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Liu MJ, Chen HC, Yang TN, Wu SC, Kuo YJ, Cyu RH, Peng YR, Chueh YL. Rational design of comb-like 1D-1D ZnO-ZnSe heterostructures toward their excellent performance in flexible photodetectors. NANOSCALE 2024; 16:11203-11210. [PMID: 38774976 DOI: 10.1039/d3nr06617g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
One-dimensional (1D) Zn-based heterostructures have attracted considerable interest in the field of photodetection because of their tunable properties, flexibility, and unique optoelectronic properties. However, designing 1D multi-component Zn-based heterostructures for advanced photodetectors is still a great challenge. Herein, comb-like 1D-1D ZnO-ZnSe heterostructures with ZnO and ZnSe nanowires (NWs) comprising the shaft and teeth of a comb are reported. The length of the ZnO NWs can be modulated in the range of 300-1200 nm. Microstructural characterizations confirm that the 1D heterostructure clearly shows the spatial distribution of individual components. The well-designed structure displays an extended broadband photoresponse and higher photosensitivity than pure ZnSe NWs. Furthermore, ZnSe NWs with an appropriate length of ZnO branches show increased photoresponses of 3835% and 798% compared to those of pure ZnSe NWs under green and red-light irradiation, respectively. In addition, the integrated flexible photodetector presents excellent folding endurance after 1000 bending tests. This well-designed structure has significant potential for other 1D-based semiconductors in optoelectronic applications.
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Affiliation(s)
- Ming-Jin Liu
- Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Hsuan-Chu Chen
- Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Tse-Ning Yang
- Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.
| | - Shu-Chi Wu
- Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Yao-Jen Kuo
- Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Ruei-Hong Cyu
- Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Yu-Ren Peng
- Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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Jezeh ZA, Efafi B, Ghafary B. The effect of electrode shape on Schottky barrier and electric field distribution of flexible ZnO photodiode. Sci Rep 2021; 11:15604. [PMID: 34341440 PMCID: PMC8329072 DOI: 10.1038/s41598-021-95203-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2021] [Accepted: 07/22/2021] [Indexed: 02/07/2023] Open
Abstract
In this study, the effect of electrode shape difference on the height of the Schottky barrier and the electric field in flexible photodiodes (PDs) has been investigated. For this purpose, three different electrode designs were prepared on three flexible FR4 layers that were coated with Zinc Oxide (ZnO). The printing circuit board (PCB) method was used to create these copper electrodes. The asymmetry of the PD electrodes and the difference in the height of the Schottky barrier has led to the creation of self-powered PDs. The effect of the amount and shape of the distribution of internal electric fields generated in the PDs and its effect on the parameters of the PDs has been investigated with the help of simulations performed in COMSOL software. The photocurrent of the sample with circular and rectangular electrodes was equal to 470 µA in 15 V bias, which was twice as good as a sample with an interdigitated MSM structure. Also, this sample had the best response time among these three samples, which was equal to 440 ms.
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Affiliation(s)
- Zahra Aminrayai Jezeh
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran
| | - Babak Efafi
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran.
- Nano Photonics Lab, Applied Science Research Center, Kharazmi University, Alborz, Iran.
| | - Bijan Ghafary
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran
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Choi KW, Shin C, Jun S, Park SJ, Hwang Y, Kwak JH, Park YW, Kim JW, Ju BK. Solution process manufacture of a simple, multifunctional flexible sensor based on capacitance measurement. NANOTECHNOLOGY 2021; 32:265503. [PMID: 33825697 DOI: 10.1088/1361-6528/abed73] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2020] [Accepted: 03/10/2021] [Indexed: 06/12/2023]
Abstract
Conventional sensors are rigid, involve complex processes and structures, and one sensor can detect only one type of stimulus. The manufacturing costs of such devices are high owing to the use of vacuum processes for the formation of thin films and electrodes and the complicated fabrication processes required to construct multiple layers. In addition, the multiple-layer design increases the risk of peeling due to mechanical movement. In this study, to solve the aforementioned problems, a simple two-layer multi-sensor has been fabricated using a non-vacuum solution process. The sensor consists of a light absorption layer comprising polyvinyl butyral and semiconductor particles and a top layer comprising two spiral-shaped Ag nanowire electrodes. The sensor experiences minimal damage by external adhesives and has a light-sensitive optical response at 420 nm and at 1.2 mW cm-2. Herein, the capacitance of the sensor applied to the two-electrode structure was determined, along with the light sensitivity and change in noise with frequency. We believe that the proposed multi-sensor can be applied in a wide range of fields because it can act as a touch sensor and light sensor.
