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Haddadan F, Soroosh M, Alaei-Sheini N. Cross-talk reduction in a graphene-based ultra-compact plasmonic encoder using an Au nano-ridge on a silicon substrate. APPLIED OPTICS 2022; 61:3209-3217. [PMID: 35471301 DOI: 10.1364/ao.449123] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2021] [Accepted: 03/17/2022] [Indexed: 06/14/2023]
Abstract
Plasmonic waveguides have been widely studied in the rapid development of optically integrated circuits. The cross talk between plasmonic waveguides is a critical issue that should be considered. Nano-plasmonic waveguides with tunable graphene-free patterns on silicon ridge have very attractive features. Despite these attractive features, the low confinement in plasmonic waveguides reduces the coupling length. This issue results in high cross talk in optical integrated circuits. We present a solution to the mentioned problem. A metal ridge under the plasmonic channel helps to reduce the cross-talk value. A new graphene-based plasmonic waveguide has been proposed for achieving the switching operation at terahertz frequencies. Based on the designed waveguide, a 4-to-2 plasmonic encoder with the cross talk of -17.33dB has been presented. Using six waveguides, the encoder is designed with a contrast ratio of 14.44 dB and an area of 0.36µm2. Concerning the obtained results, the presented structure can be used in optical integrated circuits.
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Li Y, Liu FR, Han G, Chen QY, Zhang YZ, Xie XX, Zhang LL, Lian YB. Design of an electric-driven nonvolatile low-energy-consumption phase change optical switch. NANOTECHNOLOGY 2021; 32:405201. [PMID: 34171853 DOI: 10.1088/1361-6528/ac0ead] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Accepted: 06/24/2021] [Indexed: 06/13/2023]
Abstract
Traditional optical switches relying on the weak, volatile thermo-optic or electro-optic effects of Si or SiN waveguides show a high consumption and large footprint. In this paper, we reported an electric-driven phase change optical switch consisting of a Si waveguide, Ge2Sb2Te5(GST) thin film and graphene heater suitable for large-scale integration and high-speed switching. The reversible transition between the amorphous and crystalline states was achieved by applying two different voltage pulses of 1.4 V (SET) and 4 V (RESET). The optical performance of the proposed switch showed a high extinction ration of 44-46 dB in a wide spectral range (1525-1575 nm), an effective index variation of Δneff = 0.49 and a mode loss variation of Δα = 15 dBμm-1at the wavelength of 1550 nm. In thermal simulations, thanks to the ultra-high thermal conductivity of graphene, the proposed switch showed that the consumption for the SET process was only 3.528 pJ with a 1.4 V pulse of 5 ns, while a 4 V pulse of 1.5 ns was needed for RESET process with a consumption of 1.05 nJ. Our work is helpful to analyze the thermal-conduction phase transition process of on-chip phase change optical switches, and the design of the low-energy-consumption switch is conducive to the integrated application of photonic chips.
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Affiliation(s)
- Y Li
- Key Laboratory of Trans-scale Laser Manufacturing (Beijing University of Technology), Ministry of Education, Beijing 100124, People's Republic of China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - F R Liu
- Key Laboratory of Trans-scale Laser Manufacturing (Beijing University of Technology), Ministry of Education, Beijing 100124, People's Republic of China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - G Han
- Key Laboratory of Trans-scale Laser Manufacturing (Beijing University of Technology), Ministry of Education, Beijing 100124, People's Republic of China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - Q Y Chen
- Key Laboratory of Trans-scale Laser Manufacturing (Beijing University of Technology), Ministry of Education, Beijing 100124, People's Republic of China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - Y Z Zhang
- Key Laboratory of Trans-scale Laser Manufacturing (Beijing University of Technology), Ministry of Education, Beijing 100124, People's Republic of China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - X X Xie
- Key Laboratory of Trans-scale Laser Manufacturing (Beijing University of Technology), Ministry of Education, Beijing 100124, People's Republic of China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - L L Zhang
- Key Laboratory of Trans-scale Laser Manufacturing (Beijing University of Technology), Ministry of Education, Beijing 100124, People's Republic of China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - Y B Lian
