Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2

Valence-state mixing and reduced magnetic moment inFe3-δGeTe2single crystals with varying Fe content probed by x-ray spectroscopy

We present a spectroscopic study of the magnetic properties ofFe3-δGeTe2single crystals with varying Fe content, achieved by tuning the stoichiometry of the crystals. We carried out x-ray absorption spectroscopy and analyzed the x-ray circular magnetic dichroism spectra using the sum rules, to determine the orbital and spin magnetic moments of the materials. We find a clear reduction of the spin and orbital magnetic moment with increasing Fe deficiency. Magnetic susceptibility measurements show that the reduction in magnetization is accompanied by a reduced Curie temperature. Multiplet calculations reveal that the Fe2+state increasingly mixes with a higher valence state when the Fe deficiency is increased. This effect is correlated with the weakening of the magnetic moment. As single crystals are the base material for exfoliation processes, our results are relevant for the assembly of 2D magnetic heterostructures.

Magnetic properties of ferromagnetic nanoparticles of FexGeTe2(x= 3, 5) directly exfoliated and dispersed in pure water

FexGeTe2(x= 3, 5) are two-dimensional ferromagnetic (FM) materials that have gained significant attention from researchers due to their relatively high Curie temperature and tunability. However, the methods for preparing FM nanoparticles (FNPs) and large-area FexGeTe2films are still in the early stages. Here, we studied the magnetic properties of FexGeTe2FNPs exfoliated via wet exfoliation in pure water. The coercive field of Fe3GeTe2FNPs increases significantly, up to 60 times, while that of Fe5GeTe2only slightly increases from that of bulk crystals. Further investigation related to the dimension of nanoparticles and the Henkel plot analysis reveals that the variation in their coercive field stems from the material's thickness-dependent coercive field and the type of term that governs the interaction between single-domain nanoparticles. Our work demonstrates a facile method for preparing FNPs using van der Waals FM materials and tuning their magnetic properties.

Exchange Bias Modulated by Antiferromagnetic Spin-Flop Transition in 2D Van der Waals Heterostructures

Exchange bias is extensively studied and widely utilized in spintronic devices, such as spin valves and magnetic tunnel junctions. 2D van der Waals (vdW) magnets, with high-quality interfaces in heterostructures, provide an excellent platform for investigating the exchange bias effect. To date, intrinsic modulation of exchange bias, for instance, via precise manipulation of the magnetic phases of the antiferromagnetic layer, is yet to be fully reached, owing partly to the large exchange fields of traditional bulk antiferromagnets. Herein, motivated by the low-field spin-flop transition of a 2D antiferromagnet, CrPS4, exchange bias is explored by modulating the antiferromagnetic spin-flop phase transition in all-vdW magnetic heterostructures. The results demonstrate that undergoing the spin-flop transition during the field cooling process, the A-type antiferromagnetic ground state of CrPS4 turns into a canted antiferromagnetic one, therefore, it reduces the interfacial magnetic coupling and suppresses the exchange bias. Via conducting different cooling fields, one can select the exchange bias effect switching among the "ON", "depressed", and "OFF" states determined by the spin flop of CrPS4. This work provides an approach to intrinsically modulate the exchange bias in all-vdW heterostructures and paves new avenues to design and manipulate 2D spintronic devices.

Nonreciprocal Antisymmetric Magnetoresistance and Unconventional Hall Effect in a Two-Dimensional Ferromagnet

Two-dimensional (2D) ferromagnets with high Curie temperatures provide a rich platform for exploring the exotic phenomena of 2D magnetism and the potential of spintronic devices. As a prototypical 2D ferromagnet, Fe5-xGeTe2 has recently been reported to possess a high Curie temperature with Tc ∼ 310 K, making it a promising candidate for advancing 2D nanoelectromechanical systems. However, due to its intricate magnetic ground state and magnetic domains, a thorough study of the transport behavior related to its lattice and domain structures is still lacking. Here, we report a nonreciprocal antisymmetric magnetoresistance in Fe5-xGeTe2 nanoflakes observed under an external magnetic field between 85-120 K. Through a detailed examination of its temperature, field orientation, and sample thickness dependence, we trace its origin to an additional electric field induced by the domain structure. This differs from the previously reported antisymmetric magnetoresistance due to thickness inhomogeneity. Notably, at lower temperatures, we observed an unconventional Hall effect (UHE), which can be attributed to the Dzyaloshinskii-Moriya interaction (DMI) resulting from the non-coplanar magnetic moment structure. The pronounced influence of sample thickness on magneto-transport properties underscores the competition between magnetic anisotropy and DMI in Fe5-xGeTe2 flakes with varying thicknesses. Our findings provide a deeper understanding of the magneto-transport behavior of the exotic magnetic structure in 2D ferromagnetic materials, which may benefit future spintronic device applications.

Giant coercivity enhancement in a room-temperature van der Waals magnet through substitutional metal-doping

Fe_xGeTe₂ (x = 3, 4, and 5) systems, two-dimensional (2D) van der Waals (vdW) ferromagnetic (FM) metals with high Curie temperatures (T_C), have been intensively studied to realize all-2D spintronic devices. Recently, an intrinsic FM material Fe₃GaTe₂ with high T_C (350-380 K) has been reported. As substitutional doping changes the magnetic properties of vdW magnets, it can be a powerful means for engineering the properties of magnetic materials. Here, the coercive field (H_c) is substantially enhanced by substituting Ni for Fe in (Fe_1-xNi_x)₃GaTe₂ crystals. The introduction of a Ni dopant with x = 0.03 can enhance the value of H_c up to ∼200% while maintaining the FM state at room temperature. As the doping level increases, T_C decreases, whereas H_c increases up to 7 kOe at x = 0.12, which is the highest H_c reported so far. The FM characteristic is almost suppressed at x = 0.68 and a spin glass state appears. The enhancement of H_c resulting from Ni doping can be attributed to domain pinning induced by substitutional Ni atoms, as evidenced by the decrease in magnetic anisotropy energy in the crystals upon Ni doping. Our findings provide a highly effective way to control the H_c of the 2D vdW FM metal Fe₃GaTe₂ for the realization of Fe₃GaTe₂ based room-temperature operating spintronic devices.