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Affiliation(s)
- Kwang Wook Choi
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Cheol Shin
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
- Samsung Display Co., Samsung Street 181, Tangjeong-Myeon, Asan-si, Chungcheongnam-do 31460, Republic of Korea
| | - Sungwoo Jun
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Soo Jong Park
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Yooji Hwang
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jin Ho Kwak
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
- Samsung Display Co., Samsung Street 181, Tangjeong-Myeon, Asan-si, Chungcheongnam-do 31460, Republic of Korea
| | - Young Wook Park
- Department of Display and Semiconductor Engineering, SUN MOON University Asan Campus, 70 221-beongil, Sunmoon-ro, Tangjeong-myeon, Asan-si, Chungcheongnam-do 31460, Republic of Korea
| | - Jong-Woong Kim
- School of Advanced Materials Engineering, Chonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju, 54896, Republic of Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
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Meng J, Li Z. Schottky-Contacted Nanowire Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000130. [PMID: 32484268 DOI: 10.1002/adma.202000130] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2020] [Revised: 03/16/2020] [Accepted: 03/22/2020] [Indexed: 06/11/2023]
Abstract
The progress of the Internet-of-Things in the past few years has necessitated the support of high-performance sensors. Schottky-contacted nanowire sensors have attracted considerable attention owing to their high sensitivity and fast response time. Their progress is reviewed here, based on several kinds of important nanowires, for applications such as bio/chemical sensors, gas sensors, photodetectors, and strain sensors. Although Schottky-contacted nanowire sensors deliver excellent performance in these fields, they can be further improved by various methods, including defect engineering, surface modification, the piezotronic effect, and the piezophototronic effect, all of which are discussed here. With regard to practical applications, further efforts are required to address challenges such as the stability, selectivity, ultrafast response, multifunctionality, flexibility, distributed energy supply, and sustainability of Schottky-contacted nanowire sensors. Finally, future perspectives and solutions are discussed.
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Affiliation(s)
- Jianping Meng
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhou Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- Center of Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
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6
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Vu TKO, Lee DU, Kim EK. The enhancement mechanism of photo-response depending on oxygen pressure for Ga 2O 3 photo detectors. NANOTECHNOLOGY 2020; 31:245201. [PMID: 32066119 DOI: 10.1088/1361-6528/ab76f5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We have optimized the responsivity and response speed of a β-Ga2O3-based photodetector. The β-Ga2O3 thin films were deposited on a glass substrate under various oxygen partial pressures from 0 to 50 mTorr using pulsed laser deposition. Time-response measurements show that the as-grown β-Ga2O3 at an oxygen partial pressure of 50 mTorr has the fastest response speed and decay times of 33 and 100 ms, which are better than those prepared at lower oxygen pressures. This sample also showed a high photoresponsivity of 5 A W-1 and detectivity of 1012 cmHz1/2/W. The high performance of the β-Ga2O3 detector grown at the oxygen partial pressure of 50 mTorr might be due to the reduction of oxygen vacancies caused by the increase in oxygen content during deposition. The results reveal the importance of the oxygen processing gas in promoting photodetector performance.
