Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors

Tribo-Piezoelectricity in Group III Nitride Bilayers: A Density Functional Theory Investigation

The notable out-of-plane piezoelectric effect caused by the large electronegativity of the constituent elements makes two-dimensional (2D) group III nitrides appealing for nanoscale energy-harvesting applications. Here, we demonstrate by extensive density functional theory investigations that the vertical piezoelectricity is enhanced significantly in 2D XN (X = B, Al, Ga) bilayers due to in-plane interlayer sliding. The sliding operation generates tribological energy from the vertical resistance force between the monolayers. A maximum shear strength between the monolayers of 1-25 GPa is recorded during vertical sliding. We elucidate the tribo-piezoelectricity generation mechanism of XN bilayers using the tribological energy conversion to overcome the interfacial sliding barrier. The strongest out-of-plane piezoelectricity is found when the bilayers are in the A-A stacking arrangement. Any reduction in the interlayer distance between group III nitride bilayers enhances out-of-plane polarization due to the increase in sliding energy resistances, leading to an increased inductive voltage output. An induced voltage of ∼3.5 V is achieved during vertical compressive sliding of the upper layer. Using these phenomena, we present a compression-slide XN bilayer nanogenerator strategy capable of tuning the produced tribo-piezoelectric energy through sliding and compression.

Strong tribo-piezoelectric effect in bilayer indium nitride (InN)

The high electronegativity between the atoms of two-dimensional (2D) group-III nitrides makes them attractive to demonstrating a strong out-of-plane piezo-electricity effect. Energy harvesting devices can be predicted by cultivating such salient piezoelectric features. This work explores the tribo-piezoelectric properties of 2D-indium nitride (InN) as a promising candidate in nanogenerator applications by means of first-principles calculations. In-plane interlayer sliding between two InN monolayers leads to a noticeable rise of vertical piezoelectricity. The vertical resistance between the InN bilayer renders tribological energy by the sliding effect. During the vertical sliding, a shear strength of 6.6-9.7 GPa is observed between the monolayers. The structure can be used as a tribo-piezoelectric transducer to extract force and stress from the generated out-of-plane tribo-piezoelectric energy. The A-A stacking of the bilayer InN elucidates the highest out-of-plane piezoelectricity. Any decrease in the interlayer distance between the monolayers improves the out-of-plane polarization and thus, increases the inductive voltage generation. Vertical compression of bilayer InN produces an inductive voltage in the range of 0.146-0.196 V. Utilizing such a phenomenon, an InN-based bilayer compression-sliding nanogenerator is proposed, which can tune the generated tribo-piezoelectric energy by compressing the interlayer distance between the InN monolayers. The considered model can render a maximum output power density of ~ 73 mWcm-2 upon vertical sliding.

Barium Sulfide under Pressure: Discovery of Metastable Polymorphs and Investigation of Electronic Properties on ab Initio Level

Barium sulfide (BaS) is an important precursor to other barium compounds with applications from ceramics and flame retardants to luminous paints and additives, and recent research shows potential technological applications in electrical and optical devices. Under normal conditions, BaS crystallizes in the NaCl type of structure, and with the increase in pressure BaS undergoes a structural phase transition to a CsCl type modification. This study presents modeling of barium sulfide under pressure with special focus on structural aspects and electronic properties. We predict metastable BaS polymorphs which have not yet been observed in the experiment or in previous calculations, and we investigated their vibrational and thermodynamical properties. Furthermore, we investigate the electronic properties of experimentally known structures as well as novel predicted modifications of BaS on ab initio level using Hartree-Fock, GGA-PBE, and the hybrid B3LYP functional. In this way, we address new possibilities of synthesizing BaS and possible band gap tuning which can have great applications in optoelectrical technologies.