulators; we demonstrate that by increasing the thickness, there is an electronic transition to a spin-orbit insulating phase due to trivial surface states in the regime of thin nanowires. These trivial surface states with a spin-orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thick nanowires, we should observe the transition to the topological crystalline insulator phase with the presence of two massive surface Dirac fermions hybridized with the persistent trivial surface states. Therefore, we have the copresence of massive Dirac surface states and trivial surface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowires are trivial insulators below the critical thickness tc1 = 10 nm, and they become spin-orbit insulators between tc1 = 10 nm and tc2 = 17 nm, while they transit to the topological phase above the critical thickness of tc2 = 17 nm. These critical thickness values are in the range of typical experimental thicknesses, making the thickness a relevant parameter for the synthesis of topological cubic nanowires. Pb1-xSnxTe nanowires would have both these critical thicknesses tc1 and tc2 at larger values depending on the doping concentration. We discuss the limitations of density functional theory in the context of topological nanowires and the consequences of our results on topological electronics.

Robustness of superconductivity to external pressure in high-entropy-alloy-type metal telluride AgInSnPbBiTe5

High-entropy-alloy (HEA) superconductors are a new class of disordered superconductors. However, commonality of superconducting characteristics of HEA materials is unclear. Here, we have investigated the crystal and electronic structure, and the robustness of superconducting states in a HEA-type metal telluride (MTe; M = Ag, In, Sn, Pb, Bi) under high pressure, and the results were compared with the pressure effects for a middle-entropy system (AgPbBiTe₃) and a reference system of PbTe. When the crystal structure is CsCl-type, all phases show superconductivity under high pressure but exhibit different pressure dependences of the transition temperature (T_c). For PbTe, its T_c decreases with pressure. In contrast, the T_c of HEA-type AgInSnPbBiTe₅ is almost independent of pressure, for pressures ranging from 13.0 to 35.1 GPa. Those results suggest that the robustness of superconductivity to external pressure is linked to the configurational entropy of mixing at the M site in MTe. Since the trend is quite similar to previous work on a HEA (Ti–Zr–Hf–Nb–Ta), where the robustness of superconductivity was observed up to ~ 200 GPa, we propose that the robustness of superconductivity under high pressure would be a universal feature in HEA-type superconductors.

Estimation of the Grüneisen Parameter of High-Entropy Alloy-Type Functional Materials: The Cases of REO0.7F0.3BiS2 and MTe

In functional materials such as thermoelectric materials and superconductors, the interplay between functionality, electronic structure, and phonon characteristics is one of the key factors to improve functionality and to understand the underlying mechanisms. In the first part of this article, we briefly review investigations on lattice anharmonicity in functional materials on the basis of the Grüneisen parameter (γG). We show that γG can be a good index for large lattice anharmonicity and for detecting a change in anharmonicity amplitude in functional materials. Then, we show original results on the estimation of γG for recently developed high-entropy alloy-type (HEA-type) functional materials with a layered structure and a NaCl-type structure. As a common trend for those two systems with two- and three-dimensional structures, we found that γG increased with a slight increase in the configurational entropy of mixing (ΔSmix) and then decreased with increasing ΔSmix in the high-entropy region.