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Zhao C, Chen H, Ali MU, Yan C, Liu Z, He Y, Meng H. Improving the Performance of Red Organic Light-Emitting Transistors by Utilizing a High- k Organic/Inorganic Bilayer Dielectric. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36902-36909. [PMID: 35930678 DOI: 10.1021/acsami.2c07216] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Integration of electrical switching and light emission in a single unit makes organic light-emitting transistors (OLETs) highly promising multifunctional devices for next-generation active-matrix flat-panel displays and related applications. Here, high-performance red OLETs are fabricated in a multilayer configuration that incorporates a zirconia (ZrOx)/cross-linked poly(vinyl alcohol) (C-PVA) bilayer as a dielectric. The developed organic/inorganic bilayer dielectric renders high dielectric constant as well as improved dielectric/semiconductor interface quality, contributing to enhanced carrier mobility and high current density. In addition, an efficient red phosphorescent organic emitter doped in a bihost system is employed as the emitting layer for an effective exciton formation and light generation. Consequently, our optimized red OLETs displayed a high brightness of 16 470 cd m-2 and a peak external quantum efficiency of 11.9% under a low gate and source-drain voltage of -24 V. To further boost the device performance, an electron-blocking layer is introduced for ameliorated charge-carrier balance and hence suppressed exciton-charge quenching, which resulted in an improved maximum brightness of 20 030 cd m-2. We anticipate that the new device optimization approaches proposed in this work would spur further development of efficient OLETs with high brightness and curtailed efficiency roll-off.
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Affiliation(s)
- Changbin Zhao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Hongming Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Muhammad Umair Ali
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P. R. China
| | - Chaoyi Yan
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Zhenguo Liu
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Yaowu He
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Hong Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
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Yuan D, Awais MA, Sharapov V, Liu X, Neshchadin A, Chen W, Yu L. Synergy between Photoluminescence and Charge Transport Achieved by Finely Tuning Polymeric Backbones for Efficient Light-Emitting Transistor. J Am Chem Soc 2021; 143:5239-5246. [PMID: 33755466 DOI: 10.1021/jacs.1c01659] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
The lack of design principle for developing high-performance polymer materials displaying strong fluorescence and high ambipolar charge mobilities limited their performance in organic light-emitting transistors (OLETs), electrically pumped organic laser, and other advanced electronic devices. A series of semiladder polymers by copolymerization of weak acceptors (TPTQ or TPTI) and weak donors (fluorene (F) or carbazole (C)) have been developed for luminescent and charge transporting properties. It was found that enhanced planarity, high crystallinity, and a delicate balance in interchain aggregation obtained in the new copolymer, TPTQ-F, contributed to high ambipolar charge mobilities and photoluminescent quantum yield. TPTQ-F showed excellent performance in solution-processed multilayered OLET devices with an external quantum efficiency (EQE) of 5.3%.
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Affiliation(s)
- Dafei Yuan
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Mohammad A Awais
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Valerii Sharapov
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Xunshan Liu
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Andriy Neshchadin
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Wei Chen
- Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, 9700 Cass Avenue, Lemont, Illinois 60439, United States
| | - Luping Yu
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
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Chen H, Huang W, Marks TJ, Facchetti A, Meng H. Recent Advances in Multi-Layer Light-Emitting Heterostructure Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007661. [PMID: 33660408 DOI: 10.1002/smll.202007661] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2020] [Revised: 01/21/2021] [Indexed: 06/12/2023]
Abstract
Light-emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple-layer heterostructures in the charge-carrying/light-emitting LET channel versus the best-reported performance in single active layer LETs, rendering multi-layer LETs promising candidates for next-generation display technologies. In this review, the fundamental structures and working principles of multi-layer heterostructure LETs are introduced. Next, developments in multi-layer LETs are discussed based on co-planar LETs, non-planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.
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Affiliation(s)
- Hongming Chen
- School of Advanced Materials, Peking University Shenzhen Graduate School, 2199 Lishui Road, Shenzhen, 518055, P. R. China
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Flexterra Corporation, 8025 Lamon Avenue, Skokie, IL, 60077, USA
| | - Hong Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, 2199 Lishui Road, Shenzhen, 518055, P. R. China
- School of Electronics and Information, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, P. R. China
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Acar G, Iqbal MJ, Chaudhry MU. Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers. MATERIALS 2021; 14:ma14040901. [PMID: 33672810 PMCID: PMC7917658 DOI: 10.3390/ma14040901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/25/2020] [Revised: 02/03/2021] [Accepted: 02/07/2021] [Indexed: 11/25/2022]
Abstract
Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.
