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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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Menon H, Jeddi H, Morgan NP, Fontcuberta I Morral A, Pettersson H, Borg M. Monolithic InSb nanostructure photodetectors on Si using rapid melt growth. NANOSCALE ADVANCES 2023; 5:1152-1162. [PMID: 36798495 PMCID: PMC9926903 DOI: 10.1039/d2na00903j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Accepted: 01/18/2023] [Indexed: 06/18/2023]
Abstract
Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W-1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K.
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Affiliation(s)
- Heera Menon
- Electrical and Information Technology, Lund University Lund Sweden
- NanoLund, Lund University Box 118 Lund SE-221 00 Sweden
| | - Hossein Jeddi
- NanoLund, Lund University Box 118 Lund SE-221 00 Sweden
- School of Information Technology, Halmstad University Box 823 Halmstad SE-301 18 Sweden
- Solid State Physics, Lund University Box 118 Lund SE-221 00 Sweden
| | - Nicholas Paul Morgan
- Laboratory of Semiconductor Materials, Ecole Polytechnique Federale de Lausanne Lausanne Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Ecole Polytechnique Federale de Lausanne Lausanne Switzerland
| | - Håkan Pettersson
- NanoLund, Lund University Box 118 Lund SE-221 00 Sweden
- School of Information Technology, Halmstad University Box 823 Halmstad SE-301 18 Sweden
- Solid State Physics, Lund University Box 118 Lund SE-221 00 Sweden
| | - Mattias Borg
- Electrical and Information Technology, Lund University Lund Sweden
- NanoLund, Lund University Box 118 Lund SE-221 00 Sweden
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Meduňa M, Isa F, Bressan F, von Känel H. The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals. J Appl Crystallogr 2022; 55:823-836. [PMID: 35974728 PMCID: PMC9348889 DOI: 10.1107/s1600576722004885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Accepted: 05/06/2022] [Indexed: 11/10/2022] Open
Abstract
This work presents a new approach suitable for mapping reciprocal space in three dimensions with standard laboratory equipment and a typical X-ray diffraction setup. The method is based on symmetric and coplanar high-resolution X-ray diffraction, ideally realized using 2D X-ray pixel detectors. The processing of experimental data exploits the Radon transform commonly used in medical and materials science. It is shown that this technique can also be used for diffraction mapping in reciprocal space even if a highly collimated beam is not available. The application of the method is demonstrated for various types of epitaxial microcrystals on Si substrates. These comprise partially fused SiGe microcrystals that are tens of micrometres high, multiple-quantum-well structures grown on SiGe microcrystals and pyramid-shaped GaAs/Ge microcrystals on top of Si micropillars.
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Affiliation(s)
- Mojmír Meduňa
- Department of Condensed Matter Physics, Masaryk University, Kotlářská 2, CZ-61137 Brno, Czech Republic
| | - Fabio Isa
- Laboratory for Solid State Physics, ETH Zurich, Otto-Stern Weg 1, CH-8093 Zurich, Switzerland
| | - Franco Bressan
- G-ray Switzerland SA, Rouges-Terres 61, CH-2068 Hauterive, Switzerland
| | - Hans von Känel
- Laboratory for Solid State Physics, ETH Zurich, Otto-Stern Weg 1, CH-8093 Zurich, Switzerland
- G-ray Switzerland SA, Rouges-Terres 61, CH-2068 Hauterive, Switzerland
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Meduňa M, Caha O, Choumas E, Bressan F, von Känel H. X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si. J Appl Crystallogr 2021. [DOI: 10.1107/s1600576721004969] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/22/2023] Open
Abstract
This work investigates layers of densely spaced SiGe microcrystals epitaxially formed on patterned Si and grown up to extreme heights of 40 and 100 µm using the rocking curve imaging technique with standard laboratory equipment and a 2D X-ray pixel detector. As the crystalline tilt varied both within the epitaxial SiGe layers and inside the individual microcrystals, it was possible to obtain real-space 2D maps of the local lattice bending and distortion across the complete SiGe surface. These X-ray maps, showing the variation of crystalline quality along the sample surface, were compared with optical and scanning electron microscopy images. Knowing the distribution of the X-ray diffraction peak intensity, peak position and peak width immediately yields the crystal lattice bending locally present in the samples as a result of the thermal processes arising during the growth. The results found here by a macroscopic-scale imaging technique reveal that the array of large microcrystals, which tend to fuse at a certain height, forms domains limited by cracks during cooling after the growth. The domains are characterized by uniform lattice bending and their boundaries are observed as higher distortion of the crystal structure. The effect of concave thermal lattice bending inside the microcrystal array is in excellent agreement with the results previously presented on a microscopic scale using scanning nanodiffraction.
