Physicochemical insight into gap openings in graphene

Porous Nanographenes, Graphene Nanoribbons, and Nanoporous Graphene Selectively Synthesized from the Same Molecular Precursor

We demonstrate a family of molecular precursors based on 7,10-dibromo-triphenylenes that can selectively produce different varieties of atomically precise porous graphene nanomaterials through the use of different synthetic environments. Upon Yamamoto polymerization of these molecules in solution, the free rotations of the triphenylene units around the C-C bonds result in the formation of cyclotrimers in high yields. In contrast, in on-surface polymerization of the same molecules on Au(111) these rotations are impeded, and the coupling proceeds toward the formation of long polymer chains. These chains can then be converted to porous graphene nanoribbons (pGNRs) by annealing. Correspondingly, the solution-synthesized cyclotrimers can also be deposited onto Au(111) and converted into porous nanographenes (pNGs) via thermal treatment. Thus, both processes start with the same molecular precursor and end with a porous graphene nanomaterial on Au(111), but the type of product, pNG or pGNR, depends on the specific coupling approach. We also produced extended nanoporous graphenes (NPGs) through the lateral fusion of highly aligned pGNRs on Au(111) that were grown at high coverage. The pNGs can also be synthesized directly in solution by Scholl oxidative cyclodehydrogenation of cyclotrimers. We demonstrate the generality of this approach by synthesizing two varieties of 7,10-dibromo-triphenylenes that selectively produced six nanoporous products with different dimensionalities. The basic 7,10-dibromo-triphenylene monomer is amenable to structural modifications, potentially providing access to many new porous graphene nanomaterials. We show that by constructing different porous structures from the same building blocks, it is possible to tune the energy band gap in a wide range.

Tunable band gaps and high carrier mobilities in stanene by small organic molecule adsorption under external electric fields

The effects of small organic molecule (SOM) adsorption with benzene (C6H6), hexafluorobenzene (C6F6), and p-difluorobenzene (C6H4F2) on the electronic properties of stanene under external electric fields are investigated through first-principles calculations. Different adsorption sites and molecular orientations are considered to determine the most stable configurations of small organic molecule (SOM) adsorption on the surface of stanene. The results show that the internal electric field caused by the adsorption of small organic molecules destroys the symmetry of the two sublattices of stanene in C6H6/stanene, C6F6/stanene and C6H4F2/stanene systems with the most stable configurations, opening the band gaps of stanene with 39.5, 18.9 and 14.5 meV, respectively. Under an external electric field, a wide range of linearly tunable and sizable direct band gaps (31.6-420.1 meV for the C6H6/stanene system, 14.8-587.2 meV for the C6F6/stanene system and 14.5-490.2 meV for the C6H4F2/stanene system) are merely determined by the strength of the composite electric field despite its direction. The mechanism of charge transfer between stanene and organic molecules under an external electric field can be revealed using an equivalent capacitor model to explain the tunable charge transfer. More importantly, the high carrier mobility of the stable SOM/stanene systems under an external electric field is largely retained due to the weak interactions at the interface. These results indicate that the electronic properties of stanene can be effectively modulated by the surface adsorption of organic molecules under an external electric field, providing effective and reversible routes to enhance the performance of stanene for novel electronic devices in the future.

Influence of water on the surface of graphene

We have studied how water modifies the surface of graphene and in particular how the surface conductivity of graphene is affected. According to the literature, two types of interactions should be distinguished: physical, where a water molecule remains intact and is located at some distance from the mesh, and chemical, where a water molecule is imbricated in the graphene bond structure. We have developed theoretical models for both types of interactions using the density functional theory (DFT) with the B3LYP hybrid functional combined with the 6-31G(d) basis set. Our calculations show that the surface conductivity of graphene is reduced in the presence of water.

Nitrogen doped graphite felt decorated with porous Ni1.4Co1.6S4 nanosheets for 3D pseudocapacitor electrodes

High performance 3D pseudocapacitor electrodes consisting of a nitrogen doped graphite felt (NGF) substrate and porous Ni_1.4Co_1.6S₄ nanosheets has been successfully prepared via a facile hydrothermal reaction.

Origin of multiple band gap values in single width nanoribbons

Deterministic band gap in quasi-one-dimensional nanoribbons is prerequisite for their integrated functionalities in high performance molecular-electronics based devices. However, multiple band gaps commonly observed in graphene nanoribbons of the same width, fabricated in same slot of experiments, remain unresolved, and raise a critical concern over scalable production of pristine and/or hetero-structure nanoribbons with deterministic properties and functionalities for plethora of applications. Here, we show that a modification in the depth of potential wells in the periodic direction of a supercell on relative shifting of passivating atoms at the edges is the origin of multiple band gap values in nanoribbons of the same width in a crystallographic orientation, although they carry practically the same ground state energy. The results are similar when calculations are extended from planar graphene to buckled silicene nanoribbons. Thus, the findings facilitate tuning of the electronic properties of quasi-one-dimensional materials such as bio-molecular chains, organic and inorganic nanoribbons by performing edge engineering.

