Stable two-dimensional conductance switch of polyaniline molecule connecting to graphene nanoribbons

Water-accelerated π-Stacking Reaction in Benzene Cluster Cation

Single molecule electron devices (SMEDs) have been widely studied through both experiments and theoretical calculations because they exhibit certain specific properties that general macromolecules do not possess. In actual SMED systems, a residual water molecule strongly affects the electronic properties of the SMED, even if only one water molecule is present. However, information about the effect of H₂O molecules on the electronic properties of SMEDs is quite limited. In the present study, the effect of H₂O on the ON-OFF switching property of benzene-based molecular devices was investigated by means of a direct ab initio molecular dynamics (AIMD) method. T- and H-shaped benzene dimers and trimers were examined as molecular devices. The present calculations showed that a H₂O molecule accelerates the π-stacking formation in benzene molecular electronic systems. The times of stacking formation in a benzene dimer cation (n = 2) were calculated to be 460 fs (H₂O) and 947 fs (no-H₂O), while those in a trimer cation (n = 3) were 551 fs (H₂O) and 1019 fs (no-H₂O) as an average of the reaction time. This tendency was not dependent on the levels of theory used. Thus, H₂O produced positive effects in benzene-based molecular electronics. The mechanism of π-stacking was discussed based on the theoretical results.

Influence of spatial distribution of molecule on the switching behavior: A first-principles study

We perform first-principles calculations to investigate the electronic transport properties of chalcone and flavanone molecules sandwiched between graphene electrodes. These two molecules can be reversibly converted between open and closed states induced by pH, and the significant switching behaviors are observed. The currents and switching ratios are influenced by rotating molecules around the [Formula: see text] axis, which are discussed by the transmission eigenstates, electrostatic potential distributions and transmission spectra. The observed negative differential resistance effect is explained in chalcone configuration. The results suggest that spatial distributions of molecules will influence the performance of devices, indicating a potential application in future molecular circuits.

Tunnable rectifying performance of in-plane metal-semiconductor junctions based on passivated zigzag phosphorene nanoribbons

Using first principles density functional theory, we perform a systematic study of the band structures of passivated zigzag phosphorene nanoribbons (ZPNRs) and the transport properties of in-plane metal–semiconductor junctions. It is found that the ZPNR passivated by H, Cl or F atoms is a semiconductor, and the ZPNR passivated by C, O or S atoms is a metal. Therefore, ZPNRs with different passivated atoms can be fabricated into an in-plane metal–semiconductor junction. The calculated current–voltage characteristics indicate that these in-plane metal–semiconductor junctions can exhibit excellent rectification behavior. More importantly, we find that the type of passivated atom plays a very important role in the rectification ratio of this in-plane metal–semiconductor junction. The findings are very useful for the further design of functional nanodevices based on ZPNRs.

Using first principles density functional theory, we perform a systematic study of the band structures of passivated zigzag phosphorene nanoribbons (ZPNRs) and the transport properties of in-plane metal–semiconductor junctions.