New insights into the diverse electronic phases of a novel vanadium dioxide polymorph: a terahertz spectroscopy study

Highly Tunable MOCVD Process of Vanadium Dioxide Thin Films: Relationship between Structural/Morphological Features and Electrodynamic Properties

The monoclinic structures of vanadium dioxide are widely studied as appealing systems due to a plethora of functional properties in several technological fields. In particular, the possibility to obtain the VO2 material in the form of thin film with a high control of structure and morphology represents a key issue for their use in THz devices and sensors. Herein, a fine control of the crystal habit has been addressed through an in-depth study of the metal organic chemical vapor deposition (MOCVD) synthetic approach. The focus is devoted to the key operative parameters such as deposition temperature inside the reactor in order to stabilize the P21/c or the C2/m monoclinic VO2 structures. Furthermore, the compositional purity, the morphology and the thickness of the VO2 films have been assessed through energy dispersive X-ray (EDX) analyses and field-emission scanning electron microscopy (FE-SEM), respectively. THz time domain spectroscopy is used to validate at very high frequency the functional properties of the as-prepared VO2 films.

Giant photon momentum locked THz emission in a centrosymmetric Dirac semimetal

Strong second-order optical nonlinearities often require broken material centrosymmetry, thereby limiting the type and quality of materials used for nonlinear optical devices. Here, we report a giant and highly tunable terahertz (THz) emission from thin polycrystalline films of the centrosymmetric Dirac semimetal PtSe₂. Our PtSe₂ THz emission is turned on at oblique incidence and locked to the photon momentum of the incident pump beam. Notably, we find an emitted THz efficiency that is giant: It is two orders of magnitude larger than the standard THz-generating nonlinear crystal ZnTe and has values approaching that of the noncentrosymmetric topological material TaAs. Further, PtSe₂ THz emission displays THz sign and amplitude that is controlled by the incident pump polarization and helicity state even as optical absorption is only weakly polarization dependent and helicity independent. Our work demonstrates how photon drag can activate pronounced optical nonlinearities that are available even in centrosymmetric Dirac materials.

Insights into first-principles characterization of the monoclinic VO2(B) polymorph via DFT + U calculation: electronic, magnetic and optical properties

We have studied the structural, electronic, magnetic, and optical properties of the VO2(B) polymorph using first-principles calculations based on density functional theory (DFT). This polymorph was found to display four optimized structures namely VO2(B)PP, VO2(B)LP, VO2(B)PPD, and VO2(B)LPD using the generalized gradient approximation (GGA) PBE exchange-correlation functional by including/excluding van der Waals interaction. Our derivation provides a theoretical justification for adding an on-site Coulomb U value in the conventional DFT calculations to allow a direct comparison of the two methods. We predicted a zero bandgap of the VO2(B) structure based on GGA/PBE. However, by GGA/PBE + U, we found accurate bandgap values of 0.76, 0.66, and 0.70 eV for VO2(B)PP, VO2(B)LP, and VO2(B)PPD, respectively. The results obtained from DFT + U were accompanied by a structural transition from the metallic to semiconductor property. Here, we verified the non-magnetic characteristic of the monoclinic VO2(B) phase with some available experimental and theoretical data. However, the debate on the magnetic property of this polymorph remains unresolved. Imaginary and real parts of the dielectric function, as computed with the GGA/PBE functional and the GGA/PBE + U functional, were also reported. The first absorption peaks of all considered geometries in the imaginary part of the dielectric constants indicated that the VO2(B) structure could perfectly absorb infrared light. The computed static dielectric constants with positive values, as derived from the optical properties, confirmed the conductivity of this material. Among the four proposed geometries of VO2(B) in this study, the outcomes obtained by VO2(B)PPD reveal good results owing to the excellent consistency of its bandgap, magnetic and optical properties with other experimental and theoretical observations. The theoretical framework in our study will provide useful insight for future practical applications of the VO2(B) polymorph in electronics and optoelectronics.

