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Movahedian Z, Tavakoli-Anbaran H. Design and optimization of Si-35S betavoltaic liquid nuclear battery in micro dimensions in order to build. ANN NUCL ENERGY 2020. [DOI: 10.1016/j.anucene.2020.107483] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
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Wang X, Han Y, Zhang J, Li Z, Li T, Zhao X, Wu Y. The design of a direct charge nuclear battery with high energy conversion efficiency. Appl Radiat Isot 2019; 148:147-151. [DOI: 10.1016/j.apradiso.2019.03.040] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2018] [Revised: 03/26/2019] [Accepted: 03/29/2019] [Indexed: 11/30/2022]
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Wang N, Ma Y, Chen J, Chen C, San H, Chen J, Cheng Z. Defect-induced betavoltaic enhancement in black titania nanotube arrays. NANOSCALE 2018; 10:13028-13036. [PMID: 29952389 DOI: 10.1039/c8nr02824a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Utilizing high-energy beta particles emitted from radioisotopes for long-lifetime betavoltaic cells is a great challenge due to their low energy conversion efficiency (ECE). Here we report a betavoltaic cell fabricated using black titania nanotube arrays (TiO2 NTAs) by electrochemical anodization and Ar-annealing techniques. The obtained samples show enhanced electrical conductivity as well as Vis-NIR light absorption by the introduction of oxygen vacancy (OV) and Ti3+ defects in reduced TiO2-x NTAs. A 20 mCi63 Ni source was assembled into TiO2 NTAs to form a sandwich-type betavoltaic cell. By I-V measurements, the Ar-annealed TiO2 NTAs at 650 °C exhibited a maximum ECE of 3.65% with Voc = 1.13 V, Jsc = 103.3 nA cm-2, and Pmax = 37 nW cm-2. In comparison with air-annealed TiO2 NTAs, the enhancement of the betavoltaic effect in reduced TiO2-x NTAs can be attributed to the suppression of e-h recombination induced by the generation of OV and Ti3+ defects, serving as electron donors as well as electron traps that not only contribute to the increase of electrical conductance, but also facilitate the charge carrier separation.
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Affiliation(s)
- Na Wang
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China.
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Ma Y, Wang N, Chen J, Chen C, San H, Chen J, Cheng Z. Betavoltaic Enhancement Using Defect-Engineered TiO 2 Nanotube Arrays through Electrochemical Reduction in Organic Electrolytes. ACS APPLIED MATERIALS & INTERFACES 2018; 10:22174-22181. [PMID: 29882646 DOI: 10.1021/acsami.8b05151] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Utilizing high-energy beta particles emitted from radioisotopes for long-lifetime betavoltaic cells is a great challenge due to low energy conversion efficiency. Here, we report a betavoltaic cell fabricated using TiO2 nanotube arrays (TNTAs) electrochemically reduced in ethylene glycol electrolyte (EGECR-TNTAs) for the enhancement of the betavoltaic effect. The electrochemical reduction of TNTAs using high cathodic bias in organic electrolytes is indeed a facile and effective strategy to induce in situ self-doping of oxygen vacancy (OV) and Ti3+ defects. The black EGECR-TNTAs are highly stable with a significantly narrower band gap and higher electrical conductivity as well as UV-vis-NIR light absorption. A 20 mCi of 63Ni betavoltaic cell based on the reduced TNTAs exhibits a maximum ECE of 3.79% with open-circuit voltage of 1.04 V, short-circuit current density of 117.5 nA cm-2, and a maximum power density of 39.2 nW cm-2. The betavoltaic enhancement can be attributed to the enhanced charge carrier transport and separation as well as multiple exciton generation of electron-hole pairs due the generation of OV and Ti3+ interstitial bands below the conductive band of TiO2.
