High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Demonstration of a low power and high-speed graphene/silicon heterojunction near-infrared photodetector

The structure and process of the graphene/Si heterojunction near-infrared photodetector were optimized to enhance the operating speed limit. The introduction of a well-designed structure improved the rise time from 12.6 μs to 115 ns, albeit at the expense of the responsivity, which decreased from 1.25 A W-1 to 0.56 A W-1. Similarly, the falling time was improved from 38 μs to 288 ns with a sacrifice in responsivity from 1.25 A W-1 to 0.29 A W-1, achieved through the introduction of Ge-induced defect-recombination centers within the well. Through a judicious well design and the introduction of recombination defect centers, the minimum pulse width could be improved from 50.6 μs to 435 ns, facilitating 2 MHz operation. This represents more than 100 times increase compared to previously reported graphene and graphene/Si hybrid photodetectors.

One-Dimensional Crystal-Structure Te-Se Alloy for Flexible Shortwave Infrared Photodetector and Imaging

Flexible shortwave infrared detectors play a crucial role in wearable devices, bioimaging, automatic control, etc. Commercial shortwave infrared detectors face challenges in achieving flexibility due to the high fabrication temperature and rigid material properties. Herein, we develop a high-performance flexible Te0.7Se0.3 photodetector, resulting from the unique 1D crystal structure and small elastic modulus of Te-Se alloying. The flexible photodetector exhibits a broad-spectrum response ranging from 365 to 1650 nm, a fast response time of 6 μs, a broad linear dynamic range of 76 dB, and a specific detectivity of 4.8 × 1010 Jones at room temperature. The responsivity of the flexible detector remains at 93% of its initial value after bending with a small curvature of 3 mm. Based on the optimized flexible detector, we demonstrate its application in shortwave infrared imaging. These results showcase the great potential of Te0.7Se0.3 photodetectors for flexible electronics.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Shortwave Infrared Organic Photodiodes Realized by Polaron Engineering

A novel approach for developing shortwave IR (SWIR) organic photodiodes (OPDs) using doped polymers is presented. SWIR OPDs are challenging to produce because of the limitations in extending the absorption of conjugated molecules and the high dark currents of SWIR-absorbing materials. Herein, it is shown that the conversion of bound polarons to free polarons by light energy can be utilized as an SWIR photodetection mechanism. To maximize the bound-polaron density and bound-to-free polaron ratio of the doped polymer film, the doping process is engineered and dopant molecules are diffused into the crystalline domain of the polymer matrix and a direct correlation between the bound-to-free polaron ratio and device performance is confirmed. The optimized double-doped SWIR OPD exhibits a high external quantum efficiency of 77 100% and specific detectivity of 1.11 × 1011 Jones against SWIR. These findings demonstrate the application potential of polarons as alternatives for Frenkel excitons in SWIR OPDs.

Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses

Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection. Compared with organic materials, inorganic semiconductors are promising candidates for FPDs owing to their superior performance as well as optoelectronic properties. Herein, for the first time, we present the use of transfer-printing techniques to enable a cost-effective, nontoxic GeSn MIR resonant-cavity-enhanced FPDs (RCE-FPDs) with strain-amplified optical responses. A narrow bandgap nontoxic GeSn nanomembrane was employed as the active layer, which was grown on a silicon-on-insulator substrate and then transfer-printed onto a polyethylene terephthalate (PET) substrate, eliminating the unwanted defects and residual compressive strain, to yield the MIR RCE-FPDs. In addition, a vertical cavity was created for the GeSn active layer to enhance the optical responsivity. Under bending conditions, significant tensile strain up to 0.274% was introduced into the GeSn active layer to effectively modulate the band structure, extend the photodetection in the MIR region, and substantially enhance the optical responsivity to 0.292 A W^-1 at λ = 1770 nm, corresponding to an enhancement of 323% compared with the device under flat conditions. Moreover, theoretical simulations were performed to confirm the strain effect on the device performance. The results demonstrated high-performance, nontoxic MIR RCE-FPDs for applications in flexible photodetection.

Opto-electrical and polarization performance of a mesa-structured InGaAs PIN detector integrated with subwavelength aluminum gratings

Polarization detection in the short-wave infrared (SWIR) region presents broad applications in target-background contrast enhancement, underwater imaging, material classification, etc. A mesa structure can prevent electrical cross talk due to its intrinsic advantages, making it potentially suited to meet the need for manufacturing smaller-sized devices to save cost and shrink volume. In this Letter, mesa-structured InGaAs PIN detectors with a spectral response ranging from 900 nm to 1700 nm and a detectivity of 6.28 × 10¹¹cm·Hz^1/2/W at 1550 nm and -0.1 V bias (room temperature) have been demonstrated. Furthermore, the devices with subwavelength gratings in four orientations show obvious polarization performance. Their extinction ratios (ERs) can reach 18:1 at 1550 nm and their transmittances are over 90%. Such a polarized device with a mesa structure could realize miniaturized SWIR polarization detection.