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Pitters J, Croshaw J, Achal R, Livadaru L, Ng S, Lupoiu R, Chutora T, Huff T, Walus K, Wolkow RA. Atomically Precise Manufacturing of Silicon Electronics. ACS NANO 2024; 18:6766-6816. [PMID: 38376086 PMCID: PMC10919096 DOI: 10.1021/acsnano.3c10412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 02/01/2024] [Accepted: 02/06/2024] [Indexed: 02/21/2024]
Abstract
Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products. It has been developed most successfully using scanning probe methods and has received particular attention for developing atom scale electronics with a focus on silicon-based systems. This review captures the development of silicon atom-based electronics and is divided into several sections that will cover characterization and atom manipulation of silicon surfaces with scanning tunneling microscopy and atomic force microscopy, development of silicon dangling bonds as atomic quantum dots, creation of atom scale devices, and the wiring and packaging of those circuits. The review will also cover the advance of silicon dangling bond logic design and the progress of silicon quantum atomic designer (SiQAD) simulators. Finally, an outlook of APM and silicon atom electronics will be provided.
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Affiliation(s)
- Jason Pitters
- Nanotechnology
Research Centre, National Research Council
of Canada, Edmonton, Alberta T6G 2M9, Canada
| | - Jeremiah Croshaw
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
| | - Roshan Achal
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
- Quantum
Silicon Inc., Edmonton, Alberta T6G 2M9, Canada
| | - Lucian Livadaru
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
- Quantum
Silicon Inc., Edmonton, Alberta T6G 2M9, Canada
| | - Samuel Ng
- Department
of Electrical and Computer Engineering, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Robert Lupoiu
- School
of Engineering, Stanford University, Stanford, California 94305, United States
| | - Taras Chutora
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
| | - Taleana Huff
- Canadian
Bank Note Company, Ottawa, Ontario K1Z 1A1, Canada
| | - Konrad Walus
- Department
of Electrical and Computer Engineering, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Robert A. Wolkow
- Department
of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada
- Quantum
Silicon Inc., Edmonton, Alberta T6G 2M9, Canada
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2
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Liu XR, Deng H, Liu Y, Yin Z, Chen C, Zhu YP, Yang Y, Jiang Z, Liu Z, Ye M, Shen D, Yin JX, Wang K, Liu Q, Zhao Y, Liu C. Spectroscopic signature of obstructed surface states in SrIn 2P 2. Nat Commun 2023; 14:2905. [PMID: 37217499 DOI: 10.1038/s41467-023-38589-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Accepted: 05/09/2023] [Indexed: 05/24/2023] Open
Abstract
The century-long development of surface sciences has witnessed the discoveries of a variety of quantum states. In the recently proposed "obstructed atomic insulators", symmetric charges are pinned at virtual sites where no real atoms reside. The cleavage through these sites could lead to a set of obstructed surface states with partial electronic occupation. Here, utilizing scanning tunneling microscopy, angle-resolved photoemission spectroscopy and first-principles calculations, we observe spectroscopic signature of obstructed surface states in SrIn2P2. We find that a pair of surface states that are originated from the pristine obstructed surface states split in energy by a unique surface reconstruction. The upper branch is marked with a striking differential conductance peak followed by negative differential conductance, signaling its localized nature, while the lower branch is found to be highly dispersive. This pair of surface states is in consistency with our calculational results. Our finding not only demonstrates a surface quantum state induced by a new type of bulk-boundary correspondence, but also provides a platform for exploring efficient catalysts and related surface engineering.
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Affiliation(s)
- Xiang-Rui Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China
- International Quantum Academy, 518048, Shenzhen, Guangdong, China
| | - Hanbin Deng
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China
- International Quantum Academy, 518048, Shenzhen, Guangdong, China
| | - Yuntian Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China
- International Quantum Academy, 518048, Shenzhen, Guangdong, China
| | - Zhouyi Yin
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China
| | - Congrun Chen
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China
| | - Yu-Peng Zhu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China
- International Quantum Academy, 518048, Shenzhen, Guangdong, China
| | - Yichen Yang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Zhicheng Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Zhengtai Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Mao Ye
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Dawei Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Jia-Xin Yin
- Department of Physics, Princeton University, Princeton, New Jersey, 08544, USA
| | - Kedong Wang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China
| | - Qihang Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China.
- International Quantum Academy, 518048, Shenzhen, Guangdong, China.
- Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, 518055, Shenzhen, Guangdong, China.
| | - Yue Zhao
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China.
- International Quantum Academy, 518048, Shenzhen, Guangdong, China.
| | - Chang Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China.
- International Quantum Academy, 518048, Shenzhen, Guangdong, China.