- Key Laboratory of Trans-scale Laser Manufacturing (Beijing University of Technology), Ministry of Education, Beijing 100124, People's Republic of China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, People's Republic of China
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Rezaei MH, Shiri M. High-performance tunable resonant electro-optical modulator based on suspended graphene waveguides. OPTICS EXPRESS 2021; 29:16299-16311. [PMID: 34154196 DOI: 10.1364/oe.425599] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
The exceptional tunable waveguiding characteristics of graphene surface plasmons have remained unrivaled since it has inspired many electro-optical (EO) devices in terahertz (THz) and mid-infrared (MIR) photonic circuits. We propose and numerically investigate a low-loss, highly extinctive resonant EO modulator based on a suspended graphene plasmonic waveguide. Unlike other resonance-based modulators, the input power has negligible interaction with lossy resonance cavity in on-state, remarkably reducing the losses. Achieving the insertion loss (IL) of 1.3 dB and the extinction ratio (ER) of 22 dB within a footprint less than 3 µm2 substantiates the superiority of the proposed structure. The charge transport simulations are first conducted to calculate the steady-state charge distribution. The three-dimensional finite-difference time-domain (3D-FDTD) method is utilized to monitor the guided wave propagation and modulation properties. We show that the transmission spectrum is highly dependent upon geometric parameters of the structure, and the modulator can be effectively tuned to operate at the desired wavelength by applying a suitable gate voltage. Simulation results show the modulation bandwidth of 71 GHz corresponding to the total capacitance of 4.8 fF within the active area. The novel EO modulator structure has shown great potentiality and flexibility to find other applications in MIR and THz integrated circuits like controllable notch filters and switches.
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Ren J, Wang W, Qiu W, Qiu P, Wang Z, Lin Z, Wang JX, Kan Q, Pan JQ. Dynamic tailoring of electromagnetic behaviors of graphene plasmonic oligomers by local chemical potential. Phys Chem Chem Phys 2018; 20:16695-16703. [PMID: 29877522 DOI: 10.1039/c8cp01281d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
In the mid-infrared and terahertz (THz) regime, graphene supports tunable surface plasmon resonance (SPR) by controlling the chemical potential, which promotes light-matter interaction at the selected wavelength, showing exceptional promise for optoelectronic applications. In this article, we show that the electromagnetic (EM) response of graphene oligomers can be substantially modified by the modification of the local chemical potential, strengthening or reducing the intrinsic plasmonic modes. The effect mechanism is corroborated by a graphene nanocluster composed of 13 nanodisks with D6h symmetry; by transforming to D3h symmetry, the effect mechanism was retained and more available plasmonic resonance modes appeared. The intriguing properties open a new way to design nanodevices made of graphene oligomers with highly efficient photoresponse enhancement and tunable spectral selectivity for highly accurate photodetection.
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Affiliation(s)
- Junbo Ren
- Fujian Key Laboratory of Light Propagation and Transformation, College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China.
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Yang J, Xin H, Han Y, Chen D, Zhang J, Huang J, Zhang Z. Ultra-compact beam splitter and filter based on a graphene plasmon waveguide. APPLIED OPTICS 2017; 56:9814-9821. [PMID: 29240130 DOI: 10.1364/ao.56.009814] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2017] [Accepted: 11/15/2017] [Indexed: 06/07/2023]
Abstract
This paper presents a sheet of graphene-ribbon waveguide as a simple and ultra-compact splitter and filter in the mid-infrared waveband. The central wavelength of the graphene surface plasmons (GSPs) and the coupling intensity of this splitter can be tuned by changing the physical parameters, such as the chemical potential, the width of the waveguide, the gap between neighboring graphene ribbons, the refractive index of the substrate, the carrier relaxation time, etc. The effects of these parameters on GSP waves and beam-splitter specifications are numerically depicted based on the finite-difference time-domain method. This proposed structure can be used to construct an ultra-compact fast-tunable beam splitter, filter, modulator, and switch in the mid-infrared range.
