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Li S, Sharma A, Márton Z, Nugraha PS, Lombosi C, Ollmann Z, Márton I, Dombi P, Hebling J, Fülöp JA. Subcycle surface electron emission driven by strong-field terahertz waveforms. Nat Commun 2023; 14:6596. [PMID: 37852982 PMCID: PMC10584819 DOI: 10.1038/s41467-023-42316-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Accepted: 10/06/2023] [Indexed: 10/20/2023] Open
Abstract
The advent of intense terahertz (THz) sources opened a new era when the demonstration of the acceleration and manipulation of free electrons by THz pulses became within reach. THz-field-driven electron emission was predicted to be confined to a single burst due to the single-cycle waveform. Here we demonstrate the confinement of single-cycle THz-waveform-driven electron emission to one of the two half cycles from a solid surface emitter. Either the leading or the trailing half cycle was active, controlled by reversing the field polarity. THz-driven single-burst surface electron emission sources, which do not rely on field-enhancement structures, will impact the development of THz-powered electron acceleration and manipulation devices, all-THz compact electron sources, THz waveguides and telecommunication, THz-field-based measurement techniques and solid-state devices.
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Affiliation(s)
- Shaoxian Li
- Szentágothai Research Centre, University of Pécs, 7624, Pécs, Hungary
- Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, and the Key Laboratory of Optoelectronics Information and Technology, Ministry of Education, Tianjin University, 300072, Tianjin, China
| | - Ashutosh Sharma
- ELI-ALPS Research Institute, ELI-HU Non-Profit Ltd., 6728, Szeged, Hungary
| | - Zsuzsanna Márton
- ELI-ALPS Research Institute, ELI-HU Non-Profit Ltd., 6728, Szeged, Hungary
- Institute of Physics, University of Pécs, 7624, Pécs, Hungary
| | - Priyo S Nugraha
- Szentágothai Research Centre, University of Pécs, 7624, Pécs, Hungary
- HUN-REN-PTE High-Field Terahertz Research Group, 7624, Pécs, Hungary
| | - Csaba Lombosi
- Szentágothai Research Centre, University of Pécs, 7624, Pécs, Hungary
| | - Zoltán Ollmann
- Szentágothai Research Centre, University of Pécs, 7624, Pécs, Hungary
- Institute of Physics, University of Pécs, 7624, Pécs, Hungary
| | - István Márton
- Wigner Research Centre for Physics, 1121, Budapest, Hungary
- Institute for Nuclear Research (Atomki), 4001, Debrecen, Hungary
| | - Péter Dombi
- ELI-ALPS Research Institute, ELI-HU Non-Profit Ltd., 6728, Szeged, Hungary
- Wigner Research Centre for Physics, 1121, Budapest, Hungary
| | - János Hebling
- Szentágothai Research Centre, University of Pécs, 7624, Pécs, Hungary
- Institute of Physics, University of Pécs, 7624, Pécs, Hungary
- HUN-REN-PTE High-Field Terahertz Research Group, 7624, Pécs, Hungary
| | - József A Fülöp
- Szentágothai Research Centre, University of Pécs, 7624, Pécs, Hungary.
- ELI-ALPS Research Institute, ELI-HU Non-Profit Ltd., 6728, Szeged, Hungary.
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Ultrafast plasmonic photoemission in the single-cycle and few-cycle regimes. Sci Rep 2022; 12:3932. [PMID: 35273213 PMCID: PMC8913738 DOI: 10.1038/s41598-022-07259-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Accepted: 02/15/2022] [Indexed: 11/29/2022] Open
Abstract
Due to the highly increased interest in the development of state-of-the-art applications of photoemission in ultrafast electron microscopy, development of photocathodes and many more applications, a correct theoretical understanding of the underlying phenomena is needed. Within the framework of the single active electron approximation the most accurate results can be obtained by the direct solution of the time-dependent Schrödinger equation (TDSE). In this work, after a brief presentation of a numerically improved version of a mixed 1D-TDSE method, we investigated the characteristics of electron spectra obtained from the surface of metal nanoparticles irradiated with ultrashort laser pulses. During our investigation different decay lengths of the plasmonic-enhanced incident field in the vicinity of the metal were considered. Using the simulated spectra we managed to identify the behavior of the cutoff energy as a function of decay length in the strong-field, multiphoton and transition regimes.
