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Anzellini S, Diaz-Anichtchenko D, Sanchez-Martin J, Turnbull R, Radescu S, Mujica A, Muñoz A, Ferrari S, Pampillo L, Bilovol V, Popescu C, Errandonea D. High-Pressure Behavior of Ca 2SnO 4, Sr 2SnO 4, and Zn 2SnO 4. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:1357-1367. [PMID: 38293689 PMCID: PMC10823467 DOI: 10.1021/acs.jpcc.3c06726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 12/12/2023] [Accepted: 01/01/2024] [Indexed: 02/01/2024]
Abstract
The pressure-induced structural evolution of Ca2SnO4, Sr2SnO4, and Zn2SnO4 has been characterized by powder X-ray diffraction up to 20 GPa using the ALBA synchrotron radiation source and density functional theory calculations. No phase transition was observed in Ca2SnO4 and Zn2SnO4 in the investigated pressure range. The observation in Zn2SnO4 solves contradictions existing in the literature. In contrast, a phase transition was observed in Sr2SnO4 at a pressure of 9.09 GPa. The transition was characterized as from the ambient-condition tetragonal polymorph (space group I4/mmm) to the low-temperature tetragonal polymorph (space group P42/ncm). The linear compressibility of crystallographic axes and room-temperature pressure-volume equation of state are reported for the three compounds studied. Calculated elastic constants and moduli are also reported as well as a systematic discussion of the high-pressure behavior and bulk modulus of M2SnO4 stannates.
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Affiliation(s)
- Simone Anzellini
- Departamento
de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, Carrer del Dr.
Moliner 50, 46100 Burjassot, Valencia, Spain
| | - Daniel Diaz-Anichtchenko
- Departamento
de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, Carrer del Dr.
Moliner 50, 46100 Burjassot, Valencia, Spain
| | - Josu Sanchez-Martin
- Departamento
de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, Carrer del Dr.
Moliner 50, 46100 Burjassot, Valencia, Spain
| | - Robin Turnbull
- Departamento
de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, Carrer del Dr.
Moliner 50, 46100 Burjassot, Valencia, Spain
| | - Silvana Radescu
- Departamento
de Física, MALTA-Consolider Team, Instituto de Materiales y Nanotecnología, Universidad de La
Laguna, San Cristóbal de La Laguna, E-38200 Tenerife, Spain
| | - Andres Mujica
- Departamento
de Física, MALTA-Consolider Team, Instituto de Materiales y Nanotecnología, Universidad de La
Laguna, San Cristóbal de La Laguna, E-38200 Tenerife, Spain
| | - Alfonso Muñoz
- Departamento
de Física, MALTA-Consolider Team, Instituto de Materiales y Nanotecnología, Universidad de La
Laguna, San Cristóbal de La Laguna, E-38200 Tenerife, Spain
| | - Sergio Ferrari
- Facultad
de Ingeniería, Departamento de Física, Laboratorio de
Sólidos Amorfos, Universidad de Buenos
Aires, Av. Paseo Colón 850, C1063ACV Buenos Aires, Argentina
- CONICET—Universidad
de Buenos Aires, Instituto de Tecnologías y Ciencias de la
Ingeniería “Hilario Fernández Long” (INTECIN), Av. Paseo Colón 850, C1063ACV Buenos Aires, Argentina
| | - Laura Pampillo
- Facultad
de Ingeniería, Departamento de Física, Laboratorio de
Sólidos Amorfos, Universidad de Buenos
Aires, Av. Paseo Colón 850, C1063ACV Buenos Aires, Argentina
- CONICET—Universidad
de Buenos Aires, Instituto de Tecnologías y Ciencias de la
Ingeniería “Hilario Fernández Long” (INTECIN), Av. Paseo Colón 850, C1063ACV Buenos Aires, Argentina
| | - Vitaliy Bilovol
- Facultad
de Ingeniería, Departamento de Física, Laboratorio de
Sólidos Amorfos, Universidad de Buenos
Aires, Av. Paseo Colón 850, C1063ACV Buenos Aires, Argentina
- Academic
Centre for Materials and Nanotechnology, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow, Poland
| | - Catalin Popescu
- CELLS-ALBA
Synchrotron Light Facility, Cerdanyola 08290, Barcelona, Spain
| | - Daniel Errandonea
- Departamento
de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, Carrer del Dr.
