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Jasiński M. Advances in Plasma and Laser Engineering. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1768. [PMID: 38673125 PMCID: PMC11051216 DOI: 10.3390/ma17081768] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Accepted: 04/08/2024] [Indexed: 04/28/2024]
Abstract
Materials science, especially in the context of nanotechnology, plays a key role in today's world, contributing to the development of advanced materials with unique properties [...].
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Affiliation(s)
- Mariusz Jasiński
- Institute of Fluid Flow Machinery, Polish Academy of Sciences, Fiszera 14, 80-231 Gdańsk, Poland
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2
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Schätz J, Nayi N, Weber J, Metzke C, Lukas S, Walter J, Schaffus T, Streb F, Reato E, Piacentini A, Grundmann A, Kalisch H, Heuken M, Vescan A, Pindl S, Lemme MC. Button shear testing for adhesion measurements of 2D materials. Nat Commun 2024; 15:2430. [PMID: 38499534 PMCID: PMC10948857 DOI: 10.1038/s41467-024-46136-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2023] [Accepted: 02/15/2024] [Indexed: 03/20/2024] Open
Abstract
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene, hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on silicon dioxide and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying the adhesion of 2D materials.
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Affiliation(s)
- Josef Schätz
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Navin Nayi
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Jonas Weber
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469, Deggendorf, Germany
- Department of Applied Physics, University of Barcelona, Martí i Franquès 1, 08028, Barcelona, Spain
| | - Christoph Metzke
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469, Deggendorf, Germany
- Department of Electrical Engineering, Helmut Schmidt University/University of the Federal Armed Forces Hamburg, Holstenhofweg 85, 22043, Hamburg, Germany
| | - Sebastian Lukas
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Jürgen Walter
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Tim Schaffus
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Fabian Streb
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Eros Reato
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Agata Piacentini
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Annika Grundmann
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Holger Kalisch
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Michael Heuken
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
- AIXTRON SE, Dornkaulstr. 2, 52134, Herzogenrath, Germany
| | - Andrei Vescan
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Stephan Pindl
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Max C Lemme
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.
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3
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Dey A, Azizimanesh A, Wu SM, Askari H. Uniaxial Strain-Induced Stacking Order Change in Trilayer Graphene. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8169-8183. [PMID: 38295436 PMCID: PMC10875650 DOI: 10.1021/acsami.3c19101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Revised: 01/10/2024] [Accepted: 01/10/2024] [Indexed: 02/02/2024]
Abstract
The layer stacking order in two-dimensional heterostructures, like graphene, affects their physical properties and potential applications. Trilayer graphene, specifically ABC-trilayer graphene, has captured significant interest due to its potential for correlated electronic states. However, achieving a stable ABC arrangement is challenging due to its lower thermodynamic stability compared to the more stable ABA stacking. Despite recent advancements in obtaining ABC graphene through external perturbations, such as strain, the stacking transition mechanism remains insufficiently explored. In this study, we unveil a universal mechanism to achieve ABC stacking, applicable for understanding ABA to ABC stacking changes induced by any mechanical perturbations. Our approach is based on a novel strain engineering technique that induces interlayer slippage and results in the formation of stable ABC domains. We investigate the underlying interfacial mechanisms of this stacking change through computational simulations and experiments. Our findings demonstrate a highly anisotropic and significant transformation of ABA stacking to large and stable ABC domains facilitated by interlayer slippage. Through atomistic simulations and local energy analysis, we systematically demonstrate the mechanism for this stacking transition, that is dependent on specific loading orientation. Understanding such a mechanism allows this material system to be engineered by design compatible with industrial techniques on a device-by-device level. We conduct Raman studies to validate and characterize the formed ABC stacking, highlighting its distinct features compared to the ABA region. Our results contribute to a clearer understanding of the stacking change mechanism and provide a robust and controllable method for achieving stable ABC domains, facilitating their use in developing advanced optoelectronic devices.
