Optical quantum technologies with hexagonal boron nitride single photon sources

Narrowband Electroluminescence from Color Centers in Hexagonal Boron Nitride

Defects in wide bandgap materials have emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of single emitters may lead to scalable on-chip devices and therefore is highly sought after. However, most wide bandgap materials are not amenable to efficient doping, posing challenges for electrical excitation and on-chip integration. Here, we demonstrate narrowband electroluminescence from visible and near-infrared color centers in hexagonal boron nitride (hBN). We harness van der Waals tunnel junctions of graphene-hBN-graphene. Charge carriers are electrically injected into hBN, exciting localized defects that emit nonclassical light, as characterized by the second order correlation measurement. Remarkably, the devices operate at room temperature and produce robust, narrowband emission spanning from visible to the near-infrared. Our work marks an important milestone in vdW materials and their promising attributes for integrated quantum technologies and on-chip photonic circuits.

Quantum Sensing of Spin Dynamics Using Boron-Vacancy Centers in Hexagonal Boron Nitride

Spin defects embedded in solid-state systems are appealing for quantum sensing of materials and for quantum science and engineering. The spin-sensitive photoluminescence of optically active spin defects in Van der Waals based materials, such as the boron-vacancy (V_{B}^{-}) center in hexagonal boron nitride, enables its application as a quantum sensor to detect weak, spatially localized magnetic static and dynamic fields. However, the utility of V_{B}^{-} centers to probe spin dynamics in magnetic systems has yet to be demonstrated; this is essential to establish the V_{B}^{-} as a modular sensing platform that can be seamlessly integrated with emergent quantum materials to probe a wide range of static and dynamic phenomena. Here, we use V_{B}^{-} centers to experimentally probe uniform mode magnon dynamics and optically perform ferromagnetic resonance spectroscopy on a thin magnetic film.

Electroluminescent vertical tunneling junctions based on WSe2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields

We experimentally demonstrate the creation of defects in monolayer WSe2 via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe2 monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.

Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride

Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years, thanks to their environmental robustness, high brightness, and room-temperature operation. Most recently, these quantum emitters have been employed for satellite-based quantum key distribution. One of the most important requirements to qualify these emitters for space-based applications is their optical stability against cryogenic thermal shock. Such an understanding has, however, remained elusive to date. Here, we report on the effects caused by such thermal shock that induces random, irreversible changes in the spectral characteristics of the quantum emitters. By employing a combination of structural characterizations and density functional calculations, we attribute the observed changes to lattice strain caused by cryogenic temperature shock. Our study sheds light on the stability of the quantum emitters under extreme conditions─similar to those countered in outer space.

Accelerating GW Calculations of Point Defects with the Defect-Patched Screening Approximation

The GW approximation has been widely accepted as an ab initio tool for calculating defect levels with the many-electron effect included. However, the GW simulation cost increases dramatically with the system size, and unfortunately, large supercells are often required to model low-density defects that are experimentally relevant. In this work, we propose to accelerate GW calculations of point defects by reducing the simulation cost of many-electron screening, which is the primary computational bottleneck. The random-phase approximation of many-electron screening is divided into two parts: one is the intrinsic screening, calculated using a unit cell of pristine structures, and the other is the defect-induced screening, calculated using the supercell within a small energy window. Depending on specific defects, one may only need to consider the intrinsic screening or include the defect contribution. This approach avoids the summation of many conduction states of supercells and significantly reduces the simulation cost. We have applied it to calculate various point defects, including neutral and charged defects in two-dimensional and bulk systems with small or large bandgaps. The results are consistent with those from the direct GW simulations. This defect-patched screening approach not only clarifies the roles of defects in many-electron screening but also paves the way to fast screen defect structures/materials for novel applications, including single-photon sources, quantum qubits, and quantum sensors.

Optically Active MXenes in Van der Waals Heterostructures

The vertical integration of distinct 2D materials in van der Waals (vdW) heterostructures provides the opportunity for interface engineering and modulation of electronic as well as optical properties. However, scarce experimental studies reveal many challenges for vdW heterostructures, hampering the fine-tuning of their electronic and optical functionalities. Optically active MXenes, the most recent member of the 2D family, with excellent hydrophilicity, rich surface chemistry, and intriguing optical properties, are a novel 2D platform for optoelectronics applications. Coupling MXenes with various 2D materials into vdW heterostructures can open new avenues for the exploration of physical phenomena of novel quantum-confined nanostructures and devices. Therefore, the fundamental basis and recent findings in vertical vdW heterostructures composed of MXenes as a primary component and other 2D materials as secondary components are examined. Their robust designs and synthesis approaches that can push the boundaries of light-harvesting, transition, and utilization are discussed, since MXenes provide a unique playground for pursuing an extraordinary optical response or unusual light conversion features/functionalities. The recent findings are finally summarized, and a perspective for the future development of next-generation vdW multifunctional materials enriched by MXenes is provided.

