Ageing dynamics of ion bombardment induced self-organization processes

de Gennes Narrowing and Relationship between Structure and Dynamics in Self-Organized Ion-Beam Nanopatterning

Investigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times in liquids are proportional to the scattering structure factor. Here, a similar relationship is discovered during the self-organized ion-beam nanopatterning of silicon using coherent x-ray scattering. However, in contrast to the exponential relaxation of fluctuations in classic de Gennes narrowing, the dynamic surface exhibits a wide range of behaviors as a function of the length scale, with a compressed exponential relaxation at lengths corresponding to the dominant structural motif-self-organized nanoscale ripples. These behaviors are reproduced in simulations of a nonlinear model describing the surface evolution. We suggest that the compressed exponential behavior observed here is due to the morphological persistence of the self-organized surface ripple patterns which form and evolve during ion-beam nanopatterning.

X-Ray Photon Correlation Spectroscopy with Coherent Nanobeams: A Numerical Study

X-ray photon correlation spectroscopy accesses a wide variety of dynamic phenomena at the nanoscale by studying the temporal correlations among photons that are scattered by a material in dynamical equilibrium when it is illuminated with a coherent X-ray beam. The information that is obtained is averaged over the illuminated area, which is generally of the order of several square microns. We propose here that more local information can be obtained by using nanobeams with great potential for the study of heterogeneous systems and show the feasibility of this approach with the support of numerical simulations.

Simulations of Co-GISAXS during kinetic roughening of growth surfaces

The recent development of surface growth studies using X-ray photon correlation spectroscopy in a grazing-incidence small-angle X-ray scattering (Co-GISAXS) geometry enables the investigation of dynamical processes during kinetic roughening in greater detail than was previously possible. In order to investigate the Co-GISAXS behavior expected from existing growth models, calculations and (2+1)-dimension simulations of linear Kuramoto-Sivashinsky and non-linear Kardar-Parisi-Zhang surface growth equations are presented which analyze the temporal correlation functions of the height-height structure factor. Calculations of the GISAXS intensity auto-correlation functions are also performed within the Born/distorted-wave Born approximation for comparison with the scaling behavior of the height-height structure factor and its correlation functions.

On the use of two-time correlation functions for X-ray photon correlation spectroscopy data analysis

Multi-time correlation functions are especially well suited to study non-equilibrium processes. In particular, two-time correlation functions are widely used in X-ray photon correlation experiments on systems out of equilibrium. One-time correlations are often extracted from two-time correlation functions at different sample ages. However, this way of analysing two-time correlation functions is not unique. Here, two methods to analyse two-time correlation functions are scrutinized, and three illustrative examples are used to discuss the implications for the evaluation of the correlation times and functional shape of the correlations.

Silicide induced ion beam patterning of Si(001)

Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.