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Barzaghi A, Firoozabadi S, Salvalaglio M, Bergamaschini R, Ballabio A, Beyer A, Albani M, Valente J, Voigt A, Paul DJ, Miglio L, Montalenti F, Volz K, Isella G. Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates. CRYSTAL GROWTH & DESIGN 2020; 20:2914-2920. [PMID: 33828439 PMCID: PMC8016367 DOI: 10.1021/acs.cgd.9b01312] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2019] [Revised: 04/08/2020] [Indexed: 06/11/2023]
Abstract
We present an experimental and theoretical analysis of the formation of nanovoids within Si microcrystals epitaxially grown on Si patterned substrates. The growth conditions leading to the nucleation of nanovoids have been highlighted, and the roles played by the deposition rate, substrate temperature, and substrate pattern geometry are identified. By combining various scanning and transmission electron microscopy techniques, it has been possible to link the appearance pits of a few hundred nanometer width at the microcrystal surface with the formation of nanovoids within the crystal volume. A phase-field model, including surface diffusion and the flux of incoming material with shadowing effects, reproduces the qualitative features of the nanovoid formation thereby opening new perspectives for the bottom-up fabrication of 3D semiconductors microstructures.
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Affiliation(s)
- Andrea Barzaghi
- L-NESS,
Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, 22100 Como, Italy
| | - Saleh Firoozabadi
- Materials
Science Center and Faculty of Physics, Philipps-Universität
Marburg, Hans-Meerweinstraße 6, 35032 Marburg, Germany
| | - Marco Salvalaglio
- Institute
of Scientific Computing, Technische Universität
Dresden, 01062 Dresden, Germany
- Dresden
Center for Computational Materials Science, Technische Universität Dresden, 01062 Dresden, Germany
| | - Roberto Bergamaschini
- L-NESS
and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
| | - Andrea Ballabio
- L-NESS,
Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, 22100 Como, Italy
| | - Andreas Beyer
- Materials
Science Center and Faculty of Physics, Philipps-Universität
Marburg, Hans-Meerweinstraße 6, 35032 Marburg, Germany
| | - Marco Albani
- L-NESS
and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
| | - Joao Valente
- James Watt
School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom
| | - Axel Voigt
- Institute
of Scientific Computing, Technische Universität
Dresden, 01062 Dresden, Germany
- Dresden
Center for Computational Materials Science, Technische Universität Dresden, 01062 Dresden, Germany
| | - Douglas J. Paul
- James Watt
School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom
| | - Leo Miglio
- L-NESS
and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
| | - Francesco Montalenti
- L-NESS
and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
| | - Kerstin Volz
- Materials
Science Center and Faculty of Physics, Philipps-Universität
Marburg, Hans-Meerweinstraße 6, 35032 Marburg, Germany
| | - Giovanni Isella
- L-NESS,
Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, 22100 Como, Italy
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Meduňa M, Isa F, Jung A, Marzegalli A, Albani M, Isella G, Zweiacker K, Miglio L, von Känel H. Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals. J Appl Crystallogr 2018. [DOI: 10.1107/s1600576718001450] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Abstract
The scanning X-ray nanodiffraction technique is used to reconstruct the three-dimensional distribution of lattice strain and Ge concentration in compositionally graded Si1−xGexmicrocrystals grown epitaxially on Si pillars. The reconstructed crystal shape qualitatively agrees with scanning electron micrographs and the calculated three-dimensional distribution of lattice tilt quantitatively matches finite-element method simulations. The grading of the Ge content obtained from reciprocal-space maps corresponds to the nominal grading of the epitaxial growth recipe. The X-ray measurements confirm strain calculations, according to which the lattice curvature of the microcrystals is dominated by the misfit strain, while the thermal strain contributes negligibly. The nanodiffraction experiments also indicate that the strain in narrow microcrystals on 2 × 2 µm Si pillars is relaxed purely elastically, while in wider microcrystals on 5 × 5 µm Si pillars, plastic relaxation by means of dislocations sets in. This confirms previous work on these structures using transmission electron microscopy and defect etching.