Terahertz spectroscopic evidence of electron correlations in SrVO3epitaxial thin films

Electron correlation in transition metal oxides (TMOs) is an intriguing topic in condensed matter physics, revealing a wide variety of exotic physical properties. Investigating low-energy carrier dynamics by terahertz (THz) spectroscopy is an efficient route to obtain the essential insights into electron correlation. In the present study, THz-time-domain spectroscopy is employed to probe electron correlation in SrVO₃epitaxial thin films. The low energy carrier dynamics of SrVO₃in the range of 0.2-6.0 meV shows a typical metallic behavior as overserved in dc transport measurements. The obtained temperature-dependent optical parameters provide evidence of mass renormalization in the low energy regime and carrier momentum relaxation happens via the electron-electron scattering mechanism. Overall, the frequency and temperature-dependent optical parameters indicate the Fermi liquid ground state in a Mott-Hubbard type correlated metal SrVO₃thin film. Our results provide significant insight on low energy carrier dynamics in the correlated electron system, particularly perovskite-basedd¹TMOs.

Synthesis of Monoclinic Vanadium Dioxide via One-Pot Hydrothermal Route

Pure monoclinic vanadium dioxide nanoparticles (VO2 NPs) with a controlled uniform size are considered essential for the preparation of thermochromic smart window coatings on desired substrates. Herein, we report a facile one-step hydrothermal synthesis of VO2(M) NPs without post-treatment of annealing, which may induce unwanted aggregation of NPs. In contrast with the annealed sample, the one-step processed VO2(M) NPs exhibit superior thermochromic performance with the solar modulation efficiency of 11.8% and luminous transmittance of 37.3%.

Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film

The reversible and multi-stimuli responsive insulator-metal transition of VO2, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO2 films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO2 as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO2. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO2 component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports "quasi-simultaneous" IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO2 film and VO2 hybrid metamaterials is surveyed, highlighting that VO2 can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO2-based tuneable THz devices are discussed.

Digital- to Analog-Type Terahertz Modulation Controlled by Mosaicity of the Substrate Template in Rare-Earth Nickelate Thin Films

The extreme sensitivity of the metal-insulator (M-I) transition in RNiO₃ (R = rare-earth ion) nickelates to various extrinsic and intrinsic factors rely on mechanisms driving structure-property relations. Here, we demonstrate a unique way to control the M-I transition of epitaxial Pr_0.5Sm_0.5NiO₃ thin films using a mosaic template of the LaAlO₃(100) substrate; two sets of epitaxial films were deposited on highly oriented crystals and mosaic (with multiple crystallites) crystals. While the former films exhibit a robust and sharp M-I transition, the films on the mosaic substrate show distinctively much more subtle and broad transition, albeit same factors suggesting compositional purity. Terahertz (THz) dynamic conductivity too behaves very differently for the two types of films; Drude dynamics dominate the conductivity of highly crystalline films, whereas disorder-driven Drude-Smith conductivity prevails in mosaic films. Using this mosaic structure-controlled M-I transition and conductivity dynamics, we propose to implement these two templates of films for digital and analog THz transmission amplitude modulators.

Metamaterials based on the phase transition of VO2

In this article, we present a comprehensive review on recent research progress in design and fabrication of active tunable metamaterials and devices based on phase transition of VO₂. Firstly, we introduce mechanisms of the metal-to-insulator phase transition (MIPT) in VO₂ investigated by ultrafast THz spectroscopies. By analyzing the THz spectra, the evolutions of MIPT in VO₂ induced by different external excitations are described. The superiorities of using VO₂ as building blocks to construct highly tunable metamaterials are discussed. Subsequently, the recently demonstrated metamaterial devices based on VO₂ are reviewed. These metamaterials devices are summarized and described in the categories of working frequency. In each working frequency range, representative metamaterials based on VO₂ with different architectures and functionalities are reviewed and the contributions of the MIPT of VO₂ are emphasized. Finally, we conclude the recent reports and provide a prospect on the strategies of developing future tunable metamaterials based on VO₂.