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Affiliation(s)
- Gizem Acar
- Faculty of Engineering and Natural Sciences, Sabanci University, Istanbul 34956, Turkey;
- Department of Engineering, Durham University, South Rd, Durham DH13LE, UK
| | - Muhammad Javaid Iqbal
- Centre of Excellence in Solid State Physics, University of the Punjab, Lahore 54590, Pakistan;
| | - Mujeeb Ullah Chaudhry
- Department of Engineering, Durham University, South Rd, Durham DH13LE, UK
- Correspondence:
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Chen H, Shi M, Liu M, Xing X, Zhao C, Miao J, Ali MU, Facchetti A, Meng H. Host-Free Deep-Blue Organic Light-Emitting Transistors Based on a Novel Fluorescent Emitter. ACS APPLIED MATERIALS & INTERFACES 2020; 12:40558-40565. [PMID: 32815711 DOI: 10.1021/acsami.0c08721] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organic light-emitting transistors (OLETs), with the capability of simultaneously functioning as a light-emitting stack and a thin-film transistor, have received considerable attention for potential applications in active-matrix flat-panel displays. Here, we demonstrate host-free deep-blue OLETs based on a novel small-molecule fluorescent emitter, 10,10'-bis(4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)-10H,10'H-9,9'-spirobi[acridine] (SPA-PBI), and a high-k dielectric, cross-linked poly(vinyl alcohol) (PVA) polymer. The deep-blue OLETs based on 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) as an electron-transport layer showed an extraordinarily high hole mobility of 4.6 cm2 V-1 s-1, a brightness of 570 cd m-2 under a low gate and source-drain voltages of -24 V, and an external quantum efficiency (EQE) of 0.87% at 100 cd m-2. Besides, an electroluminescence peak was observed to be at 432 nm and the corresponding CIE coordinates were as deep as (0.16, 0.08). By replacing TPBi with TmPyPB as the electron-transport layer (ETL), the electron transport and hole blocking capability were greatly improved, which led to ∼60% enhancement of the EQE (1.39% at 100 cd m-2). These results suggest that using a highly twisted double-donor-acceptor emitter with rationally optimized charge injection could lead to highly efficient deep-blue OLETs.
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Affiliation(s)
- Hongming Chen
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Ming Shi
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Ming Liu
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Xing Xing
- Research & Development Institute of Northwest Polytechnical University (Shenzhen), Northwestern Polytechnical University, Shenzhen 518057, P. R. China
| | - Changbin Zhao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Jingsheng Miao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
| | - Muhammad Umair Ali
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, P. R. China
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Flexterra Corporation, 8025 Lamon Avenue, Skokie, Illinois 60077, United States
| | - Hong Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
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Chaudhry MU, Tetzner K, Lin YH, Nam S, Pearson C, Groves C, Petty MC, Anthopoulos TD, Bradley DDC. Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:18445-18449. [PMID: 29767502 DOI: 10.1021/acsami.8b06031] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.
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Affiliation(s)
| | - Kornelius Tetzner
- Blackett Laboratory, Department of Physics and Centre for Plastic Electronics , Imperial College London , London SW7 2AZ , United Kingdom
| | - Yen-Hung Lin
- Department of Physics , University of Oxford , Oxford OX1 3PU , United Kingdom
| | - Sungho Nam
- Department of Physics , University of Oxford , Oxford OX1 3PU , United Kingdom
| | - Christopher Pearson
- Department of Engineering , Durham University , Durham DH1 3LE , United Kingdom
| | - Chris Groves
- Department of Engineering , Durham University , Durham DH1 3LE , United Kingdom
| | - Michael C Petty
- Department of Engineering , Durham University , Durham DH1 3LE , United Kingdom
| | - Thomas D Anthopoulos
- Blackett Laboratory, Department of Physics and Centre for Plastic Electronics , Imperial College London , London SW7 2AZ , United Kingdom
- Physical Science and Engineering Division , King Abdullah University of Science and Technology , Thuwal 23955 , Saudi Arabia
| | - Donal D C Bradley
- Department of Physics , University of Oxford , Oxford OX1 3PU , United Kingdom
- Department of Engineering Science , University of Oxford , Oxford OX1 3PJ , United Kingdom
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7
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Song L, Hu Y, Liu Z, Lv Y, Guo X, Liu X. Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:2711-2719. [PMID: 28029040 DOI: 10.1021/acsami.6b13405] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.