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Affiliation(s)
- Yang Ma
- Pen-Tung Sah Institute of Micro-Nano Science and Technology , Xiamen University , Xiamen 361005 , China
- Shenzhen Research Institute of Xiamen University , Shenzhen 518000 , China
| | - Na Wang
- Pen-Tung Sah Institute of Micro-Nano Science and Technology , Xiamen University , Xiamen 361005 , China
- Shenzhen Research Institute of Xiamen University , Shenzhen 518000 , China
| | - Jiang Chen
- Pen-Tung Sah Institute of Micro-Nano Science and Technology , Xiamen University , Xiamen 361005 , China
- Shenzhen Research Institute of Xiamen University , Shenzhen 518000 , China
| | - Changsong Chen
- Pen-Tung Sah Institute of Micro-Nano Science and Technology , Xiamen University , Xiamen 361005 , China
- Shenzhen Research Institute of Xiamen University , Shenzhen 518000 , China
| | - Haisheng San
- Pen-Tung Sah Institute of Micro-Nano Science and Technology , Xiamen University , Xiamen 361005 , China
- Shenzhen Research Institute of Xiamen University , Shenzhen 518000 , China
- Shenzhen Betary Energy Technologies Co., Ltd. , Shenzhen 518063 , China
| | - Jige Chen
- Shenzhen Betary Energy Technologies Co., Ltd. , Shenzhen 518063 , China
| | - Zhengdong Cheng
- Shenzhen Betary Energy Technologies Co., Ltd. , Shenzhen 518063 , China
- Artie McFerrin Department of Chemical Engineering , Texas A&M University , College Station , Texas 77843-3122 , United States
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Dixon J, Rajan A, Bohlemann S, Coso D, Upadhyaya AD, Rohatgi A, Chu S, Majumdar A, Yee S. Evaluation of a Silicon 90Sr Betavoltaic Power Source. Sci Rep 2016; 6:38182. [PMID: 27905521 PMCID: PMC5131278 DOI: 10.1038/srep38182] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2016] [Accepted: 10/27/2016] [Indexed: 11/09/2022] Open
Abstract
Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.
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Affiliation(s)
- Jefferson Dixon
- G. W. W. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Aravindh Rajan
- G. W. W. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Steven Bohlemann
- G. W. W. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Dusan Coso
- Department of Mechanical Engineering, Stanford University, California 94305, USA
| | - Ajay D Upadhyaya
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Ajeet Rohatgi
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Steven Chu
- Department of Physics, Stanford University, California 94305, USA
| | - Arun Majumdar
- Department of Mechanical Engineering, Stanford University, California 94305, USA
| | - Shannon Yee
- G. W. W. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
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Chen C, Wang N, Zhou P, San H, Wang K, Chen X. Electrochemically Reduced Graphene Oxide on Well-Aligned Titanium Dioxide Nanotube Arrays for Betavoltaic Enhancement. ACS APPLIED MATERIALS & INTERFACES 2016; 8:24638-24644. [PMID: 27575802 DOI: 10.1021/acsami.6b08112] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report a novel betavoltaic device with significant conversion efficiency by using electrochemically reduced graphene oxide (ERGO) on TiO2 nanotube arrays (TNTAs) for enhancing the absorption of beta radiation as well as the transportation of carriers. ERGO on TNTAs (G-TNTAs) were prepared by electrochemical anodization and subsequently cyclic voltammetry techniques. A 10 mCi of (63)Ni/Ni source was assembled to G-TNTAs to form the sandwich-type betavoltaic devices (Ni/(63)Ni/G-TNTAs/Ti). By I-V measurements, the optimum betavoltaic device exhibits a significant effective energy conversion efficiency of 26.55% with an open-circuit voltage of 2.38 V and a short-circuit current of 14.69 nAcm(-2). The experimental results indicate that G-TNTAs are a high-potential nanocomposite for developing betavoltaic batteries.
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Affiliation(s)
- Changsong Chen
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University , Xiamen 361005, China
| | - Na Wang
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University , Xiamen 361005, China
| | - Peng Zhou
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University , Xiamen 361005, China
| | - Haisheng San
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University , Xiamen 361005, China
- Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University , Xiamen 361005, China
| | - Kaiying Wang
- Department of Micro and Nano Systems Technology, Buskerud and Vestfold University College , Tønsberg N-3103, Norwayd
| | - Xuyuan Chen
- Department of Micro and Nano Systems Technology, Buskerud and Vestfold University College , Tønsberg N-3103, Norwayd
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