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Skibitzki O, Capellini G, Yamamoto Y, Zaumseil P, Schubert MA, Schroeder T, Ballabio A, Bergamaschini R, Salvalaglio M, Miglio L, Montalenti F. Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars. ACS APPLIED MATERIALS & INTERFACES 2016; 8:26374-26380. [PMID: 27603117 DOI: 10.1021/acsami.6b07694] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.
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Affiliation(s)
| | - Giovanni Capellini
- IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- Department of Science, Università Roma Tre , Viale G. Marconi 446, Rome I-00146, Italy
| | - Yuji Yamamoto
- IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Peter Zaumseil
- IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | | | - Thomas Schroeder
- IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- Brandenburgische Technische Universität, Konrad-Zuse-Str. 1, Cottbus 03046, Germany
| | - Andrea Ballabio
- L-NESS and Department of Physics, Politecnico di Milano , Via Anzani 42, Como I-22100, Italy
| | - Roberto Bergamaschini
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via Cozzi 55, Milan I-20125, Italy
| | - Marco Salvalaglio
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via Cozzi 55, Milan I-20125, Italy
| | - Leo Miglio
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via Cozzi 55, Milan I-20125, Italy
| | - Francesco Montalenti
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via Cozzi 55, Milan I-20125, Italy
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Meduňa M, Falub CV, Isa F, Marzegalli A, Chrastina D, Isella G, Miglio L, Dommann A, von Känel H. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. J Appl Crystallogr 2016. [DOI: 10.1107/s1600576716006397] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Abstract
Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.
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10
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Salvalaglio M, Bergamaschini R, Isa F, Scaccabarozzi A, Isella G, Backofen R, Voigt A, Montalenti F, Capellini G, Schroeder T, von Känel H, Miglio L. Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si. ACS APPLIED MATERIALS & INTERFACES 2015; 7:19219-19225. [PMID: 26252761 DOI: 10.1021/acsami.5b05054] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The move from dimensional to functional scaling in microelectronics has led to renewed interest toward integration of Ge on Si. In this work, simulation-driven experiments leading to high-quality suspended Ge films on Si pillars are reported. Starting from an array of micrometric Ge crystals, the film is obtained by exploiting their temperature-driven coalescence across nanometric gaps. The merging process is simulated by means of a suitable surface-diffusion model within a phase-field approach. The successful comparison between experimental and simulated data demonstrates that the morphological evolution is driven purely by the lowering of surface-curvature gradients. This allows for fine control over the final morphology to be attained. At fixed annealing time and temperature, perfectly merged films are obtained from Ge crystals grown at low temperature (450 °C), whereas some void regions still persist for crystals grown at higher temperature (500 °C) due to their different initial morphology. The latter condition, however, looks very promising for possible applications. Indeed, scanning tunneling electron microscopy and high-resolution transmission electron microscopy analyses show that, at least during the first stages of merging, the developing film is free from threading dislocations. The present findings, thus, introduce a promising path to integrate Ge layers on Si with a low dislocation density.