Epitaxial strain driven crossover from Drude to Drude-Smith terahertz conductivity dynamics in LaNiO3 thin films

We investigate the hetero-epitaxial strain driven low-energy charge dynamics in compressive and tensile strained LaNiO₃ thin films employing terahertz (THz) time-domain spectroscopy. The complex THz conductivity exhibits a crossover from Drude type metallic behavior for the compressive film to a Drude-Smith type disordered behavior for the tensile film. This demonstration of strain driven crossover in THz conductivity dynamics, while the two films have qualitatively similar dc conductivities, (i) brings out the potential of THz technology in distinguishing between similar dc electronic phases and (ii) suggests that LaNiO₃ under compressive strain is a better candidate for applications as electrodes in oxides electronics.

Cation disorder and epitaxial strain modulated Drude-Smith type terahertz conductivity and Hall-carrier switching in Ca1-x Ce x RuO3 thin films

The CaRuO₃ is a non-Fermi liquid pseudo-cubic perovskite with a magnetic ground state on the verge of phase transition and it lies in the vicinity of the quantum critical point. To understand the sensitivity of its ground state, the effects of subtle aliovalent chemical disorder on the static and high frequency dynamic conductivity in the coherently strained structures were explored. The Ce-doped Ca_1-x Ce _x RuO₃ (0  ⩽  x  ⩽  0.1) thin films were deposited on LaAlO₃ (1 0 0) and SrTiO₃ (1 0 0) substrates and studies for low-energy terahertz (THz) carrier dynamics, dc transport and Hall effect. These compositions exhibited a very effective and unusual Hall-carrier switching in both compressive and tensile strain induced epitaxial thin films. The dc resistivity depicts a switching from a non-Fermi liquid to a Fermi liquid behavior without any magnetic phase transition. A discernible and gradual crossover from Drude to Drude-Smith THz dynamic optical conductivity was observed while traversing from pure to 10% Ce-doped CaRuO₃ films. Overall, a nearly Fermi liquid behavior, effective carrier switching and unusual features in THz conductivity, were all novel features realized for the first time in physically and/or chemically modified CaRuO₃. These new phases highlight the novel subtleties and versatility of the systems lying near the quantum critical point.

Evidence for Photoinduced Insulator-to-Metal transition in B-phase vanadium dioxide

Ultrafast optical studies have been performed on epitaxial films of the novel B-phase of vanadium dioxide using temperature-dependent optical pump-probe technique. Signature of temperature-driven metal-to-insulator transition was distinctly observed in the ultrafast dynamics - the insulating phase showed two characteristic electronic relaxation times while the metallic phase showed only one. Beyond a threshold value of the pump fluence, the insulating state collapses into a 'metallic-like' phase which can be further subdivided into two regimes according to the lengths of the fast characteristic time. The first regime can be explained by lattice heating due to the optical pump; the other cannot be accounted by simple lattice heating effects alone, and thus offers evidence for a true photoinduced phase transition.

Ultrafast Mid-Infrared Nanoscopy of Strained Vanadium Dioxide Nanobeams

Long regarded as a model system for studying insulator-to-metal phase transitions, the correlated electron material vanadium dioxide (VO2) is now finding novel uses in device applications. Two of its most appealing aspects are its accessible transition temperature (∼341 K) and its rich phase diagram. Strain can be used to selectively stabilize different VO2 insulating phases by tuning the competition between electron and lattice degrees of freedom. It can even break the mesoscopic spatial symmetry of the transition, leading to a quasiperiodic ordering of insulating and metallic nanodomains. Nanostructuring of strained VO2 could potentially yield unique components for future devices. However, the most spectacular property of VO2--its ultrafast transition--has not yet been studied on the length scale of its phase heterogeneity. Here, we use ultrafast near-field microscopy in the mid-infrared to study individual, strained VO2 nanobeams on the 10 nm scale. We reveal a previously unseen correlation between the local steady-state switching susceptibility and the local ultrafast response to below-threshold photoexcitation. These results suggest that it may be possible to tailor the local photoresponse of VO2 using strain and thereby realize new types of ultrafast nano-optical devices.