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Li W, Wang J, Poudel B, Kang HB, Huxtable S, Nozariasbmarz A, Saparamadu U, Priya S. Filiform Metal Silver Nanoinclusions To Enhance Thermoelectric Performance of P-type Ca 3Co 4O 9+δ Oxide. ACS APPLIED MATERIALS & INTERFACES 2019; 11:42131-42138. [PMID: 31617993 DOI: 10.1021/acsami.9b13607] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Cd doping and metallic Ag additives in Ca3Co4O9+δ polycrystalline materials are shown to result in improved thermoelectric (TE) transport properties. Carrier concentration and mobility were optimized through the combination of doping and compositional modulation approaches. The formation of filiform Ag nanoinclusions between the interlayers and grain boundaries enhances the anisotropic carrier transport, leading to higher carrier mobility. A spin entropy enhancement due to the change of the net valence of Co induced by Cd substitution on the Ca site was confirmed by X-ray photoelectron spectroscopy. High carrier mobility and enhanced spin entropy results in higher electrical conductivity and Seebeck coefficient, leading to the increase of the power factor. In conjunction, mass fluctuation between Cd and Ca on the same crystal site along with the increase of metallic Ag nanoinclusions effectively lowers thermal conductivity. Consequently, the figure-of-merit, zT, has been improved to 0.31 at 950 K for 10 wt % Ag-modified Ca2.9Cd0.1Co4O9+δ specimen, which is a significant improvement compared to the pristine material. This dual-mode control of electron and phonon transport by including Ag additives and Cd doping offers an approach for tuning the correlated TE parameters.
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Affiliation(s)
- Wenjie Li
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Jue Wang
- Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Bed Poudel
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Han Byul Kang
- Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Scott Huxtable
- Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Amin Nozariasbmarz
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Udara Saparamadu
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Shashank Priya
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
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Jun S, Choi SB, Han CJ, Yu YT, Lee CR, Ju BK, Kim JW. Fabrication and Characterization of a Capacitive Photodetector Comprising a ZnS/Cu Particle/Poly(vinyl butyral) Composite. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4416-4424. [PMID: 30644712 DOI: 10.1021/acsami.8b20136] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Most photodetectors developed to date essentially measure photocurrents induced by the generation and separation of electron-hole pairs in semiconductors during irradiation. Although the above light detection method is well established, highly sensitive, and applicable to a broad range of semiconductor materials, it requires the presence of a stable and direct contact between the semiconductor and the electrode for accurate photocurrent measurements. In turn, this prerequisite necessitates the use of various costly processes for device fabrication (e.g., photolithography and vacuum deposition of semiconductors/metals) and complicates the development of flexible devices. Herein, inspired by the fact that the dielectric properties of certain materials can be changed by light irradiation, we dispersed ZnS/Cu semiconducting particles in poly(vinyl butyral) to prepare a free-standing composite film and formed two layers of Ag nanowire electrodes on both sides of the cured composite to fabricate a photodetector of a completely new type. The developed device exhibited a capacitance very sensitive to irradiation with light of a specific wavelength and additionally featured the advantages of simple structure/operation mechanism, mechanical flexibility, and transparency, not showing any signs of performance deterioration even after severe damage.
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Affiliation(s)
- Sungwoo Jun
- Display Materials & Components Research Center , Korea Electronics Technology Institute , Seongnam 463-816 , Republic of Korea
- Display and Nanosystem Laboratory, College of Engineering , Korea University , Seoul 136-713 , Republic of Korea
| | - Su Bin Choi
- School of Advanced Materials Engineering , Chonbuk National University , 567 Baekje-daero , Deokjin-gu, Jeonju 54896 , Republic of Korea
| | - Chul Jong Han
- Display Materials & Components Research Center , Korea Electronics Technology Institute , Seongnam 463-816 , Republic of Korea
| | - Yeon-Tae Yu
- School of Advanced Materials Engineering , Chonbuk National University , 567 Baekje-daero , Deokjin-gu, Jeonju 54896 , Republic of Korea
| | - Cheul-Ro Lee
- School of Advanced Materials Engineering , Chonbuk National University , 567 Baekje-daero , Deokjin-gu, Jeonju 54896 , Republic of Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, College of Engineering , Korea University , Seoul 136-713 , Republic of Korea
| | - Jong-Woong Kim
- School of Advanced Materials Engineering , Chonbuk National University , 567 Baekje-daero , Deokjin-gu, Jeonju 54896 , Republic of Korea
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Tong T, Wang S, Zhao J, Cheng B, Xiao Y, Lei S. Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector. NANOSCALE HORIZONS 2019; 4:138-147. [PMID: 32254149 DOI: 10.1039/c8nh00182k] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Single CdS nanobelt-based photodetectors are strongly dependent on bias and temperature. They not only show a strong photoresponse to close bandgap energy light with ultrahigh responsivity of approximately 107 A W-1, large photo-to-dark current ratio of 104, photoconductive gain of 107, and fast response and recovery speed at a large bias of 20 V, but can also show a weak photoresponse to above- and below-bandgap energy light. Moreover, their spectral response range can show tunable selectivity to above- and below-bandgap light, which can be accurately controlled by temperature and bias. More importantly, the modulated spectral response characteristics show excellent memory behaviour after reversible writing and erasing by using temperature and bias. In nanostructures, abundant surface states and stacking fault-related traps play a vital role in the ultrahigh photoresponse to bandgap light and the erasable memory effect on spectral response range selectivity. Given the erasable memory of the spectral response selectivity with excellent photoconduction performance, the CdS NBs possess important applications in new-generation photodetection and photomemory devices.