Moliner 50, 46100 Burjassot, Valencia, Spain
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Liu H, Wang J, Zhang G, Han Y, Wu B, Gao C. Pressure effects on the metallization and dielectric properties of GaP. Phys Chem Chem Phys 2021; 23:26829-26836. [PMID: 34817490 DOI: 10.1039/d1cp03889c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up to 30.2 GPa) on the metallization and dielectric properties of GaP. It is found that the carrier transport process changes from mixed grain and grain boundary conduction to pure grain conduction at 5.8 GPa, and due to pressure-induced structural phase transition, the resistance drops drastically by three orders of magnitude at 25.5 GPa. Temperature dependence of resistivity measurements and band structure calculations suggest the occurrence of a semiconductor-metal transition. Combining differential charge density and dielectric analysis, it is observed that the electron localization is weakened, which leads to increased polarization and larger relative permittivity in the zb structure. After the phase transition, both the polarization and the relative permittivity decrease. Pressure increases the complex dielectric constant and dielectric loss factor, due to the increase in relaxation polarization and the scattering effect of carriers. Moreover, by comparing the high-pressure behavior of GaP, GaAs and GaSb, the changes in the electronic structure and electric transport process caused by the phase transition can be understood, which can enable us to better understand the metallization behavior and dielectric properties of Ga-based III-V family semiconductors under pressure, and stimulate the design and modification of other related group III-V semiconductors for optoelectronic devices and sensors.
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Affiliation(s)
- Hao Liu
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002, China.
| | - Jia Wang
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University, Changchun 130052, China
| | - Guozhao Zhang
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Shandong Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China
| | - Yonghao Han
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China.
| | - Baojia Wu
- Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002, China.
| | - Chunxiao Gao
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China.
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Das P, Devi PS, Blom DA, Vogt T, Lee Y. High-Pressure Phase Transitions of Morphologically Distinct Zn 2SnO 4 Nanostructures. ACS OMEGA 2019; 4:10539-10547. [PMID: 31460152 PMCID: PMC6649287 DOI: 10.1021/acsomega.9b01361] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/11/2019] [Accepted: 06/06/2019] [Indexed: 06/10/2023]
Abstract
Many aspects of nanostructured materials at high pressures are still unexplored. We present here, high-pressure structural behavior of two Zn2SnO4 nanomaterials with inverse spinel type, one a particle with size of ∼7 nm [zero dimensional (0-D)] and the other with a chain-like [one dimensional (1-D)] morphology. We performed in situ micro-Raman and synchrotron X-ray diffraction measurements and observed that the cation disordering of the 0-D nanoparticle is preserved up to ∼40 GPa, suppressing the reported martensitic phase transformation. On the other hand, an irreversible phase transition is observed from the 1-D nanomaterial into a new and dense high-pressure orthorhombic CaFe2O4-type structure at ∼40 GPa. The pressure-treated 0-D and 1-D nanomaterials have distinct diffuse reflectance and emission properties. In particular, a heterojunction between the inverse spinel and quenchable orthorhombic phases allows the use of 1-D Zn2SnO4 nanomaterials as efficient photocatalysts as shown by the degradation of the textile pollutant methylene blue.
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Affiliation(s)
- Partha
Pratim Das
- Department
of Earth System Sciences, Yonsei University, Seoul 120749, Korea
| | - P. Sujatha Devi
- Sensor
and Actuator Division, CSIR-Central Glass
and Ceramic Research Institute, Kolkata 700032, India
| | - Douglas A. Blom
- NanoCenter & Department of Chemical
Engineering,
and NanoCenter &
Department of Chemistry & Biochemistry, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Thomas Vogt
- NanoCenter & Department of Chemical
Engineering,
and NanoCenter &
Department of Chemistry & Biochemistry, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Yongjae Lee
- Department
of Earth System Sciences, Yonsei University, Seoul 120749, Korea
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
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Metallization and Electrical Transport Behaviors of GaSb under High-Pressure. Sci Rep 2017; 7:2656. [PMID: 28572598 PMCID: PMC5453998 DOI: 10.1038/s41598-017-02592-5] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2016] [Accepted: 04/13/2017] [Indexed: 11/08/2022] Open
Abstract
The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and first-principles calculations. The temperature-dependent resistivity measurements revealed pressure-induced metallization of GaSb at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m to Imma. In addition, the activation energies for the conductivity and Hall effect measurements indicated that GaSb undergoes a carrier-type inversion (p-type to n-type) at approximately 4.5 GPa before metallization. The first-principles calculations also revealed that GaSb undergoes a phase transition from F-43m to Imma at 7.0 GPa and explained the carrier-type inversion at approximately 4.5 GPa. Finally, transmission electron microscopy analysis revealed the effect of the interface on the electrical transport behavior of a small-resistance GaSb sample and explained the discontinuous change of resistivity after metallization. Under high pressure, GaSb undergoes grain refinement, the number of interfaces increases, and carrier transport becomes more difficult, increasing the electrical resistivity.
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