Atomic and electronic structure of an alloyed topological insulator, Bi1.5Sb0.5Te1.7Se1.3

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Studying the dielectric response of topological insulators (TIs) can unveil their unique physical mechanisms such as charge transport and spin-orbit coupling effects. However, due to the manifestation of material's topological nature and band structure primarily in nanofilm, such thickness poses challenges for dielectric testing. To date, research on TI dielectric aspects remains relatively unexplored. Therefore, this paper successfully synthesizes nanofilm of quaternary topological insulator Bi1·2Sb0·8Te0·4Se2.6 (BSTS) using laser molecular beam epitaxy (LMBE) technique. Utilizing a wide-frequency dielectric spectrometer and a comprehensive physical properties measurement system (PPMS), we measured and thoroughly analyzed the dielectric polarization and charge transport characteristics of BSTS. We observed various polarization responses in the frequency range of 101-103 Hz, with the dipole orientation gradually failing to keep pace with the frequency increase in the range of 103-105 Hz, and the relaxation polarization unable to establish itself in the range of 105-107 Hz, with polarization primarily contributed by displacement polarization. Subsequently, we further analyzed the dependence of BSTS dielectric polarization response on temperature and film thickness, which will help reveal the influence of external factors on TI dielectric response, providing crucial insights for controlling TI materials' dielectric response. This not only deepens our understanding of the fundamental physical properties of this novel material but also offers important scientific basis and technological support for its applications in quantum computing, photonics, spintronics, and other fields.

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6

This study successfully fabricated the quaternary topological insulator thin films of Bi1.2Sb0.8Te0.4Se2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the separation of transport characteristics between the bulk and surface of topological insulator materials by utilizing a comprehensive Physical Properties Measurement System (PPMS) and Terahertz Time-Domain Spectroscopy (THz-TDS) to extract electronic transport information for both bulk and surface states. Additionally, the dielectric polarization behavior of BSTS in the low-frequency (10-107 Hz) and high-frequency (0.5-2.0 THz) ranges was investigated. These research findings provide crucial experimental groundwork and theoretical guidance for the development of novel low-energy electronic devices, spintronic devices, and quantum computing technology based on topological insulators.

Emergent helical edge states in a hybridized three-dimensional topological insulator

As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped spectrum. Whether the surface hybridization gap can host topological edge states is still an open question. Herein, we provide transport evidence of 2D topological states in the quantum tunneling regime of a bulk insulating 3D TI BiSbTeSe₂. Different from its trivial insulating phase, this 2D topological state exhibits a finite longitudinal conductance at ~2e²/h when the Fermi level is aligned within the surface gap, indicating an emergent quantum spin Hall (QSH) state. The transition from the QSH to quantum Hall (QH) state in a transverse magnetic field further supports the existence of this distinguished 2D topological phase. In addition, we demonstrate a second route to realize the 2D topological state via surface gap-closing and topological phase transition mechanism mediated by a transverse electric field. The experimental realization of the 2D topological phase in a 3D TI enriches its phase diagram and marks an important step toward functionalized topological quantum devices.

Tip-induced superconductivity

It is widely believed that topological superconductivity, a hitherto elusive phase of quantum matter, can be achieved by inducing superconductivity in topological materials. In search of such topological superconductors, certain topological insulators (like, Bi₂Se₃) were successfully turned into superconductors by metal-ion (Cu, Pd, Sr, Nb etc) intercalation. Superconductivity could be induced in topological materials through applying pressure as well. For example, a pressure-induced superconducting phase was found in the topological insulator Bi₂Se₃. However, in all such cases, no conclusive signature of topological superconductivity was found. In this review, we will discuss about another novel way of inducing superconductivity in a non-superconducting topological material-by creating a mesoscopic interface on the material with a non-superconducting, normal metallic tip where the mesoscopic interface becomes superconducting. Such a phase is now known as a tip-induced superconducting (TISC) phase. This was first realized on Cd₃As₂in India. Following that, a large number of other topological materials were shown to display TISC. Since the TISC phase emerges only at a confined region under a mesoscopic point contact, traditional bulk tools for characterizing superconductivity cannot be employed to detect/confirm such a phase. On the other hand, such a point contact geometry is ideal for probing the possible existence of a temperature and magnetic field dependent superconducting energy gap and a temperature and magnetic field dependent critical current. We will review the details of the experimental signatures that can be used to prove the existence of superconductivity even when the 'text-book' tests for detecting superconductivity cannot be performed. Then, we will review various systems where a TISC phase could be realized.

