Direct synthesis of nanostructured silver antimony sulfide powders from metal xanthate precursors

Semiconductor Deposition via Laser Printing of a Bespoke Toner Containing Metal Xanthate Complexes

A methodology to use laser printing, a form of electrophotography, to print metal chalcogenide complexes on paper, is described. After fusing the toner to paper, a heating step is used to cause the printed metal xanthate complexes to thermolyze within the toner and form three target metal chalcogenides: CuS, SnS, and ZnS. To achieve this, we synthesize a poly(styrene-co-n-butyl acrylate) thermopolymer that emulates the thermal properties of a commercial toner and is also solution processable with the metal xanthate complexes used: [Zn(S2COEt)2], [Cu(S2COEt)·(PPh3)2], and [Sn(S2COEt)2]. We demonstrate through energy dispersive X-ray mapping that the toner is deposited following printing and that thermolysis of the metal xanthate complexes occurs in the fused toner, demonstrating the first example of laser printing of inorganic complexes and, in turn, semiconductors.

Photodiode behaviors of the AgSbS2nanocrystals in a Schottky structure

Cubic phase AgSbS₂nanocrystals (NCs) were synthesized by the hot-injection method, and they were inserted between the Al andp-Si to fabricate Al/AgSbS₂/p-Si photodiode by the thermal evaporation method. AgSbS₂NCs were characterized by XRD, SEM and TEM instruments to confirm the crystal phase, surface morphology as well as crystalline size. The XRD pattern revealed that the cubic crystalline structure of the AgSbS₂. The spherical shapes and well surface morphology were affirmed by SEM and TEM analysis. Al/AgSbS₂/p-Si photodiode was characterized byI-Vmeasurements depending on the light power intensity and byC-Vmeasurement for various frequencies.I-Vcharacteristics revealed that the Al/AgSbS₂/p-Si exhibited good photodiode behavior and a high rectifying ratio. Various diode and detector parameters were extracted fromI-Vmeasurements, and they were discussed in detail. TheC-Vcharacteristics highlighted that the Al/AgSbS₂/p-Si photodiode showed voltage and frequency dependent profile at the accumulation region. The fabricated Al/AgSbS₂/p-Si photodiode can be thought for optoelectronic applications.