Control of crystallographic orientation in diamond synthesis through laser resonant vibrational excitation of precursor molecules

Bi-Stability and Orientation Change of a Thin α-Fe2O3 Layer on a ε-Fe2O3 (004) Surface

This study reports the key ingredients that influence the orientation and stability of a α-Fe₂O₃ layer that grows on a metastable ε-Fe₂O₃ during pulsed laser deposition. Depending on the substrate temperature, two different α-Fe₂O₃ orientations arise on the ε-Fe₂O₃ (004) surface. At 800 °C, (2-10)_α-oriented α-Fe₂O₃ is stabilized, whereas at 700 °C, (006)_α orientation occurs. The (2-10)_α-oriented α-Fe₂O₃ layer possesses an interface with densely packed Fe ions with presumably considerable number of oxygen vacancies. On the other hand, the (006)_α-oriented α-Fe₂O₃ layer is stabilized, as in the case of the YSZ (100) substrate, due to the domain pattern with an in-plane rhombic shape, which is known to become an effective nucleation site. Growth with the unexpected (2-10)_α orientation can be understood based on a model that takes into account the surface energy as the dominant factor, which mainly stems from the presence of dangling bonds on the surface and the atomic vibration of the surface atoms. As the surface is one of the critical elements related to the specific functionality of a material, the present study will offer valuable insights into the designs of functional devices with novel surface properties.

Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth

The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition (MPCVD) diamond is presented. Samples have been grown under quite different conditions of doping and methane concentration in order to identify and distinguish the factors involved in the defects generation. TEM is used to reveal threading dislocations and planar defects. Sources of dislocation generation have been evidenced: (i) doping level versus growth plane, and (ii) methane concentration. The first source of dislocations was shown to generate <110> Burgers vector dislocations above a critical boron concentration, while the second induces <112> type Burgers vector above a critical methane/hydrogen molar ratio. The latter is attributed to partial dislocations whose origin is related to the dissociation of perfect ones by a Shockley process. This dissociation generated stacking faults that likely resulted in penetration twins, which were also observed on these samples. Lateral growth performed at low methane and boron content did not exhibit any dislocation.

Desorption Flame-Induced Atmospheric Pressure Chemical Ionization Mass Spectrometry for Rapid Real-World Sample Analysis

Flame-induced atmospheric pressure chemical ionization (FAPCI) is a solvent and high voltage-free APCI technique. It uses a flame to produce charged species that reacts with analytes for ionization, and generates intact molecular ions from organic compounds with minimal fragmentation. In this study, desorption FAPCI/MS was developed to rapidly characterize thermally stable organic compounds in liquid, cream, and solid states. Liquid samples were introduced into the ion source through a heated nebulizer, and the analytes formed in the heated nebulizer reacted with charged species in the source. For cream and solid sample analysis, the samples were positioned near the flame of the FAPCI source for thermal desorption and ionization. This approach provided a useful method to directly characterize samples with minimal pretreatment. Standards and real-world samples, such as drug tablets, ointment, and toy were analyzed to demonstrate the capability of desorption FAPCI/MS for rapid organic compound analysis.

Structural peculiarities of single crystal diamond needles of nanometer thickness

Diamond is attractive for various applications due to its unique mechanical and optical properties. In particular, single crystal diamond needles with high aspect ratios and sharp apexes of nanometer size are demanded for different types of optical sensors including optically sensing tip probes for scanning microscopy. This paper reports on electron microscopy and Raman spectroscopy characterization of the diamond needles having geometrically perfect pyramidal shapes with rectangular atomically flat bases with (001) crystallography orientation, 2-200 nm sharp apexes, and with lengths from about 10-160 μm. The needles were produced by selective oxidation of (001) textured polycrystalline diamond films grown by chemical vapor deposition. Here we study the types and distribution of defects inside and on the surface of the single crystal diamond needles. We show that sp3 type point defects are incorporated into the volume of the diamond crystal during growth, while the surface of the lateral facets is enriched by multiple extended defects. Nitrogen addition to the reaction mixture results in increase of the growth rate on {001} facets correlated with the rise in the concentration of sp3 type defects.