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Affiliation(s)
- Marco Salvalaglio
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via R. Cozzi 55, I-20126, Milano, Italy
| | - Roberto Bergamaschini
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via R. Cozzi 55, I-20126, Milano, Italy
| | - Fabio Isa
- Laboratory for Solid State Physics, ETH Zürich , Otto-Stern-Weg 1, CH-8093, Zürich, Switzerland
| | - Andrea Scaccabarozzi
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via R. Cozzi 55, I-20126, Milano, Italy
| | - Giovanni Isella
- L-NESS and Department of Physics, Politecnico di Milano , Via F. Anzani 42, I-22100, Como, Italy
| | - Rainer Backofen
- Institut für Wissenschaftliches Rechnen, Technische Universität Dresden , Zellescher Weg 12-14, D-01069, Dresden, Germany
| | - Axel Voigt
- Institut für Wissenschaftliches Rechnen, Technische Universität Dresden , Zellescher Weg 12-14, D-01069, Dresden, Germany
| | - Francesco Montalenti
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via R. Cozzi 55, I-20126, Milano, Italy
| | - Giovanni Capellini
- IHP , Im Technologiepark 25, D-15236, Frankfurt (Oder), Germany
- Department of Science, Università Roma Tre , Viale Marconi 446, I-00146, Roma, Italy
| | | | - Hans von Känel
- Laboratory for Solid State Physics, ETH Zürich , Otto-Stern-Weg 1, CH-8093, Zürich, Switzerland
| | - Leo Miglio
- L-NESS and Department of Materials Science, Università di Milano-Bicocca , Via R. Cozzi 55, I-20126, Milano, Italy
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Meduňa M, Falub CV, Isa F, Chrastina D, Kreiliger T, Isella G, von Känel H. Reconstruction of crystal shapes by X-ray nanodiffraction from three-dimensional superlattices. J Appl Crystallogr 2014. [DOI: 10.1107/s1600576714023772] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Abstract
Quantitative nondestructive imaging of structural properties of semiconductor layer stacks at the nanoscale is essential for tailoring the device characteristics of many low-dimensional quantum structures, such as ultrafast transistors, solid state lasers and detectors. Here it is shown that scanning nanodiffraction of synchrotron X-ray radiation can unravel the three-dimensional structure of epitaxial crystals containing a periodic superlattice underneath their faceted surface. By mapping reciprocal space in all three dimensions, the superlattice period is determined across the various crystal facets and the very high crystalline quality of the structures is demonstrated. It is shown that the presence of the superlattice allows the reconstruction of the crystal shape without the need of any structural model.
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12
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Chahine GA, Richard MI, Homs-Regojo RA, Tran-Caliste TN, Carbone D, Jacques VLR, Grifone R, Boesecke P, Katzer J, Costina I, Djazouli H, Schroeder T, Schülli TU. Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping. J Appl Crystallogr 2014. [DOI: 10.1107/s1600576714004506] [Citation(s) in RCA: 85] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Abstract
Numerous imaging methods have been developed over recent years in order to study materials at the nanoscale. Within this context, scanning X-ray diffraction microscopy has become a routine technique, giving access to structural properties with sub-micrometre resolution. This article presents an optimized technique and an associated software package which have been implemented at the ID01 beamline (ESRF, Grenoble). A structural scanning probe microscope with intriguing imaging qualities is obtained. The technique consists in a two-dimensional quick continuous mapping with sub-micrometre resolution of a sample at a given reciprocal space position. These real space maps are made by continuously moving the sample while recording scattering images with a fast two-dimensional detector for every point along a rocking curve. Five-dimensional data sets are then produced, consisting of millions of detector images. The images are processed by the user-friendly X-ray strain orientation calculation software (XSOCS), which has been developed at ID01 for automatic analysis. It separates tilt and strain and generates two-dimensional maps of these parameters. At spatial resolutions of typically 200–800 nm, this quick imaging technique achieves strain sensitivity below Δa/a= 10−5and a resolution of tilt variations down to 10−3° over a field of view of 100 × 100 µm.
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