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Affiliation(s)
- Li Song
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Yongsheng Hu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
| | - Zheqin Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
| | - Ying Lv
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
| | - Xiaoyang Guo
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
| | - Xingyuan Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
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8
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Effect of thermal annealing Super Yellow emissive layer on efficiency of OLEDs. Sci Rep 2017; 7:40805. [PMID: 28106082 PMCID: PMC5247766 DOI: 10.1038/srep40805] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2016] [Accepted: 12/12/2016] [Indexed: 11/24/2022] Open
Abstract
Thermal annealing of the emissive layer of an organic light emitting diode (OLED) is a common practice for solution processable emissive layers and reported annealing temperatures varies across a wide range of temperatures. We have investigated the influence of thermal annealing of the emissive layer at different temperatures on the performance of OLEDs. Solution processed polymer Super Yellow emissive layers were annealed at different temperatures and their performances were compared against OLEDs with a non-annealed emissive layer. We found a significant difference in the efficiency of OLEDs with different annealing temperatures. The external quantum efficiency (EQE) reached a maximum of 4.09% with the emissive layer annealed at 50 °C. The EQE dropped by ~35% (to 2.72%) for OLEDs with the emissive layers annealed at 200 °C. The observed performances of OLEDs were found to be closely related to thermal properties of polymer Super Yellow. The results reported here provide an important guideline for processing emissive layers and are significant for OLED and other organic electronics research communities.
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Vertical Microcavity Organic Light-emitting Field-effect Transistors. Sci Rep 2016; 6:23210. [PMID: 26986944 PMCID: PMC4794712 DOI: 10.1038/srep23210] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2016] [Accepted: 03/02/2016] [Indexed: 11/08/2022] Open
Abstract
Organic light-emitting field-effect transistors (OLEFETs) are regarded as a novel kind of device architecture for fulfilling electrical-pumped organic lasers. However, the realization of OLEFETs with high external quantum efficiency (EQE) and high brightness simultaneously is still a tough task. Moreover, the design of the resonator structure in LED is far from satisfactory. Here, OLEFETs with EQE of 1.5% at the brightness of 2600 cdm(-2), and the corresponding ON/OFF ratio and current efficiency reaches above 10(4) and 3.1 cdA(-1), respectively, were achieved by introducing 1,4,5,8,9,12-hexaazatriphenylene-hexacarbonitrile (HAT-CN) as a charge generation layer. Moreover, a vertical microcavity based on distributed Bragg reflector (DBR) and Ag source/drain electrodes is successfully introduced into the high performance OLEFETs, which results in electroluminescent spectrum linewidth narrowing from 96 nm to 6.9 nm. The results manifest the superiority of the vertical microcavity as an optical resonator in OLEFETs, which sheds some light on achieving the electrically pumped organic lasers.
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Muhieddine K, Ullah M, Maasoumi F, Burn PL, Namdas EB. Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:6677-6682. [PMID: 26400042 DOI: 10.1002/adma.201502554] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2015] [Revised: 07/23/2015] [Indexed: 06/05/2023]
Abstract
Area emission is realized in all-solution-processed hybrid light-emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.
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Affiliation(s)
- Khalid Muhieddine
- Centre for Organic Photonics & Electronics, The University of Queensland, St Lucia, QLD 4072, Australia
| | - Mujeeb Ullah
- Centre for Organic Photonics & Electronics, The University of Queensland, St Lucia, QLD 4072, Australia
| | - Fatemeh Maasoumi
- Centre for Organic Photonics & Electronics, The University of Queensland, St Lucia, QLD 4072, Australia
| | - Paul L Burn
- Centre for Organic Photonics & Electronics, The University of Queensland, St Lucia, QLD 4072, Australia
| | - Ebinazar B Namdas
- Centre for Organic Photonics & Electronics, The University of Queensland, St Lucia, QLD 4072, Australia
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Liu Z, Zhang G, Zhang D. Molecular Materials That Can Both Emit Light and Conduct Charges: Strategies and Perspectives. Chemistry 2015; 22:462-71. [DOI: 10.1002/chem.201503038] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2015] [Indexed: 12/12/2022]
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Li Q, Li Z. The utilization of post-synthetic modification in opto-electronic polymers: an effective complementary approach but not a competitive one to the traditional direct polymerization process. Polym Chem 2015. [DOI: 10.1039/c5py01158b] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
By presenting some typical examples, the recent progress of opto-electronic polymers is reviewed, which were only accessible from the post-synthetic modification strategy.
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Affiliation(s)
- Qianqian Li
- Department of Chemistry
- Wuhan University
- Wuhan 430072
- China
| | - Zhen Li
- Department of Chemistry
- Wuhan University
- Wuhan 430072
- China
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