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Lang P, Song X, Ji B, Tao H, Dou Y, Gao X, Hao Z, Lin J. Spatial- and energy-resolved photoemission electron from plasmonic nanoparticles in multiphoton regime. OPTICS EXPRESS 2019; 27:6878-6891. [PMID: 30876264 DOI: 10.1364/oe.27.006878] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2018] [Accepted: 01/21/2019] [Indexed: 05/27/2023]
Abstract
Spatial-resolved photoelectron spectra have been observed from plasmonic metallic nanostructure and flat metal surface by a combination of time-of-flight photoemission electron microscope and femtosecond laser oscillator. The photoemission's main contribution is at localized 'hot spots,' where the plasmonic effect dominates and multiphoton photoemission is confirmed as the responsible mechanism for emission in both samples. Photoelectron spectra from hot spots exponentially decay in high energy regimes, smearing out the Fermi edge in Au flat surface. This phenomenon is explained by the emergence of above threshold photoemission that is induced by plasmonic effect; other competing mechanisms are ruled out. It is the first time that we have observed the emergence of high kinetic energy photoelectron in weak field region around 'hot spot.' We attribute the emergence of high kinetic energy photoelectron to the drifting of the liberated electron from plasmonic hot spot and driven by the gradient of plasmonic field.
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Shen Y, Chen H, Xu N, Xing Y, Wang H, Zhan R, Gong L, Wen J, Zhuang C, Chen X, Wang X, Zhang Y, Liu F, Chen J, She J, Deng S. A Plasmon-Mediated Electron Emission Process. ACS NANO 2019; 13:1977-1989. [PMID: 30747519 DOI: 10.1021/acsnano.8b08444] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Light-driven electron emission plays an important role in modern optoelectronic devices. However, such a process usually requires a light field with either a high intensity or a high frequency, which is not favorable for its implementations and difficult for its integrations. To solve these issues, we propose to combine plasmonic nanostructures with nanoelectron emitters of low work function. In such a heterostructure, hot electrons generated by plasmon resonances upon light excitation can be directly injected into the adjacent emitter, which can subsequently be emitted into the vacuum. Electron emission of high efficiency can be obtained with light fields of moderate intensities and visible wavelengths, which is a plasmon-mediated electron emission (PMEE) process. We have demonstrated our proposed design using a gold-on-graphene (Au-on-Gr) nanostructure, which can have electron emission with light intensity down to 73 mW·cm-2. It should be noted that the field electron emission is not involved in such a PMEE process. This proposal is of interest for applications including cold-cathode electron sources, advanced photocathodes, and micro- and nanoelectronic devices relying on free electrons.
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Affiliation(s)
- Yan Shen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Yang Xing
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Hao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Runze Zhan
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Li Gong
- Instrumental Analysis & Research Center , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Jinxiu Wen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Chao Zhuang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Xuexian Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Ximiao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Yu Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Fei Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Juncong She
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
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Ciappina MF, Pérez-Hernández JA, Landsman AS, Okell WA, Zherebtsov S, Förg B, Schötz J, Seiffert L, Fennel T, Shaaran T, Zimmermann T, Chacón A, Guichard R, Zaïr A, Tisch JWG, Marangos JP, Witting T, Braun A, Maier SA, Roso L, Krüger M, Hommelhoff P, Kling MF, Krausz F, Lewenstein M. Attosecond physics at the nanoscale. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2017; 80:054401. [PMID: 28059773 DOI: 10.1088/1361-6633/aa574e] [Citation(s) in RCA: 38] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Recently two emerging areas of research, attosecond and nanoscale physics, have started to come together. Attosecond physics deals with phenomena occurring when ultrashort laser pulses, with duration on the femto- and sub-femtosecond time scales, interact with atoms, molecules or solids. The laser-induced electron dynamics occurs natively on a timescale down to a few hundred or even tens of attoseconds (1 attosecond = 1 as = 10-18 s), which is comparable with the optical field. For comparison, the revolution of an electron on a 1s orbital of a hydrogen atom is ∼152 as. On the other hand, the second branch involves the manipulation and engineering of mesoscopic systems, such as solids, metals and dielectrics, with nanometric precision. Although nano-engineering is a vast and well-established research field on its own, the merger with intense laser physics is relatively recent. In this report on progress we present a comprehensive experimental and theoretical overview of physics that takes place when short and intense laser pulses interact with nanosystems, such as metallic and dielectric nanostructures. In particular we elucidate how the spatially inhomogeneous laser induced fields at a nanometer scale modify the laser-driven electron dynamics. Consequently, this has important impact on pivotal processes such as above-threshold ionization and high-order harmonic generation. The deep understanding of the coupled dynamics between these spatially inhomogeneous fields and matter configures a promising way to new avenues of research and applications. Thanks to the maturity that attosecond physics has reached, together with the tremendous advance in material engineering and manipulation techniques, the age of atto-nanophysics has begun, but it is in the initial stage. We present thus some of the open questions, challenges and prospects for experimental confirmation of theoretical predictions, as well as experiments aimed at characterizing the induced fields and the unique electron dynamics initiated by them with high temporal and spatial resolution.