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Affiliation(s)
- Tao Tong
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China.
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Han S, Lee SK, Choi I, Song J, Lee CR, Kim K, Ryu MY, Jeong KU, Kim JS. Highly Efficient and Flexible Photosensors with GaN Nanowires Horizontally Embedded in a Graphene Sandwich Channel. ACS APPLIED MATERIALS & INTERFACES 2018; 10:38173-38182. [PMID: 30360044 DOI: 10.1021/acsami.8b11229] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this study, we report highly efficient and flexible photosensors with GaN nanowires (NWs) horizontally embedded in a graphene sandwich structure fabricated on polyethylene terephthalate. GaN NWs and the graphene sandwich structure are used as light-absorbing media and the channel for carrier movement, respectively. To form uniform high-quality crystalline GaN NWs on Si(111) substrates, the initial nucleation behavior of the NWs was manipulated by applying the new growth technique of Ga predeposition. High-resolution transmission electron microscopic images obtained along the vertical direction of GaN NWs showed that stacking faults, typically observed in Si-based (In,Ga)As NWs, were rare. Consequently, narrow and strong optical emission was observed from the GaN NWs at wavelengths of 365.12 nm at 300 K. The photocurrent and photoresponsivity of the flexible photosensor with 802 nm long GaN NWs horizontally embedded in the graphene sandwich channel were measured as 9.17 mA and 91.70 A/W, respectively, at the light intensity of 100 mW/cm2, which are much higher than those previously reported. The high optical-to-electrical conversion characteristics of our flexible photosensors are attributed to the increase in the effective interface between the light-absorbing media and the carrier channel by the horizontal distribution of the GaN NWs within the graphene sandwich structure. After 200 cyclic-bending test of the GaN NW photosensor at the strain of 3%, the photoresponsivity under strain was measured as 89.04 A/W at 100 mW/cm2, corresponding to 97.1% of the photoresponsivity obtained before bending. The photosensor proposed in this study is relatively simple in device design and fabrication, and it requires no sophisticated nanostructural design to minimize the resistance to metal contacts.