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Affiliation(s)
- Aditya Dey
- Department
of Mechanical Engineering, University of
Rochester, New York 14627, United States
| | - Ahmad Azizimanesh
- Department
of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627-0001, United States
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627-0001, United States
| | - Hesam Askari
- Department
of Mechanical Engineering, University of
Rochester, New York 14627, United States
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4
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Ranjeesh KC, Rezk A, Martinez JI, Gaber S, Merhi A, Skorjanc T, Finšgar M, Luckachan GE, Trabolsi A, Kaafarani BR, Nayfeh A, Shetty D. A Rational Design of Isoindigo-Based Conjugated Microporous n-Type Semiconductors for High Electron Mobility and Conductivity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303562. [PMID: 37590383 PMCID: PMC10582460 DOI: 10.1002/advs.202303562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 08/04/2023] [Indexed: 08/19/2023]
Abstract
The development of n-type organic semiconductors has evolved significantly slower in comparison to that of p-type organic semiconductors mainly due to the lack of electron-deficient building blocks with stability and processability. However, to realize a variety of organic optoelectronic devices, high-performance n-type polymer semiconductors are essential. Herein, conjugated microporous polymers (CMPs) comprising isoindigo acceptor units linked to benzene or pyrene donor units (BI and PI) showing n-type semiconducting behavior are reported. In addition, considering the challenges of deposition of a continuous and homogeneous thin film of CMPs for accurate Hall measurements, a plasma-assisted fabrication technique is developed to yield uniform thin films. The fully conjugated 2D networks in PI- and BI-CMP films display high electron mobility of 6.6 and 3.5 cm2 V-1 s-1 , respectively. The higher carrier concentration in PI results in high conductivity (5.3 mS cm-1 ). Both experimental and computational studies are adequately combined to investigate structure-property relations for this intriguing class of materials in the context of organic electronics.
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Affiliation(s)
| | - Ayman Rezk
- Department of Electrical Engineering and Computer ScienceKhalifa UniversityAbu DhabiP.O. Box 127788UAE
| | - Jose Ignacio Martinez
- Department of Low‐Dimensional SystemsInstituto de Ciencia de Materiales de Madrid‐CSICC/ Sor Juana Inés de la Cruz 3Madrid28049Spain
| | - Safa Gaber
- Department of ChemistryKhalifa UniversityAbu DhabiP.O. Box 127788UAE
| | - Areej Merhi
- Department of ChemistryAmerican University of BeirutBeirut1107‐2020Lebanon
| | - Tina Skorjanc
- Materials Research LaboratoryUniversity of Nova GoricaVipavska cesta 11cAjdovscina5270Slovenia
| | - Matjaž Finšgar
- Faculty of Chemistry and Chemical EngineeringUniversity of MariborSmetanova ulica 17Maribor2000Slovenia
| | | | - Ali Trabolsi
- Science DivisionNew York University Abu DhabiSaadiyat IslandAbu DhabiP.O. Box 129188UAE
- NYUAD Water Research CenterNew York University Abu Dhabi (NYUAD)Saadiyat IslandAbu DhabiP.O. Box 129188UAE
| | - Bilal R. Kaafarani
- Department of ChemistryAmerican University of BeirutBeirut1107‐2020Lebanon
| | - Ammar Nayfeh
- Department of Electrical Engineering and Computer ScienceKhalifa UniversityAbu DhabiP.O. Box 127788UAE
| | - Dinesh Shetty
- Department of ChemistryKhalifa UniversityAbu DhabiP.O. Box 127788UAE
- Advanced Materials Chemistry Center (AMCC)Khalifa UniversityAbu DhabiP.O. Box 127788UAE
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Akhtar F, Dabrowski J, Lukose R, Wenger C, Lukosius M. Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001). ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37479219 PMCID: PMC10401564 DOI: 10.1021/acsami.3c05860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2023]
Abstract
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm-1) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.06), and homogeneous SEM images and is confirmed by Hall measurements: high mobility (2700 cm2/Vs) and low sheet resistance (800 Ω/sq). In contrast to Ge(001), Ge(110) does not undergo faceting during the growth. We argue that Ge(001) roughens as a result of vacancy accumulation at pinned steps, easy motion of bonded graphene edges across (107) facets, and low energy cost to expand Ge area by surface vicinals, but on Ge(110), these mechanisms do not work due to different surface geometries and complex reconstruction.
