Unravelling the origin of the giant Zn deficiency in wurtzite type ZnO nanoparticles

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications

A novel method of oxide semiconductor nanoparticle synthesis is proposed based on high-voltage, high-current electrical switching discharge (HVHC-ESD). Through a subsecond discharge in the HVHC-ESD method, we successfully synthesized zinc oxide (ZnO) nanorods. Crystallography and optical and electrical analyses approve the high crystal-quality and outstanding optoelectronic characteristics of our synthesized ZnO. The HVHC-ESD method enables the synthesis of ZnO nanorods with ultraviolet (UV) and visible emissions. To demonstrate the effectiveness of our prepared materials, we also fabricated two UV photodetectors based on the ZnO nanorods synthesized using the subsecond HVHC-ESD method. The UV-photodetector test under dark and UV light irradiation also had a promising result with a linear ohmic current-voltage output. In addition to the HVHC-ESD method's excellent tunability for ZnO properties, this method enables the rapid synthesis of ZnO nanorods in open air and water. The results demonstrate the preparation, highlight the synthesis of fine hexagonal-shaped nanorods under a second with controlled oxygen vacancies, and point defects for a wide range of applications in less than a second.

Impact of Nanostructuration on the Chemical Composition of Nickel Oxide Nanoparticles

Reduction of the size of a particle down to a few tens of nanometers or below may drastically affect its physical properties. That is well-known for quantum dots. Conversely, many works consider the chemical composition of nanoparticles as invariant upon reduction of their dimension. Here we demonstrate that the chemical composition of a transition-metal oxide, namely, nickel oxide, is drastically affected by its nanostructuration.

Defect evolution in ZnO and its effect on radiation tolerance

The origin of ZnO radiation resistance is fascinating but still unclear. Herein, we found that radiation tolerance of ZnO can be tuned by engineering intrinsic defects into the ZnO. The role played by native defects in the radiation tolerance of ZnO was systematically explored by carrying out N+ implantation on a set of home-grown ZnO nanocrystals with various lattice defect types and concentrations. Interestingly, decreasing the VO and Zni concentration significantly aggravated N+ radiation damage, indicating the presence of O-deficient defects to be the potential cause of the radiation hardness of ZnO. A similar phenomenon was also observed for H+-implanted ZnO. This work offers a new way to manipulate ZnO and endow it with desired physicochemical properties, and is expected to pave the way for its application in radiative environments.

Defect induced p-type conductivity in zinc oxide at high temperature: electron paramagnetic resonance spectroscopy

High-temperature electron paramagnetic resonance (EPR) measurements were applied to a ZnO nanocrystalline (50 nm) sample, synthesized via a solid co-precipitation method, in order to understand the behavior of intrinsic defect centers at high temperatures. It has been observed that the defect centers on the surface play a crucial role in the conductivity behavior of ZnO. Above 300 °C only surface defects can be visible in EPR spectra for ZnO nanocrystals which indicate p-type conductivity.