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Affiliation(s)
| | - Seoung-Ki Lee
- Applied Quantum Composites Research Center , Korea Institute of Science and Technology , Wanju 55324 , South Korea
| | | | | | | | - Kangmin Kim
- Applied Quantum Composites Research Center , Korea Institute of Science and Technology , Wanju 55324 , South Korea
| | - Mee-Yi Ryu
- Department of Physics , Kangwon National University , Chuncheon 24341 , South Korea
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11
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Muthalif MPA, Sunesh CD, Choe Y. Enhanced light absorption and charge recombination control in quantum dot sensitized solar cells using tin doped cadmium sulfide quantum dots. J Colloid Interface Sci 2018; 534:291-300. [PMID: 30237116 DOI: 10.1016/j.jcis.2018.09.035] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2018] [Revised: 08/28/2018] [Accepted: 09/11/2018] [Indexed: 10/28/2022]
Abstract
The photovoltaic performance of quantum dot sensitized solar cells (QDSSCs) is limited due to charge recombination processes at the photoelectrode/electrolyte interfaces. We analyzed the effect of Sn4+ ion incorporation into CdS quantum dots (QDs) deposited onto TiO2 substrates in terms of enhancing light absorption and retarding electron-hole recombination at the TiO2/QDs/electrolyte interfaces. Sensitization involved depositing CdS QDs with different Sn4+ concentrations on the surface of TiO2 using a facile and cost-effective successive ionic layer adsorption and reaction (SILAR) method. Optimized photovoltaic performance of Sn-CdS sensitized QDSSCs was explored using CuS counter electrodes (CEs) and a polysulfide electrolyte. Structural and optical studies of the photoanodes revealed that the gaps between CdS nanoparticles were partially filled by Sn4+ ions, which enhanced the light absorption of the solar cell device. Electrochemical impedance spectroscopy (EIS) and open circuit voltage decay (OCVD) tests suggested that Sn4+ ions can remarkably retard electron-hole recombination at the interfaces, stimulate electron injection into semiconductor QD layers, and provide long-term electron lifetime to the cells. We found that solar cells based on CdS photoanodes doped with 10% Sn4+ ions exhibited a superior power conversion efficiency (PCE) of 3.22%, open circuit voltage (Voc) of 0.593 V, fill factor (FF) of 0.561, and short-circuit current density (Jsc) of 9.68 mA cm-2 under an air mass coefficient (AM) 1.5 G full sun illumination. These values were much higher than those of QDSSCs based on bare CdS photoanodes (PCE = 2.16%, Voc = 0.552 V, FF = 0.471, and Jsc = 8.31 mA cm-2).
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Affiliation(s)
- Mohammed Panthakkal Abdul Muthalif
- Department of Polymer Science and Chemical Engineering, Pusan National University, Geumjeong-Ku, Jangjeong-Dong, Busan 46241, South Korea
| | - Chozhidakath Damodharan Sunesh
- Department of Polymer Science and Chemical Engineering, Pusan National University, Geumjeong-Ku, Jangjeong-Dong, Busan 46241, South Korea
| | - Youngson Choe
- Department of Polymer Science and Chemical Engineering, Pusan National University, Geumjeong-Ku, Jangjeong-Dong, Busan 46241, South Korea.
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Dai Y, Wang X, Peng W, Xu C, Wu C, Dong K, Liu R, Wang ZL. Self-Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro-phototronic Effect: An Approach for Photosensing below Bandgap Energy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1705893. [PMID: 29334148 DOI: 10.1002/adma.201705893] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2017] [Revised: 11/20/2017] [Indexed: 05/22/2023]
Abstract
Cadmium sulfide (CdS) has received widespread attention as the building block of optoelectronic devices due to its extraordinary optoelectronic properties, low work function, and excellent thermal and chemical stability. Here, a self-powered flexible photodetector (PD) based on p-Si/n-CdS nanowires heterostructure is fabricated. By introducing the pyro-phototronic effect derived from wurtzite structured CdS, the self-powered PD shows a broadband response range, even beyond the bandgap limitation, from UV (325 nm) to near infrared (1550 nm) under zero bias with fast response speed. The light-induced pyroelectric potential is utilized to modulate the optoelectronic processes and thus improve the photoresponse performance. Lasers with different wavelengths have different effects on the self-powered PDs and corresponding working mechanisms are carefully investigated. Upon 325 nm laser illumination, the rise time and fall time of the self-powered PD are 245 and 277 µs, respectively, which are faster than those of most previously reported CdS-based nanostructure PDs. Meanwhile, the photoresponsivity R and specific detectivity D* regarding to the relative peak-to-peak current are both enhanced by 67.8 times, compared with those only based on the photovoltaic effect-induced photocurrent. The self-powered flexible PD with fast speed, stable, and broadband response is expected to have extensive applications in various environments.