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Affiliation(s)
- M F Ciappina
- Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Str. 1, D-85748 Garching, Germany. Institute of Physics of the ASCR, ELI-Beamlines project, Na Slovance 2, 18221 Prague, Czech Republic
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6
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Optical Parametric Amplification Techniques for the Generation of High-Energy Few-Optical-Cycles IR Pulses for Strong Field Applications. APPLIED SCIENCES-BASEL 2017. [DOI: 10.3390/app7030265] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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7
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Forati E, Dill TJ, Tao AR, Sievenpiper D. Photoemission-based microelectronic devices. Nat Commun 2016; 7:13399. [PMID: 27811946 PMCID: PMC5097168 DOI: 10.1038/ncomms13399] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2016] [Accepted: 09/29/2016] [Indexed: 12/22/2022] Open
Abstract
The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices.
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Affiliation(s)
- Ebrahim Forati
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, California 92098-0407, USA
| | - Tyler J Dill
- Department of NanoEngineering, University of California San Diego, La Jolla, California 92098-0448, USA
| | - Andrea R Tao
- Department of NanoEngineering, University of California San Diego, La Jolla, California 92098-0448, USA
| | - Dan Sievenpiper
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, California 92098-0407, USA
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8
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De Giacomo A, Koral C, Valenza G, Gaudiuso R, Dell’Aglio M. Nanoparticle Enhanced Laser-Induced Breakdown Spectroscopy for Microdrop Analysis at subppm Level. Anal Chem 2016; 88:5251-7. [DOI: 10.1021/acs.analchem.6b00324] [Citation(s) in RCA: 83] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Affiliation(s)
- Alessandro De Giacomo
- University of Bari, Department of Chemistry, Via Orabona 4, 70126 Bari, Italy
- CNR-NANOTEC, Via Amendola 122/D, 70126 Bari, Italy
| | - Can Koral
- University of Bari, Department of Chemistry, Via Orabona 4, 70126 Bari, Italy
| | - Gabriele Valenza
- University of Bari, Department of Chemistry, Via Orabona 4, 70126 Bari, Italy
- CNR-NANOTEC, Via Amendola 122/D, 70126 Bari, Italy
| | - Rosalba Gaudiuso
- University of Bari, Department of Chemistry, Via Orabona 4, 70126 Bari, Italy
- CNR-NANOTEC, Via Amendola 122/D, 70126 Bari, Italy
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Austin DR, Kafka KRP, Trendafilov S, Shvets G, Li H, Yi AY, Szafruga UB, Wang Z, Lai YH, Blaga CI, DiMauro LF, Chowdhury EA. Laser induced periodic surface structure formation in germanium by strong field mid IR laser solid interaction at oblique incidence. OPTICS EXPRESS 2015; 23:19522-19534. [PMID: 26367610 DOI: 10.1364/oe.23.019522] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Laser induced periodic surface structures (LIPSS or ripples) were generated on single crystal germanium after irradiation with multiple 3 µm femtosecond laser pulses at a 45° angle of incidence. High and low spatial frequency LIPSS (HSFL and LSFL, respectively) were observed for both s- and p-polarized light. The measured LSFL period for p-polarized light was consistent with the currently established LIPSS origination model of coupling between surface plasmon polaritons (SPP) and the incident laser pulses. A vector model of SPP coupling is introduced to explain the formation of s-polarized LSFL away from the center of the damage spot. Additionally, a new method is proposed to determine the SPP propagation length from the decay in ripple depth. This is used along with the measured LSFL period to estimate the average electron density and Drude collision time of the laser-excited surface. Finally, full-wave electromagnetic simulations are used to corroborate these results while simultaneously offering insight into the nature of LSFL formation.
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