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Li Z, Chen Y, Song A, Zhang J, Zhang R, Zhang Z, Wang X. Anisotropic phonon dynamics in Dirac semimetal PtTe 2 thin films enabled by helicity-dependent ultrafast light excitation. LIGHT, SCIENCE & APPLICATIONS 2024; 13:181. [PMID: 39090099 PMCID: PMC11294612 DOI: 10.1038/s41377-024-01540-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2024] [Revised: 07/04/2024] [Accepted: 07/17/2024] [Indexed: 08/04/2024]
Abstract
Coherent phonons have aroused considerable attention in condensed matter physics owing to their extraordinary capacity of reflecting and controlling the physical properties of matter. However, the investigation on the interaction between coherent phonons and other microscopic particles on the ultrafast timescale within topological systems continues to be an active and unresolved area. Here, we show the energy transfer of coherent optical phonons (COP) in Dirac semimetal PtTe2 thin films using ultrafast optical pump-probe spectroscopy. Specifically, the helicity-dependent light-driven anisotropic COP signals disclose their direct connection with the light-excited anisotropic spin-polarized electrons via an angular momentum transfer. Furthermore, we observe the notable decreases in the COP oscillation frequency and the decay rate with increasing temperatures due to the anharmonic phonon-phonon scattering and electron-phonon scattering in the COP dissipation process, respectively. Our work paves the way for uncovering the coherent phonons in Dirac semimetals for the potential applications in optoelectronics and opto-spintronics.
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Affiliation(s)
- Ziyang Li
- Key Laboratory of Micro and Nano Photonic Structures (MOE), School of Information Science and Technology, Fudan University, Shanghai, China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Anke Song
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jinzhong Zhang
- Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
- Department of Physics, Xiamen University, Xiamen, China
| | - Zongzhi Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), School of Information Science and Technology, Fudan University, Shanghai, China.
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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Coherent Excitation of Optical Phonons in GaAs by Broadband Terahertz Pulses. Sci Rep 2016; 6:38264. [PMID: 27905563 PMCID: PMC5131294 DOI: 10.1038/srep38264] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2016] [Accepted: 11/07/2016] [Indexed: 11/08/2022] Open
Abstract
Coherent excitation and control of lattice motion by electromagnetic radiation in optical frequency range has been reported through variety of indirect interaction mechanisms with phonon modes. However, coherent phonon excitation by direct interaction of electromagnetic radiation and nuclei has not been demonstrated experimentally in terahertz (THz) frequency range mainly due to the lack of THz emitters with broad bandwidth suitable for the purpose. We report the experimental observation of coherent phonon excitation and detection in GaAs using ultrafast THz-pump/optical-probe scheme. From the results of THz pump field dependence, pump/probe polarization dependence, and crystal orientation dependence, we attributed THz wave absorption and linear electro-optic effect to the excitation and detection mechanisms of coherent polar TO phonons. Furthermore, the carrier density dependence of the interaction of coherent phonons and free carriers is reported.
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Makino K, Saito Y, Fons P, Kolobov AV, Nakano T, Tominaga J, Hase M. Anisotropic lattice response induced by a linearly-polarized femtosecond optical pulse excitation in interfacial phase change memory material. Sci Rep 2016; 6:19758. [PMID: 26805401 PMCID: PMC4726132 DOI: 10.1038/srep19758] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2015] [Accepted: 12/17/2015] [Indexed: 11/29/2022] Open
Abstract
Optical excitation of matter with linearly-polarized femtosecond pulses creates a transient non-equilibrium lattice displacement along a certain direction. Here, the pump and probe pulse polarization dependence of the photo-induced ultrafast lattice dynamics in (GeTe)2/(Sb2Te3)4 interfacial phase change memory material is investigated under obliquely incident conditions. Drastic pump polarization dependence of the coherent phonon amplitude is observed when the probe polarization angle is parallel to the c–axis of the sample, while the pump polarization dependence is negligible when the probe polarization angle is perpendicular to the c–axis. The enhancement of phonon oscillation amplitude due to pump polarization rotation for a specific probe polarization angle is only found in the early time stage (≤2 ps). These results indicate that the origin of the pump and probe polarization dependence is dominantly attributable to the anisotropically-formed photo-excited carriers which cause the directional lattice dynamics.
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Affiliation(s)
- Kotaro Makino
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan.,CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
| | - Yuta Saito
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan.,CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
| | - Paul Fons
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan.,CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
| | - Alexander V Kolobov
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan.,CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
| | - Takashi Nakano
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan.,CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
| | - Junji Tominaga
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan.,CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
| | - Muneaki Hase
- CREST, JST, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan.,Division of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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