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Affiliation(s)
- Yejing Dai
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China
| | - Xingfu Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Wenbo Peng
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Cheng Xu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Changsheng Wu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Kai Dong
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Ruiyuan Liu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Zhong Lin Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
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Lam KT, Hsiao YJ, Ji LW, Fang TH, Hsiao KH, Chu TT. High-Sensitive Ultraviolet Photodetectors Based on ZnO Nanorods/CdS Heterostructures. NANOSCALE RESEARCH LETTERS 2017; 12:31. [PMID: 28091943 PMCID: PMC5236045 DOI: 10.1186/s11671-016-1818-6] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/11/2016] [Accepted: 12/25/2016] [Indexed: 06/06/2023]
Abstract
The ultraviolet (UV) photodetectors with ZnO nanorods (NRs)/CdS thin film heterostructures on glass substrates have been fabricated and characterized. It can be seen that the UV photoresponsivity of such a device became higher as the ZnO NR length was increased in the investigation. With an incident wavelength of 350 nm and 5 V applied bias, the responsivity of photodetectors based on ZnO NR/CdS heterostructures with the ZnO NR length at 500, 350, and 200 nm and traditional CdS film were at 12.86, 3.83, 0.91, and 0.75 A/W, respectively. The measurement results of the fabricated photodetectors based on ZnO nanorods (NRs)/CdS heterostructures have shown a significant high sensitivity in the range of UV light, which can be useful for the application of UV detection.
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Affiliation(s)
- Kin-Tak Lam
- Fujian University of Technology, Fuzhou, People’s Republic of China
| | - Yu-Jen Hsiao
- National Nano Device Laboratories, National Applied Research Laboratories, Tainan, 701 Taiwan
| | - Liang-Wen Ji
- Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin, 632 Taiwan
| | - Te-Hua Fang
- Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, 807 Taiwan
| | - Kai-Hua Hsiao
- Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin, 632 Taiwan
| | - Tung-Te Chu
- Department of Mechanical Engineering and Automation Engineering, Kao Yuan University, Kaohsiung, 821 Taiwan
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Xie C, Yan F. Flexible Photodetectors Based on Novel Functional Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701822. [PMID: 28922544 DOI: 10.1002/smll.201701822] [Citation(s) in RCA: 91] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2017] [Revised: 07/08/2017] [Indexed: 06/07/2023]
Abstract
Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.
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Affiliation(s)
- Chao Xie
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
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15
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Spies M, den Hertog MI, Hille P, Schörmann J, Polaczyński J, Gayral B, Eickhoff M, Monroy E, Lähnemann J. Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors. NANO LETTERS 2017; 17:4231-4239. [PMID: 28613893 DOI: 10.1021/acs.nanolett.7b01118] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam-induced current measurements. The devices display enhanced response in the ultraviolet A (≈ 330-360 nm)/B (≈ 280-330 nm) spectral windows under positive/negative bias. The result is explained by correlation of the photocurrent measurements with scanning transmission electron microscopy observations of the same single nanowire and semiclassical simulations of the strain and band structure in one and three dimensions.