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Kim Y, Kwon MS. Mid-infrared subwavelength modulator based on grating-assisted coupling of a hybrid plasmonic waveguide mode to a graphene plasmon. NANOSCALE 2017; 9:17429-17438. [PMID: 29104985 DOI: 10.1039/c7nr07045d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
This work reports a mid-infrared modulator based on a hybrid plasmonic waveguide with graphene on a grating in its slot region. The modulator utilizes a graphene plasmon for electro-optic tuning in a more practical and effective way than graphene-plasmon-based waveguide devices studied up to now. The hybrid plasmonic waveguide can be easily and efficiently integrated with input and output photonic waveguides. It supports a hybrid plasmonic waveguide mode and a graphene-plasmon-based waveguide mode. Grating-assisted coupling of the former to the latter in it is demonstrated to work successfully even though the two modes have significantly different propagation constants and losses. Theoretical investigation of the modulator shows that the coupling via the grating of length 5.92 μm generates a deep rejection band at a wavelength of 8.014 μm in the transmission spectrum of the output photonic waveguide of the modulator. With the graphene chemical potential tuned between 0.6 eV and 0.65 eV, the transmission at the wavelength is modulated between -27 dB and -1.8 dB. The subwavelength modulator, which may have a large bandwidth and small energy consumption, is expected to play a key role in free-space communications and sensing requiring mid-infrared integrated photonics.
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Affiliation(s)
- Yonghan Kim
- School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, 50, UNIST-gil, Eonyang-eup, Ulju-gun, Ulsan 44919, Republic of Korea.
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Song C, Xia X, Hu ZD, Liang Y, Wang J. Characteristics of Plasmonic Bragg Reflectors with Graphene-Based Silicon Grating. NANOSCALE RESEARCH LETTERS 2016; 11:419. [PMID: 27654279 PMCID: PMC5031573 DOI: 10.1186/s11671-016-1633-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2016] [Accepted: 09/12/2016] [Indexed: 06/01/2023]
Abstract
We propose a plasmonic Bragg reflector (PBR) composed of a single-layer graphene-based silicon grating and numerically study its performance. An external voltage gating has been applied to graphene to tune its optical conductivity. It is demonstrated that SPP modes on graphene exhibit a stopband around the Bragg wavelengths. By introducing a nano-cavity into the PBR, a defect resonance mode is formed inside the stopband. We further design multi-defect PBR to adjust the characteristics of transmission spectrum. In addition, through patterning the PBR unit into multi-step structure, we lower the insertion loss and suppress the rippling in transmission spectra. The finite element method (FEM) has been utilized to perform the simulation work.
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Affiliation(s)
- Ci Song
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, China
| | - Xiushan Xia
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, China
| | - Zheng-Da Hu
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, China
| | - Youjian Liang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, China
| | - Jicheng Wang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, China.
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 912, Beijing, 100083, China.
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Argyropoulos C. Enhanced transmission modulation based on dielectric metasurfaces loaded with graphene. OPTICS EXPRESS 2015; 23:23787-23797. [PMID: 26368472 DOI: 10.1364/oe.23.023787] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We present a hybrid graphene/dielectric metasurface design to achieve strong tunable and modulated transmission at near-infrared (near-IR) frequencies. The proposed device is constituted by periodic pairs of asymmetric silicon nanobars placed over a silica substrate. An one-atom-thick graphene sheet is positioned over the all-dielectric metasurface. The in-plane electromagnetic fields are highly localized and enhanced with this metasurface due to its very low Ohmic losses at near-IR wavelengths. They strongly interact with graphene. Sharp Fano-type transmission spectrum is obtained at the resonant frequency of this hybrid configuration due to the cancelation of the electric and magnetic dipole responses at this frequency point. The properties of the graphene monolayer flake can be adjusted by tuning its Fermi energy or chemical potential, leading to different doping levels and, equivalently, material parameters. As a result, the Q-factor and the Fano-type resonant transmission spectrum of the proposed hybrid system can be efficiently tuned and controlled due to the strong light-graphene interaction. Higher than 60% modulation in the transmission coefficient is reported at near-IR frequencies. The proposed hybrid graphene/dielectric nanodevice has compact footprint, fast speed, and can be easily integrated to the current CMOS technology. These features would have promising applications to near-IR tunable filters, faster optical interconnects, efficient sensors, switches, and amplitude modulators.
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