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Seok Y, Jang H, Choi Y, Ko Y, Kim M, Im H, Watanabe K, Taniguchi T, Seol JH, Chee SS, Nah J, Lee K. High-Field Electron Transport and High Saturation Velocity in Multilayer Indium Selenide Transistors. ACS NANO 2024; 18:8099-8106. [PMID: 38451218 DOI: 10.1021/acsnano.3c11613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Creating a high-frequency electron system demands a high saturation velocity (υsat). Herein, we report the high-field transport properties of multilayer van der Waals (vdW) indium selenide (InSe). The InSe is on a hexagonal boron nitride substrate and encapsulated by a thin, noncontinuous In layer, resulting in an impressive electron mobility reaching 2600 cm2/(V s) at room temperature. The high-mobility InSe achieves υsat exceeding 2 × 107 cm/s, which is superior to those of other gapped vdW semiconductors, and exhibits a 50-60% improvement in υsat when cooled to 80 K. The temperature dependence of υsat suggests an optical phonon energy (ℏωop) for InSe in the range of 23-27 meV, previously reported values for InSe. It is also notable that the measured υsat values exceed what is expected according to the optical phonon emission model due to weak electron-phonon scattering. The superior υsat of our InSe, despite its relatively small ℏωop, reveals its potential for high-frequency electronics, including applications to control cryogenic quantum computers in close proximity.
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Affiliation(s)
- Yongwook Seok
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - YiTaek Choi
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Yeonghyeon Ko
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Minje Kim
- Department of Electrical Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Heungsoon Im
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Jae Hun Seol
- School of Mechanical Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Sang-Soo Chee
- Nano Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju 52851, Republic of Korea
| | - Junghyo Nah
- Department of Electrical Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Kayoung Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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