Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons

Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses challenges to device reliability and uniformity. To overcome this issue, various defect engineering methods have been explored, including doping, metal nanoparticle embedding, and extended defect utilization. In this study, we present a simple and effective approach using self-assembled uniform Au nanoelectrodes to controll filament formation in HfO2 resistive switching devices. By concentrating the electric field near the Au nanoelectrodes within the BaTiO3 matrix, we significantly enhanced the device stability and reduced the threshold voltage by up to 45% in HfO2-based artificial neurons compared to the control devices. The threshold voltage reduction is attributed to the uniformly distributed Au nanoelectrodes in the insulating matrix, as confirmed by COMSOL simulation. Our findings highlight the potential of nanostructure design for precise control of filamentary-type resistive switching devices.

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.

Functionalization of Metal and Carbon Nanoparticles with Potential in Cancer Theranostics

Cancer theranostics is a new concept of medical approach that attempts to combine in a unique nanoplatform diagnosis, monitoring and therapy so as to provide eradication of a solid tumor in a non-invasive fashion. There are many available solutions to tackle cancer using theranostic agents such as photothermal therapy (PTT) and photodynamic therapy (PDT) under the guidance of imaging techniques (e.g., magnetic resonance-MRI, photoacoustic-PA or computed tomography-CT imaging). Additionally, there are several potential theranostic nanoplatforms able to combine diagnosis and therapy at once, such as gold nanoparticles (GNPs), graphene oxide (GO), superparamagnetic iron oxide nanoparticles (SPIONs) and carbon nanodots (CDs). Currently, surface functionalization of these nanoplatforms is an extremely useful protocol for effectively tuning their structures, interface features and physicochemical properties. This approach is much more reliable and amenable to fine adjustment, reaching both physicochemical and regulatory requirements as a function of the specific field of application. Here, we summarize and compare the most promising metal- and carbon-based theranostic tools reported as potential candidates in precision cancer theranostics. We focused our review on the latest developments in surface functionalization strategies for these nanosystems, or hybrid nanocomposites consisting of their combination, and discuss their main characteristics and potential applications in precision cancer medicine.

High-Uniformity Threshold Switching HfO2-Based Selectors with Patterned Ag Nanodots

High-performance selector devices are essential for emerging nonvolatile memories to implement high-density memory storage and large-scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high-uniformity threshold switching HfO2-based selectors are fabricated by using e-beam lithography to pattern controllable Ag nanodots (NDs) with high order and uniform size in the cross-point region. The selectors exhibit excellent bidirectional threshold switching performance, including low leakage current (<1 pA), high on/off ratio (>108), high endurance (>108 cycles), and fast switching speed (≈75 ns). The patterned Ag NDs in the selector help control the number of Ag atoms diffusing into HfO2 and confine the positions to form reproducible filaments. According to the statistical analysis, the Ag NDs selectors show much smaller cycle-to-cycle and device-to-device variations (C V < 10%) compared to control samples with nonpatterned Ag thin film. Furthermore, when integrating the Ag NDs selector with resistive switching memory in one-selector-one-resistor (1S1R) structure, the reduced selector variation helps significantly reduce the bit error rate in 1S1R crossbar array. The high-uniformity Ag NDs selectors offer great potential in the fabrication of large-scale 1S1R crossbar arrays for future memory and neuromorphic computing applications.

Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe₃O₄ nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe₃O₄ nanocrystals on Ge nuclei had a well-controlled interface (Fe₃O₄/GeO_x/Ge) composed of high-crystallinity Fe₃O₄ and high-quality GeO_x layers. The nanocrystals showed uniform resistive switching characteristics (high switching probability of ~90%) and relatively high Off/On resistance ratio (~58). The high-quality interface enables electric field application to Fe₃O₄ and GeO_x near the interface, which leads to effective positively charged oxygen vacancy movement, resulting in high-performance resistive switching. Furthermore, we successfully observed memory effect in nanocrystals with well-controlled interface. The experimental confirmation of the memory effect existence even in ultrasmall nanocrystals is significant for realizing non-volatile nanocrystal memory leading to neuromorphic devices.

Memristor in a Reservoir System-Experimental Evidence for High-Level Computing and Neuromorphic Behavior of PbI2

Lead halides in an asymmetric layered structure form memristive devices which are controlled by the electronic structure of the PbX₂|metal interface. In this paper, we explain the mechanism that stands behind the I- V pinched hysteresis loop of the device and shortly present its synaptic-like plasticity (spike-timing-dependent plasticity and spike-rate-dependent plasticity) and nonvolatile memory effects. This memristive element was incorporated into a reservoir system, in particular, the echo-state network with delayed feedback, which exhibits brain-like recurrent behavior and demonstrates metaplasticity as one of the available learning mechanisms. It can serve as a classification system that classifies input signals according to their amplitude.