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Affiliation(s)
- Maria Spies
- University Grenoble-Alpes , 38000 Grenoble, France
- CNRS-Institut Néel , 25 avenue des Martyrs, 38000 Grenoble, France
| | - Martien I den Hertog
- University Grenoble-Alpes , 38000 Grenoble, France
- CNRS-Institut Néel , 25 avenue des Martyrs, 38000 Grenoble, France
| | - Pascal Hille
- I. Physikalisches Institut, Justus Liebig Universität Gießen , Heinrich-Buff-Ring 16, 35390 Gießen, Germany
- Institut für Festkörperphysik, Universität Bremen , 28359 Bremen, Germany
| | - Jörg Schörmann
- I. Physikalisches Institut, Justus Liebig Universität Gießen , Heinrich-Buff-Ring 16, 35390 Gießen, Germany
| | - Jakub Polaczyński
- University Grenoble-Alpes , 38000 Grenoble, France
- CNRS-Institut Néel , 25 avenue des Martyrs, 38000 Grenoble, France
| | - Bruno Gayral
- University Grenoble-Alpes , 38000 Grenoble, France
- CEA-INAC-PHELIQS , 17 avenue des Martyrs, 38000 Grenoble, France
| | - Martin Eickhoff
- I. Physikalisches Institut, Justus Liebig Universität Gießen , Heinrich-Buff-Ring 16, 35390 Gießen, Germany
- Institut für Festkörperphysik, Universität Bremen , 28359 Bremen, Germany
| | - Eva Monroy
- University Grenoble-Alpes , 38000 Grenoble, France
- CEA-INAC-PHELIQS , 17 avenue des Martyrs, 38000 Grenoble, France
| | - Jonas Lähnemann
- University Grenoble-Alpes , 38000 Grenoble, France
- CEA-INAC-PHELIQS , 17 avenue des Martyrs, 38000 Grenoble, France
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
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16
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Kim M, Kang P, Leem J, Nam S. A stretchable crumpled graphene photodetector with plasmonically enhanced photoresponsivity. NANOSCALE 2017; 9:4058-4065. [PMID: 28116377 DOI: 10.1039/c6nr09338h] [Citation(s) in RCA: 38] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Graphene has been widely explored for flexible, high-performance photodetectors due to its exceptional mechanical strength, broadband absorption, and high carrier mobility. However, the low stretchability and limited photoabsorption of graphene have restricted its applications in flexible and highly sensitive photodetection systems. Various hybrid systems based on photonic or plasmonic nanostructures have been introduced to improve the limited photoresponsivity of graphene photodetectors. In most cases, the hybrid systems succeeded in the enhancement of photoresponsivity, but showed limited mechanical stretchability. Here, we demonstrate a stretchable photodetector based on a crumpled graphene-gold nanoparticle (AuNP) hybrid structure with ∼1200% enhanced photoresponsivity, compared to a conventional flat graphene-only photodetector, and exceptional mechanical stretchability up to a 200% tensile strain. We achieve plasmonically enhanced photoresponsivity by integrating AuNPs with graphene. By crumpling the hybrid structure, we realize mechanical stretchability and further enhancement of the optical absorption by densification. We also demonstrate that our highly stretchable photodetector with enhanced photoresponsivity can be integrated on a contact lens and a spring structure. We believe that our stretchable, high performance graphene photodetector can find broad applications for conformable and flexible optical sensors and dynamic mechanical strain sensors.
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Affiliation(s)
- Minsu Kim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.
| | - Pilgyu Kang
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - Juyoung Leem
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - SungWoo Nam
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA. and Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
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17
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Lee DJ, Ilanchezhiyan P, Mohan Kumar G, Kwak DW, Woo YD, Kim DY, Kang TW. MWCNT/CdS nanobelt based hybrid structures and their enhanced photoelectrical performance. Chem Phys Lett 2017. [DOI: 10.1016/j.cplett.2016.11.039] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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18
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Mahdi MS, Ibrahim K, Hmood A, Ahmed N, Azzez SA, Mustafa FI. A highly sensitive flexible SnS thin film photodetector in the ultraviolet to near infrared prepared by chemical bath deposition. RSC Adv 2016. [DOI: 10.1039/c6ra24491b] [Citation(s) in RCA: 74] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A novel flexible broad band UV-vis-NIR SnS photodetector with high photosensitivity and fast response time for scientific and industrial applications.
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Affiliation(s)
- Mohamed S. Mahdi
- Universiti Sains Malaysia
- School of Physics
- Malaysia
- Renewable Energy Directorate
- Ministry of Science and Technology
| | - K. Ibrahim
- Universiti Sains Malaysia
- School of Physics
- Malaysia
| | - A. Hmood
- Microelectronics and Nanotechnology Research Laboratory (M. N. R. Lab.)
- University of Basrah
- College of Science
- Physics Department
- Basrah
| | | | - Shrook A. Azzez
- Universiti Sains Malaysia
- School of Physics
- Malaysia
- Renewable Energy Directorate
- Ministry of Science and Technology
| | - Falah I. Mustafa
- Renewable Energy Directorate
- Ministry of Science and Technology
- Baghdad
- Iraq
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