Magnetic Gap of Fe-Doped BiSbTe2Se Bulk Single Crystals Detected by Tunneling Spectroscopy and Gate-Controlled Transports

Topological insulators with broken time-reversal symmetry and the Fermi level within the magnetic gap at the Dirac cone provides exotic topological magneto-electronic phenomena. Here, we introduce an improved magnetically doped topological insulator, Fe-doped BiSbTe₂Se (Fe-BSTS) bulk single crystal, with an ideal Fermi level. Scanning tunneling microscopy and spectroscopy (STM/STS) measurements revealed that the surface state possesses a Dirac cone with the Dirac point just below the Fermi level by 12 meV. The normalized dI/dV spectra suggest a gap opening with Δ_mag ∼55 meV, resulting in the Fermi level within the opened gap. Ionic-liquid gated-transport measurements also support the Dirac point just below the Fermi level and the presence of the magnetic gap. The chemical potential of the surface state can be fully tuned by ionic-liquid gating, and thus the Fe-doped BSTS provides an ideal platform to investigate exotic quantum topological phenomena.

Tip-induced superconductivity coexisting with preserved topological properties in line-nodal semimetal ZrSiS

ZrSiS was recently shown to be a new material with topologically non-trivial band structure that exhibits multiple Dirac nodes and a robust linear band dispersion up to an unusually high energy of 2 eV. Such a robust linear dispersion makes the topological properties of ZrSiS insensitive to perturbations like carrier doping or lattice distortion. Here, we show that a novel superconducting phase with a remarkably high [Formula: see text] of 7.5 K can be induced in single crystals of ZrSiS by a non-superconducting metallic tip of Ag. From first-principles calculations, we show that the observed superconducting phase might originate from a dramatic enhancement of density of states due to the presence of a metallic tip on ZrSiS. Our calculations also show that the emerging tip-induced superconducting phase co-exists with the well preserved topological properties of ZrSiS.

Prominent metallic surface conduction and the singular magnetic response of topological Dirac fermion in three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3

We report semiconductor to metal-like crossover in the temperature dependence of resistivity (ρ) due to the switching of charge transport from bulk to surface channel in three-dimensional topological insulator Bi_1.5Sb_0.5Te_1.7Se_1.3. Unlike earlier studies, a much sharper drop in ρ(T) is observed below the crossover temperature due to the dominant surface conduction. Remarkably, the resistivity of the conducting surface channel follows a rarely observable T ² dependence at low temperature, as predicted theoretically for a two-dimensional Fermi liquid system. The field dependence of magnetization shows a cusp-like paramagnetic peak in the susceptibility (χ) at zero field over the diamagnetic background. The peak is found to be robust against temperature and χ decays linearly with the field from its zero-field value. This unique behavior of the χ is associated with the spin-momentum locked topological surface state in Bi_1.5Sb_0.5Te_1.7Se_1.3. The reconstruction of the surface state with time is clearly reflected through the reduction of the peak height with the age of the sample.

