Lee YM, Lee SY, Sasaki T, Kim K, Ahn D, Jung MC. Two different phase-change origins with chemical- and structural-phase-changes in C doped (1.5 wt.%) In
3Sb
1Te
2.
Sci Rep 2016;
6:38663. [PMID:
27929133 PMCID:
PMC5144130 DOI:
10.1038/srep38663]
[Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2015] [Accepted: 11/14/2016] [Indexed: 11/09/2022] Open
Abstract
We fabricated C-doped (1.5 wt.%) In3Sb1Te2 (CIST) thin films with amorphous phase (a-CIST) using a sputter method. Two electrical-phase-changes at 250 and 275 °C were observed in the sheet resistance measurement. In order to understand the origin of these electrical-phase-changes, all samples were characterized by XRD, TEM, and HRXPS with synchrotron radiation. In a-CIST, only weak Sb-C bonding was observed. In the first electrical-phase-change at 250 °C, strong Sb-C bonding occurred without an accompanying structural/phase change (still amorphous). On the other hand, the second electrical-phase-change at 275 °C was due to the structural/phase change from amorphous to crystalline without a chemical state change.
Collapse