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3
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Shaterzadeh-Yazdi Z, Sanders BC, DiLabio GA. Ab initio characterization of coupling strength for all types of dangling-bond pairs on the hydrogen-terminated Si(100)-2 × 1 surface. J Chem Phys 2018; 148:154701. [PMID: 29679977 DOI: 10.1063/1.5020873] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The results demonstrate that simple models for approximating tunneling, such as the Wentzel-Kramer-Brillouin method, which do not incorporate the details of surface structure, are incapable of providing reasonable estimates of tunneling rates between dangling bonds. The results provide guidance to efforts related to the development of dangling-bond based computing elements.
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Affiliation(s)
- Zahra Shaterzadeh-Yazdi
- School of Engineering Science, College of Engineering, University of Tehran, 16th Azar Street, Enghelab Square, Tehran, Iran
| | - Barry C Sanders
- Institute for Quantum Science and Technology, University of Calgary, Calgary, Alberta T2N 1N4, Canada
| | - Gino A DiLabio
- Department of Chemistry, University of British Columbia, 3247 University Way, Kelowna, British Columbia V1V 1V7, Canada
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Godlewski S, Engelund M, Peña D, Zuzak R, Kawai H, Kolmer M, Caeiro J, Guitián E, Vollhardt KPC, Sánchez-Portal D, Szymonski M, Pérez D. Site-selective reversible Diels–Alder reaction between a biphenylene-based polyarene and a semiconductor surface. Phys Chem Chem Phys 2018; 20:11037-11046. [DOI: 10.1039/c8cp01094c] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A multidisciplinary study reveals the chemistry of a polycyclic conjugated molecule on a Ge(001):H surface.
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Affiliation(s)
- Szymon Godlewski
- Centre for Nanometer-Scale Science and Advanced Materials
- NANOSAM
- Faculty of Physics
- Astronomy and Applied Computer Science
- Jagiellonian University
| | - Mads Engelund
- Centro de Física de Materiales CSIC-UPV/EHU and DIPC
- Donostia-San Sebastián
- Spain
| | - Diego Peña
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS) and Departamento de Química Orgánica
- Universidade de Santiago de Compostela
- 15782 Santiago de Compostela
- Spain
| | - Rafał Zuzak
- Centre for Nanometer-Scale Science and Advanced Materials
- NANOSAM
- Faculty of Physics
- Astronomy and Applied Computer Science
- Jagiellonian University
| | - Hiroyo Kawai
- Institute of Materials Research and Engineering
- 138634 Singapore
| | - Marek Kolmer
- Centre for Nanometer-Scale Science and Advanced Materials
- NANOSAM
- Faculty of Physics
- Astronomy and Applied Computer Science
- Jagiellonian University
| | - Jorge Caeiro
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS) and Departamento de Química Orgánica
- Universidade de Santiago de Compostela
- 15782 Santiago de Compostela
- Spain
| | - Enrique Guitián
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS) and Departamento de Química Orgánica
- Universidade de Santiago de Compostela
- 15782 Santiago de Compostela
- Spain
| | | | | | - Marek Szymonski
- Centre for Nanometer-Scale Science and Advanced Materials
- NANOSAM
- Faculty of Physics
- Astronomy and Applied Computer Science
- Jagiellonian University
| | - Dolores Pérez
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS) and Departamento de Química Orgánica
- Universidade de Santiago de Compostela
- 15782 Santiago de Compostela
- Spain
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5
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Engelund M, Godlewski S, Kolmer M, Zuzak R, Such B, Frederiksen T, Szymonski M, Sánchez-Portal D. The butterfly - a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations. Phys Chem Chem Phys 2016; 18:19309-17. [PMID: 27375264 DOI: 10.1039/c6cp04031d] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Dangling bond (DB) arrays on Si(001):H and Ge(001):H surfaces can be patterned with atomic precision and they exhibit complex and rich physics making them interesting from both technological and fundamental perspectives. But their complex behavior often makes scanning tunneling microscopy (STM) images difficult to interpret and simulate. Recently it was shown that low-temperature imaging of unoccupied states of an unpassivated dimer on Ge(001):H results in a symmetric butterfly-like STM pattern, despite the fact that the equilibrium dimer configuration is expected to be a bistable, buckled geometry. Here, based on a thorough characterization of the low-bias switching events on Ge(001):H, we propose a new imaging model featuring a dynamical two-state rate equation. On both Si(001):H and Ge(001):H, this model allows us to reproduce the features of the observed symmetric empty-state images which strongly corroborates the idea that the patterns arise due to fast switching events and provides an insight into the relationship between the tunneling current and switching rates. We envision that our new imaging model can be applied to simulate other bistable systems where fluctuations arise from transiently charged electronic states.
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Affiliation(s)
- Mads Engelund
- Centro de Física de Materiales (CFM), CSIC-UPV/EHU, Paseo Manuel de Lardizabal 5, 20018, Donostia-San Sebastián, Spain.