Band Structure of Topological Insulator BiSbTe1.25Se1.75

We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe_1.25Se_1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in this compound. We find that the SSBs, which are are sensitive to the atomic composition of the terminating surface have a partial 3D character. Our detailed study of the band bending (BB) effects shows that in BSTS the Dirac point (DP) shifts by more than two times compared to that in Bi₂Se₃ to reach the saturation. The stronger BB in BSTS could be due to the difference in screening of the surface charges. From momentum density curves (MDCs) of the ARPES data we obtained an energy dispersion relation showing the warping strength of the Fermi surface in BSTS to be intermediate between those found in Bi₂Se₃ and Bi₂Te₃ and also to be tunable by controlling the ratio of chalcogen/pnictogen atoms. Our experiments also reveal that the nature of the BB effects are highly sensitive to the exposure of the fresh surface to various gas species. These findings have important implications in the tuning of DP in TIs for technological applications.

Bulk-Induced 1/f Noise at the Surface of Three-Dimensional Topological Insulators

Slow intrinsic fluctuations of resistance, also known as the flicker noise or 1/f-noise, in the surface transport of strong topological insulators (TIs) is a poorly understood phenomenon. Here, we have systematically explored the 1/f-noise in field-effect transistors (FET) of mechanically exfoliated Bi1.6Sb0.4Te2Se TI films when transport occurs predominantly via the surface states. We find that the slow kinetics of the charge disorder within the bulk of the TI induces mobility fluctuations at the surface, providing a new source of intrinsic 1/f-noise that is unique to bulk TI systems. At small channel thickness, the noise magnitude can be extremely small, corresponding to the phenomenological Hooge parameter γH as low as ≈10(-4), but it increases rapidly when channel thickness exceeds ∼1 μm. From the temperature (T)-dependence of noise, which displayed sharp peaks at characteristic values of T, we identified generation-recombination processes from interband transitions within the TI bulk as the dominant source of the mobility fluctuations in surface transport. Our experiment not only establishes an intrinsic microscopic origin of noise in TI surface channels, but also reveals a unique spectroscopic information on the impurity bands that can be useful in bulk TI systems in general.

Morphology and local conductance of single crystalline Bi2Te3 thin films on mica

The relation between surface morphology and local conductance was studied for single crystalline thin films of Bi2Te3 grown on mica. Atomic force microscopy and electron diffraction revealed the hexagonal order of the surface with quintuple layer steps and spiral islands. Furthermore, the experiments using contact mode AFM with conducting tip performed at room temperature revealed the high conductance of the surface, which was locally reduced due to changes in the local electronic structure at the defects (e.g. edges of the terraces). Contact current-voltage characteristics tested over the surface showed a linear behavior in every point, with the resistance significantly lower than the resistance of reference metallic samples (gold, platinum). We show that local conductivity AFM is a good technique to exploit the peculiar surface properties of topological insulators.

Substitution-induced spin-splitted surface states in topological insulator (Bi 1-x Sbx)2Te3

We present a study on surface states of topological insulator (Bi 1-x Sbx)2Te3 by imaging quasiparticle interference patterns (QPI) using low temperature scanning tunneling microscope. Besides the topological Dirac state, we observed another surface state with chiral spin texture within the conduction band range. The quasiparticle scattering in this state is selectively suppressed. Combined with first-principles calculations, we attribute this state to a spin-splitted band induced by the substitution of Bi with Sb atoms. Our results demonstrate that the coexistence of topological order and alloying may open wider tunability in quantum materials.

Robust protection from backscattering in the topological insulator Bi1.5Sb0.5Te1.7Se1.3

Electron scattering in the topological surface state (TSS) of the topological insulator Bi1.5Sb0.5Te1.7Se1.3 was studied using quasiparticle interference observed by scanning tunneling microscopy. It was found that not only the 180° backscattering but also a wide range of backscattering angles of 100°-180° are effectively prohibited in the TSS. This conclusion was obtained by comparing the observed scattering vectors with the diameters of the constant-energy contours of the TSS, which were measured for both occupied and unoccupied states using time- and angle-resolved photoemission spectroscopy. The robust protection from backscattering in the TSS is good news for applications, but it poses a challenge to the theoretical understanding of the transport in the TSS.