Micro-/Nanofluidics for Liquid-Mediated Patterning of Hybrid-Scale Material Structures

Various materials are fabricated to form specific structures/patterns at the micro-/nanoscale, which exhibit additional functions and performance. Recent liquid-mediated fabrication methods utilizing bottom-up approaches benefit from micro-/nanofluidic technologies that provide a high controllability for manipulating fluids containing various solutes, suspensions, and building blocks at the microscale and/or nanoscale. Here, the state-of-the-art micro-/nanofluidic approaches are discussed, which facilitate the liquid-mediated patterning of various hybrid-scale material structures, thereby showing many additional advantages in cost, labor, resolution, and throughput. Such systems are categorized here according to three representative forms defined by the degree of the free-fluid-fluid interface: free, semiconfined, and fully confined forms. The micro-/nanofluidic methods for each form are discussed, followed by recent examples of their applications. To close, the remaining issues and potential applications are summarized.

Electrochemical Tantalum Oxide for Resistive Switching Memories

Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta₂ O₅ -based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical-oxide-based devices demonstrate superior properties, i.e., endurance of at least 10⁶ pulse cycles and/or 10³ I-V sweeps maintaining a good memory window with a low dispersion in R_OFF and R_ON values, nanosecond fast switching, and data retention of at least 10⁴ s. Multilevel programing capability is presented with both I-V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories.

Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design

The development of RRAM is one of the mainstreams for next generation non-volatile memories to replace the conventional charge-based flash memory. More importantly, the simpler structure of RRAM makes it feasible to be integrated into a passive crossbar array for high-density memory applications. By stacking up the crossbar arrays, the ultra-high density of 3D horizontal RRAM (3D-HRAM) can be realized. However, 3D-HRAM requires critical lithography and other process for every stacked layer, and this fabrication cost overhead increases linearly with the number of stacks. Here, it is demonstrated that the 2D material-based vertical RRAM structure composed of graphene plane electrode/multilayer h-BN insulating dielectric stacked layers, AlOx/TiOx resistive switching layer and ITO pillar electrode exhibits reliable device performance including forming-free, low power consumption (Pset = ~2 μW and Preset = ~0.2 μW), and large memory window (>300). The scanning transmission electron microscopy indicates that the thickness of multilayer h-BN is around 2 nm. Due to the ultrathin-insulating dielectric and naturally high thermal conductivity characteristics of h-BN, the vertical structure combining the graphene plane electrode with multilayer h-BN insulating dielectric can pave the way toward a new area of ultra high-density memory integration in the future.

Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

The resistive switching behaviors of AlO_X/HfO_X bilayer structures were investigated.

Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-Compliance

Programmable memory characteristics of electrodeposited CuO_x-based resistive random access memory (ReRAM) can be significantly improved by adopting a bilayer structure with a built-in current limiter. To control the on-current and enhance the device uniformity, the bilayer structure of Pt/CuO_x (switching layer)/CuO_x (current limiter)/Pt is proposed. This structure is synthesized by controlling solution pH during electrochemical deposition (ECD). The bilayer structure of Pt/CuO_x (synthesized at pH 9)/CuO_x (synthesized at pH 11.5)/Pt exhibits reliable and uniform self-compliant resistive switching behavior. The origin of resistive switching is attributed to formation and rupture of conductive filaments in the CuO_x (pH 9) layer. However, the CuO_x (pH 11.5) layer acts as the resistor without resistive switching to control the overall resistance in ReRAM. Reversible "on" and "off" switching occurs with a switching time of 100 ns. Devices based on the bilayer structure showed long data retention and good endurance. This simple use of ECD to improve the memory characteristics of electrodeposited ReRAM offers the opportunity to realize reliable and self-compliant memory devices with low-cost solution processes.

Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFy with AgF Nanoparticles

Low power consumption is crucial for the application of resistive random access memory. In this work, we present the bipolar resistive switching in an Ag/TiO_xF_y/Ti/Pt stack with extremely low switch-on voltage of 0.07 V. Operating current as low as 10 nA was also obtained by conductive atomic force microscopy. The highly defective TiO_xF_y layer was fabricated by plasma treatment using helium, oxygen, and carbon tetrafluoride orderly. During the electroforming process, AgF nanoparticles were formed due to the diffusion of Ag⁺ which reacted with the adsorbed F^- in the TiO_xF_y layer. These nanoparticles are of great importance to resistive switching performance because they are believed to be conductive phases and become part of the conducting path when the sample is switched to a low-resistance state.

Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications

A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior. A solution process is used to synthesize the copper oxide layer into 250-nm via-holes that had been patterned in Si wafers. Direct bottom-up filling of copper oxide can facilitate fabrication of nanoscale memory devices without using vacuum deposition and etching processes. In addition, all materials and processes are CMOS compatible, and especially, the devices can be fabricated at room temperature. Nanoscale memory devices synthesized on wafers having 250-nm via-holes showed reproducible resistive switching programmable memory characteristics with reasonable endurance and data retention properties. This integration strategy provides a solution to overcome the scaling limit of current memory device fabrication methods.