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6
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Dual role of CO in the stability of subnano Pt clusters at the Fe3O4(001) surface. Proc Natl Acad Sci U S A 2016; 113:8921-6. [PMID: 27457953 DOI: 10.1073/pnas.1605649113] [Citation(s) in RCA: 86] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Interactions between catalytically active metal particles and reactant gases depend strongly on the particle size, particularly in the subnanometer regime where the addition of just one atom can induce substantial changes in stability, morphology, and reactivity. Here, time-lapse scanning tunneling microscopy (STM) and density functional theory (DFT)-based calculations are used to study how CO exposure affects the stability of Pt adatoms and subnano clusters at the Fe3O4(001) surface, a model CO oxidation catalyst. The results reveal that CO plays a dual role: first, it induces mobility among otherwise stable Pt adatoms through the formation of Pt carbonyls (Pt1-CO), leading to agglomeration into subnano clusters. Second, the presence of the CO stabilizes the smallest clusters against decay at room temperature, significantly modifying the growth kinetics. At elevated temperatures, CO desorption results in a partial redispersion and recovery of the Pt adatom phase.
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7
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Kislitsyn DA, Mills JM, Kocevski V, Chiu SK, DeBenedetti WJI, Gervasi CF, Taber BN, Rosenfield AE, Eriksson O, Rusz J, Goforth AM, Nazin GV. Communication: Visualization and spectroscopy of defects induced by dehydrogenation in individual silicon nanocrystals. J Chem Phys 2016; 144:241102. [DOI: 10.1063/1.4954833] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Dmitry A. Kislitsyn
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon, 1253 University of Oregon, Eugene, Oregon 97403, USA
| | - Jon M. Mills
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon, 1253 University of Oregon, Eugene, Oregon 97403, USA
| | - Vancho Kocevski
- Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, Sweden
| | - Sheng-Kuei Chiu
- Department of Chemistry, Portland State University, Portland, Oregon 97201, USA
| | | | - Christian F. Gervasi
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon, 1253 University of Oregon, Eugene, Oregon 97403, USA
| | - Benjamen N. Taber
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon, 1253 University of Oregon, Eugene, Oregon 97403, USA
| | - Ariel E. Rosenfield
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon, 1253 University of Oregon, Eugene, Oregon 97403, USA
| | - Olle Eriksson
- Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, Sweden
| | - Ján Rusz
- Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, Sweden
| | - Andrea M. Goforth
- Department of Chemistry, Portland State University, Portland, Oregon 97201, USA
| | - George V. Nazin
- Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular and Quantum Science, University of Oregon, 1253 University of Oregon, Eugene, Oregon 97403, USA
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8
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Ren XY, Kim HJ, Niu CY, Jia Y, Cho JH. Origin of Symmetric Dimer Images of Si(001) Observed by Low-Temperature Scanning Tunneling Microscopy. Sci Rep 2016; 6:27868. [PMID: 27292000 PMCID: PMC4904415 DOI: 10.1038/srep27868] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2016] [Accepted: 05/26/2016] [Indexed: 11/09/2022] Open
Abstract
It has been a long-standing puzzle why buckled dimers of the Si(001) surface appeared symmetric below ~20 K in scanning tunneling microscopy (STM) experiments. Although such symmetric dimer images were concluded to be due to an artifact induced by STM measurements, its underlying mechanism is still veiled. Here, we demonstrate, based on a first-principles density-functional theory calculation, that the symmetric dimer images are originated from the flip-flop motion of buckled dimers, driven by quantum tunneling (QT). It is revealed that at low temperature the tunneling-induced surface charging with holes reduces the energy barrier for the flipping of buckled dimers, thereby giving rise to a sizable QT-driven frequency of the flip-flop motion. However, such a QT phenomenon becomes marginal in the tunneling-induced surface charging with electrons. Our findings provide an explanation for low-temperature STM data that exhibits apparent symmetric (buckled) dimer structure in the filled-state (empty-state) images.
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Affiliation(s)
- Xiao-Yan Ren
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.,Department of Physics and Research Institute for Natural Sciences, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea.,School of Mechanical and Electrical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, China
| | - Hyun-Jung Kim
- Department of Physics and Research Institute for Natural Sciences, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea.,Korea Institute for Advanced Study, 85 Hoegiro, Dongdaemun-gu, Seoul 130-722, Korea
| | - Chun-Yao Niu
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.,Center for Advanced Analysis and Computational Science, Zhengzhou University, Zhengzhou 45001, China
| | - Yu Jia
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.,Center for Advanced Analysis and Computational Science, Zhengzhou University, Zhengzhou 45001, China
| | - Jun-Hyung Cho
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.,Department of Physics and Research Institute for Natural Sciences, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea.,International Center for Quantum Design of Functional Materials (ICQD), HFNL, University of Science and Technology of China, Hefei, Anhui 230026, China
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