NH₄OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics.
MATERIALS 2017;
11:ma11010037. [PMID:
29280963 PMCID:
PMC5793535 DOI:
10.3390/ma11010037]
[Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2017] [Revised: 12/14/2017] [Accepted: 12/23/2017] [Indexed: 11/25/2022]
Abstract
Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH4OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH− ion concentration was effectively controlled by the addition of an optimum amount of NH4OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes.
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