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Affiliation(s)
- Fatima Akhtar
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Jaroslaw Dabrowski
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Rasuole Lukose
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Christian Wenger
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- BTU Cottbus Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
| | - Mindaugas Lukosius
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
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6
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Kahro T, Raudonen K, Merisalu J, Tarre A, Ritslaid P, Kasikov A, Jõgiaas T, Käämbre T, Otsus M, Kozlova J, Alles H, Tamm A, Kukli K. Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1323. [PMID: 37110908 PMCID: PMC10146930 DOI: 10.3390/nano13081323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/16/2023] [Revised: 03/31/2023] [Accepted: 04/06/2023] [Indexed: 06/19/2023]
Abstract
SiO2 films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO2 films. On the top of the graphene layer, either continuous HfO2 or SiO2 films were grown by plasma-assisted atomic layer deposition or by electron beam evaporation, respectively. Micro-Raman spectroscopy confirmed the integrity of the graphene after the deposition processes of both the HfO2 and SiO2. Stacked nanostructures with graphene layers intermediating the SiO2 and either the SiO2 or HfO2 insulator layers were devised as the resistive switching media between the top Ti and bottom TiN electrodes. The behavior of the devices was studied comparatively with and without graphene interlayers. The switching processes were attained in the devices supplied with graphene interlayers, whereas in the media consisting of the SiO2-HfO2 double layers only, the switching effect was not observed. In addition, the endurance characteristics were improved after the insertion of graphene between the wide band gap dielectric layers. Pre-annealing the Si/TiN/SiO2 substrates before transferring the graphene further improved the performance.
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Goh SCK, Wu W, Siah CF, Phee DKY, Liu A, Tay BK. Surface disinfection with silver loaded pencil graphite prepared with green UV photoreduction technique. NANOTECHNOLOGY 2022; 33:235602. [PMID: 35158341 DOI: 10.1088/1361-6528/ac54dd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Carbon-based materials have been studied for their antimicrobial properties. Previously, most antimicrobial studies are investigated with suspended nanoparticles in a liquid medium. Most works are often carried out with highly ordered pyrolytic graphite. These materials are expensive and are not viable for mass use on high-touch surfaces. Additionally, highly antimicrobial silver nanoparticles are often incorporated onto substrates by chemical reduction. At times, harmful chemicals are used. In this work, low-cost graphite pencils are mechanically exfoliated and transferred onto Si substrates. The sparsely-covered graphite flakes are treated by either plasma O2or UV irradiation. Subsequently, Ag is photo reduced in the presence of UV onto selected graphite flake samples. It is found that graphite flake surface topography and defects are dependent on the treatment process. High surface roughness and (defects density,ID/IG) are induced by plasma O2follows by UV and pristine graphite flake as follows: 6.45 nm (0.62), 4.96 nm (0.5), 3.79 nm (0.47). Antimicrobial tests withE. colireveal high killing efficiency by photoreduced Ag-on-graphite flake. The reversible effect of Ag leaching can be compensated by repeating the photoreduction process. This work proposes that UV treatment is a promising technique over that of plasma O2in view that the latter treated surface could repel bacteria resulting in lower bacteria-killing efficiency.
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Affiliation(s)
- Simon Chun Kiat Goh
- CINTRA, Nanyang Technological University, 639798, Singapore
- School of Electrical and Electronic, Nanyang Technological University, 639798, Singapore
| | - Wenshuai Wu
- School of Electrical and Electronic, Nanyang Technological University, 639798, Singapore
| | - Chun Fei Siah
- School of Electrical and Electronic, Nanyang Technological University, 639798, Singapore
| | - Derek Keng Yang Phee
- School of Electrical and Electronic, Nanyang Technological University, 639798, Singapore
| | - Aiqun Liu
- School of Electrical and Electronic, Nanyang Technological University, 639798, Singapore
| | - Beng Kang Tay
- CINTRA, Nanyang Technological University, 639798, Singapore
- School of Electrical and Electronic, Nanyang Technological University, 639798, Singapore
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Gao Y, Chen J, Chen G, Fan C, Liu X. Recent Progress in the Transfer of Graphene Films and Nanostructures. SMALL METHODS 2021; 5:e2100771. [PMID: 34928026 DOI: 10.1002/smtd.202100771] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Revised: 10/13/2021] [Indexed: 06/14/2023]
Abstract
The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.
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Affiliation(s)
- Yanjing Gao
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jielin Chen
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Guorui Chen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Chunhai Fan
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaoguo Liu
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
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