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Chang H, Li Z, Lou W, Yao Q, Lai JM, Liu B, Ni H, Niu Z, Chang K, Zhang J. Terahertz cavity optomechanics using a topological nanophononic superlattice. NANOSCALE 2022; 14:13046-13052. [PMID: 36056707 DOI: 10.1039/d2nr03376c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Cavity optomechanical systems operating at the quantum ground state provide a novel way for the ultrasensitive measurement of mass and displacement and provide a new toolbox for emerging quantum information technologies. The high-frequency optomechanical devices could reach the quantum ground state at a high temperature because the access to high frequency is favorable for the cavity optomechanical devices to decouple from the thermal environment. However, reaching ultra-high frequency (THz) is extremely difficult due to the structure of cavity optomechanical devices and properties of materials. In this paper, by introducing acoustic topological interface states, we designed a THz mechanical frequency semiconductor pillar microcavity optomechanical device based on a GaAs/AlAs nanophononic superlattice. In the optomechanical system, multi-optical cavity modes are obtained and the frequency separation between adjacent optical modes is equal to the frequency of the mechanical mode (optomechanical frequency matching). By detuning the laser pump to a lower (higher) energy-resolved sideband to make a spontaneously scattering photon doubly resonate with optical cavity modes at an anti-Stokes (Stokes) frequency and pump frequency, we can achieve an anti-Stokes (Stokes) scattering efficiency 2600 (1800) times larger than that of Stokes (anti-Stokes) scattering, which provides potential for laser cooling and low threshold phonon lasing in the optomechanical system.
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Affiliation(s)
- Haonan Chang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhenyao Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wenkai Lou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qifeng Yao
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bing Liu
- Joint Laboratory of Advanced Semiconductor, Nanjing Guoke Semiconductor Co., Ltd, China
| | - Haiqiao Ni
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhichuan Niu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Joint Laboratory of Advanced Semiconductor, Nanjing Guoke Semiconductor Co., Ltd, China
| | - Kai Chang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Simulation of Resonant Cavity-Coupled Colloidal Quantum-Dot Detectors with Polarization Sensitivity. COATINGS 2022. [DOI: 10.3390/coatings12040499] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Infrared detectors with polarization sensitivity could extend the information dimension of the detected signals and improve target recognition ability. However, traditional infrared polarization detectors with epitaxial semiconductors usually suffer from low extinction ratio, complexity in structure and high cost. Here, we report a simulation study of colloidal quantum dot (CQD) infrared detectors with monolithically integrated metal wire-grid polarizer and optical cavity. The solution processibility of CQDs enables the direct integration of metallic wire-grid polarizers with CQD films. The polarization selectivity of HgTe CQDs with resonant cavity-enhanced wire-grid polarizers are studied in both short-wave and mid-wave infrared region. The extinction ratio in short-wave and mid-wave region can reach up to 40 and 60 dB, respectively. Besides high extinction ratio, the optical cavity enhanced wire-grid polarizer could also significantly improve light absorption at resonant wavelength by a factor of 1.5, which leads to higher quantum efficiency and better spectral selectivity. We believe that coupling CQD infrared detector with wire-grid polarizer and optical cavity can become a promising way to realize high-performance infrared optoelectronic devices.
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