Color Centers in Hexagonal Boron Nitride

Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.

Hexagonal Boron Nitride for Photonic Device Applications: A Review

Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in the deep ultraviolet (DUV) and infrared (IR) wavelength bands owing to its indirect bandgap structure and hyperbolic phonon polaritons (HPPs). This review examines the physical properties and applications of hBN-based photonic devices that operate in these bands. A brief background on BN is provided, and the theoretical background of the intrinsic nature of the indirect bandgap structure and HPPs is discussed. Subsequently, the development of DUV-based light-emitting diodes and photodetectors based on hBN's bandgap in the DUV wavelength band is reviewed. Thereafter, IR absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy applications using HPPs in the IR wavelength band are examined. Finally, future challenges related to hBN fabrication using chemical vapor deposition and techniques for transferring hBN to a substrate are discussed. Emerging techniques to control HPPs are also examined. This review is intended to assist researchers in both industry and academia in the design and development of unique hBN-based photonic devices operating in the DUV and IR wavelength regions.

Strain tunable quantum emission from atomic defects in hexagonal boron nitride for telecom-bands

This study presents extending the tunability of 2D hBN Quantum emitters towards telecom (C-band - 1530 to 1560 nm) and UV-C (solar blind - 100 to 280 nm) optical bands using external strain inducements, for long- and short-range quantum communication (Quantum key distribution (QKD)) applications, respectively. Quantum emitters are the basic building blocks of this QKD (quantum communication or information) technologies, which need to emit single photons over room temperature and capable of tuning the emission wavelength to the above necessary range. Recent literature revealed that quantum emitters in 2D hBN only has the ability to withstand at elevated temperatures and aggressive annealing treatments, but density functional theory (DFT) predictions stated that hBN can only emit the single photons from around 290 to 900 nm (UV to near-IR regions) range. So, there is a need to engineer and further tune the emission wavelength of hBN quantum emitters to the above said bands (necessary for efficient QKD implementation). One of the solutions to tune the emission wavelength is by inducing external strain. In this work, we examine the tunability of quantum emission in hBN with point defects by inducing three different normal strains using DFT computations. We obtained the tunability range up to 255 nm and 1589.5 nm, for the point defects viz boron mono vacancies (V_B) and boron mono vacancies with oxygen atoms (V_BO₂) respectively, which can enhance the successful implementation of the efficient QKD. We also examine the tunability of the other defects viz. nitrogen mono vacancies, nitrogen mono vacancy with self-interstitials, nitrogen mono vacancy with carbon interstitials, carbon dimers and boron dangling bonds, which revealed the tunable quantum emission in the visible, other UV and IR spectrum ranges and such customized quantum emission can enhance the birth of other quantum photonic devices.

Spatially Resolved Dynamics of Cobalt Color Centers in ZnO Nanowires

The dynamics of color centers, being a promising quantum technology, is strongly dependent on the local environment. A synergistic approach of X-ray fluorescence analysis and X-ray excited optical luminescence (XEOL) using a hard X-ray nanoprobe is applied. The simultaneous acquisition provides insights into compositional and functional variations at the nanoscale demonstrating the extraordinary capabilities of these combined techniques. The findings on cobalt doped zinc oxide nanowires show an anticorrelation between the band edge emission of the zinc oxide host and the intra-3d cobalt luminescence, indicating two competing recombination paths. Moreover, time-resolved XEOL measurements reveal two exponential decays of the cobalt luminescence. The fast and newly observed one can be attributed to a recombination cascade within the cobalt atom, resulting from direct excitation. Thus, this opens a new fast timescale for potential devices based on cobalt color centers in ZnO nanowires in photonic circuits.

Radiometric calibration of a multiphoton microscope capable of measuring absolute photon flux of single photon sources

Precise photon flux measurement of single photon sources (SPSs) is essential to the successful application of SPSs. In this work, a novel method, to our knowledge, was proposed for direct measurement of the absolute photon flux of single photon sources with a femtosecond laser multiphoton microscope. A secondary 2-mm-diameter aperture was installed under the microscope objective to define the numerical aperture (NA) of the microscope. The defined NA was precisely measured to be 0.447. An LED-based miniaturized integrating sphere light source (LED-ISLS) was used as a standard radiance source to calibrate the photon flux responsivity of the multiphoton microscope, with the defined NA. The combined standard uncertainty of the measured photon flux responsivity was 1.97%. Absolute photon flux from a quantum-dot based emitter was measured by the multiphoton microscope. The uncertainty of the photon flux was evaluated to be 2.1%. This work offers a new, to our knowledge, radiometric method for fast calibration of photon flux responsivity of microscopes, and absolute photon flux calibration of single photon sources.