A high performance, visible to mid-infrared photodetector based on graphene nanoribbons passivated with HfO2

Graphene has drawn tremendous attention as a promising candidate for electronic and optoelectronic applications owing to its extraordinary properties, such as broadband absorption and ultrahigh mobility. Nevertheless, the absence of a bandgap makes graphene unfavorable for digital electronic or photonic applications. Although patterning graphene into nanostructures with the quantum confinement effect is able to open a bandgap, devices based on these graphene nanostructures generally suffer from low carrier mobility and scattering losses. In this paper, we demonstrated that encapsulation of an atomic layer deposited high-quality HfO2 film will greatly enhance the carrier mobility and decrease the scattering losses of graphene nanoribbons, because this high-k dielectric layer weakens carrier coulombic interactions. In addition, a photodetector based on HfO2 layer capped graphene nanoribbons can cover broadband wavelengths from visible to mid-infrared at room temperature, exhibiting ∼10 times higher responsivity than the one without a HfO2 layer in the visible regime and ∼8 times higher responsivity in the mid-infrared regime. The method employed here could be potentially used as a general approach to improve the performance of graphene nanostructures for electronic and optoelectronic applications.

Dirac cone move and bandgap on/off switching of graphene superlattice

Using the density functional theory with generalized gradient approximation, we have studied in detail the cooperative effects of degenerate perturbation and uniaxial strain on bandgap opening in graphene. The uniaxial strain could split π bands into π_a and π_z bands with an energy interval E_s to move the Dirac cone. The inversion symmetry preserved antidot would then further split the π_a (π_z) bands into π_a1 (π_z1) and π_a2 (π_z2) bands with an energy interval E_d, which accounts for the bandgap opening in a kind of superlattices with Dirac cone being folded to Γ point. However, such antidot would not affect the semimetal nature of the other superlattices, showing a novel mechanism for bandstructure engineering as compared to the sublattice-equivalence breaking. For a superlattice with bandgap of ~E_d opened at Γ point, the E_s could be increased by strengthening strain to close the bandgap, suggesting a reversible switch between the high velocity properties of massless Fermions attributed to the linear dispersion relation around Dirac cone and the high on/off ratio properties associated with the sizable bandgap. Moreover, the gap width actually could be continuously tuned by controlling the strain, showing attractive application potentials.

Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 10¹⁰ Jones (cm Hz^1/2 W⁻¹) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.

Tuning the electronic and magnetic properties of graphene-like AlN nanosheets by surface functionalization and thickness

Semiconductor → half-metal → metal transition with nonmagnetic → magnetic transfer can be achieved for AlN nanosheets by surface hydrogenation and increasing nanosheet thickness.

Tuning the structures and electron transport properties of ultrathin Cu nanowires by size and bending stress using DFT and DFTB methods

Electron transport properties of ultrathin Cu nanowires with diameters of 0.2–1.0 nm under different bending stresses are reported, using density functional theory and density-functional-based tight-binding approaches, for application in flexible displays and solar cells.

Tuning electronic and magnetic properties of GaN nanosheets by surface modifications and nanosheet thickness

(a and b) Atomic and band structures of 2-F-GaN NS, and (c) electronic and magnetic properties of different GaN NSs.

Tunable electronic and magnetic properties of monolayer MoS2 on decorated AlN nanosheets: a van der Waals density functional study

The structural, electronic, and magnetic properties of monolayer MoS₂ on decorated AlN nanosheets have been systematically investigated using density functional theory with van der Waals corrections.

Reversible hydrophobic to hydrophilic transition in graphene via water splitting induced by UV irradiation

Although the reversible wettability transition between hydrophobic and hydrophilic graphene under ultraviolet (UV) irradiation has been observed, the mechanism for this phenomenon remains unclear. In this work, experimental and theoretical investigations demonstrate that the H2O molecules are split into hydrogen and hydroxyl radicals, which are then captured by the graphene surface through chemical binding in an ambient environment under UV irradiation. The dissociative adsorption of H2O molecules induces the wettability transition in graphene from hydrophobic to hydrophilic. Our discovery may hold promise for the potential application of graphene in water splitting.

Tuning electronic and magnetic properties of partially hydrogenated graphene by biaxial tensile strain: a computational study

Using density functional theory calculations, we have investigated the effects of biaxial tensile strain on the electronic and magnetic properties of partially hydrogenated graphene (PHG) structures. Our study demonstrates that PHG configuration with hexagon vacancies is more energetically favorable than several other types of PHG configurations. In addition, an appropriate biaxial tensile strain can effectively tune the band gap and magnetism of the hydrogenated graphene. The band gap and magnetism of such configurations can be continuously increased when the magnitude of the biaxial tensile strain is increased. This fact that both the band gap and magnetism of partially hydrogenated graphene can be tuned by applying biaxial tensile strain provides a new pathway for the applications of graphene to electronics and photonics.

Anomalous interface adhesion of graphene membranes

In order to understand the anomalous interface adhesion properties between graphene membranes and their substrates, we have developed a theoretical method to calibrate the interface adhesion energy of monolayer and multilayer graphene on substrates based on the bond relaxation consideration. Four kinds of interfaces, including graphene/SiO₂, graphene/Cu, graphene/Cu/Ni and Cu/graphene/Ni, were taken into account. It was found that the membrane thickness and the interface confinement condition determine the adhesion energy. The relationship between the critical interface separation and the graphene thickness showed that the interface separation in the self-equilibrium state drops with decreasing membrane thickness. The size-dependent Young's modulus of graphene membrane and the interfacial condition were responsible for the novel interface adhesion energy. The proposed theory was expected to be applied to the design of graphene-based devices.

Tunable band gaps in silicene–MoS2heterobilayers

A sizable and tunable bandgap is realized in silicene–MoS₂heterobilayers.

Adjusting the electronic properties of silicon carbide nanoribbons by introducing edge functionalization

The electronic properties of silicon carbide nanoribbons can be adjusted by introducing edge functionalization.