Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

Structural, Optical, and Magnetic Properties of Pure and Ni-Fe-Codoped Zinc Oxide Nanoparticles Synthesized by a Sol-Gel Autocombustion Method

Pure and Ni-Fe-codoped Zn1 - 2xNixFexO (x = 0.01, 0.02, 0.03, and 0.04) nanoparticles were effectively synthesized using a sol-gel autocombustion procedure. The structural, optical, morphological, and magnetic properties were determined by using X-ray diffraction (XRD), ultraviolet-visible (UV-vis), scanning electron microscopy, and vibrating sample magnetometer techniques. The XRD confirmed the purity of the hexagonal wurtzite crystal structure. XRD analysis further indicated that Fe and Ni successfully substituted the lattice site of Zn and generated a single-phase Zn1-2xNixFexO magnetic oxide. In addition, a significant morphological change was observed with an increase in the dopant concentration by using high-resolution scanning electron microscopy. The UV-vis spectroscopy analysis indicated the redshift in the optical band gap with increasing dopant concentration signifying a progressive decrease in the optical band gap. The vibrating sample magnetometer analysis revealed that the doped samples exhibited ferromagnetic properties at room temperature with an increase in the dopant concentration. Dopant concentration was confirmed by using energy-dispersive X-ray spectroscopy. The current results provide a vital method to improve the magnetic properties of ZnO nanoparticles, which may get significant attention from researchers in the field of magnetic semiconductors.

Expanded Tunability of Intraparticle Frameworks in Spherical Heterostructured Nanoparticles through Substoichiometric Partial Cation Exchange

Partial cation exchange reactions provide a synthetic pathway for rationally constructing heterostructured nanoparticles that incorporate different materials at precise locations. Multiple sequential partial cation exchange reactions can produce libraries of exceptionally complex heterostructured nanoparticles, but the first partial exchange reaction is responsible for defining the intraparticle frameworks that persist throughout and help to direct subsequent exchanges. Here, we studied the partial cation exchange behavior of spherical nanoparticles of roxbyite copper sulfide, Cu_1.8S, with substoichiometric amounts of Zn²⁺. We observed the formation of ZnS–Cu_1.8S–ZnS sandwich spheres, which are already well known in this system, as well as ZnS–Cu_1.8S Janus spheres and Cu_1.8S–ZnS–Cu_1.8S central band spheres, which have not been observed previously as significant subpopulations of samples. Aliquots taken during the formation of the heterostructured nanoparticles suggest that substoichiometric amounts of Zn²⁺ limit the number of sites per particle where exchange initiates and/or propagates, thereby helping to define intraparticle frameworks that are different from those observed using excess amounts of exchanging cations. We applied these insights from mixed-population samples to the higher-yield synthesis of ZnS–Cu_1.8S Janus spheres, as well as the higher-order derivatives ZnS–(CdS–Cu_1.8S), ZnS–(CdS–ZnS), and ZnS–(CdS–CoS), which have unique features relative to previously reported analogues. These results demonstrate how the diversity of intraparticle frameworks in spherical nanoparticles can be expanded to produce a broader range of downstream heterostructured products.

Plasmon-exciton coupling dynamics and plasmonic lasing in a core-shell nanocavity

Plasmonic nanolasers based on the spatial localization of surface plasmons (SPs) have attracted considerable interest in nanophotonics, particularly in the desired application of optoelectronic and photonic integration, even breaking the diffraction limit. Effectively confining the mode field is still a basic, critical and challenging approach to improve optical gain and reduce loss for achieving high performance of a nanolaser. Here, we designed and fabricated a semiconductor/metal (ZnO/Al) core-shell nanocavity without an insulator spacer by simple magnetron sputtering. Both theoretical and experimental investigations presented plasmonic lasing behavior and SP-exciton coupling dynamics. The simulation demonstrated the three-dimensional optical confinement of the light field in the core-shell nanocavity, while the experiments revealed a lower threshold of the optimized ZnO/Al core-shell nanolaser than the same-sized ZnO photonic nanolaser. More importantly, the blue shift of the lasing mode demonstrated the SP-exciton coupling in the ZnO/Al core-shell nanolaser, which was also confirmed by low-temperature photoluminescence (PL) spectra. The analysis of the Purcell factor and PL decay time revealed that SP-exciton coupling accelerated the exciton recombination rate and enhanced the conversion of spontaneous radiation into stimulated radiation. The results indicate an approach to design a real nanolaser for promising applications.

Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure

The highly sensitive ultra-violet (UV) photodiode was demonstrated on the organic-inorganic hybrid heterostructure of β-phase p-type polyfluorene (PFO)/n-type yttrium-doped zinc oxide nanorods (YZO-NRs). The device was fabricated through a simple fabrication technique of β-phase PFO coating onto YZO-NRs that had been directly grown on graphene by the hydrothermal synthesis method. Under UV illumination (λ = 365 nm), the device clearly showed excellent photoresponse characteristics (e.g., high quantum efficiency ~690%, high photodetectivity ~3.34 × 1012 cm·Hz1/2·W-1, and fast response time ~0.17 s). Furthermore, the ratio of the photo current-to-dark current exceeds 103 even under UV illumination with a small optical power density of 0.6 mW/cm2. We attribute such superb photoresponse characteristics to both Y incorporation into YZO-NRs and conformation of β-phase PFO. Namely, Y dopants could effectively reduce surface states at YZO-NRs, and β-phase PFO might increase the photocarrier conductivity in PFO. The results suggest that the β-phase p-PFO/n-YZO-NR hybrid heterostructure holds promise for high-performance UV photodetectors.

Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?

Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when the substrate is clearly not an epitaxial template. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide. We show how electric fields exerted by the insulating substrate may be manipulated through the surface charge to define the orientation and polarity of the nanowires. Surface charge is ubiquitous on the surfaces of semiconductors and insulators, and as a result, substrate electric fields need always be considered. Our results suggest a new concept, according to which the growth of wurtzite semiconductors may often be described as a process of electric-charge-induced self-assembly, wherein the internal built-in field in the polar material tends to align in parallel to an external field exerted by the substrate to minimize the interfacial energy of the system.

Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation

Recently, metal nanoparticle surface coatings have been found to significantly enhance the ultra-violet luminescence intensity from ZnO, providing a viable means to mitigate optical losses and improve LED performance. Although there is general agreement that resonantly excited Localized Surface Plasmons (LSPs) in metal nanoparticles can directly couple to excitons in the semiconductor increasing their spontaneous emission rate, the exact mechanisms involved in this phenomenon are currently not fully understood. In this work, LSP-exciton coupling in bulk and nanostructured ZnO coated with a 2 nm Al nanoparticle layer is investigated using correlative photoluminescence and depth-resolved cathodoluminescence and time-resolved photoluminescence spectroscopy. Temperature-resolved cathodoluminescence and photoluminescence measurements from 10 K to 250 K show free exciton (FX) emission enhancement factors up to 12x at 80 K, and reveal that the FX couple more efficiently to the LSPs compared to the localized donor-bound excitons. A strong polarization dependence between the LSPs and FX is observed where FX transitions are more strongly enhanced when polarized in the same direction as the electric field of the incident excitation, which is different for laser and electron beam sources. This result indicates that selective enhancement of the excitonic emission peaks in the ZnO coated with Al nanoparticles can be achieved by choosing the appropriate ZnO substrate orientation.

Enhanced ultraviolet electroluminescence from ZnO nanoparticles via decoration of partially oxidized Al layer

We construct the ZnO-based superluminescent light-emitting diodes (SLEDs) by spin-coating ZnO nano-particles onto p-GaN/sapphire substrate. By inserting another thin Al layer to form an n-ZnO/Al/n-ZnO/p-GaN sandwich structured SLD, the intensities of the photoluminescence and electroluminescence were greatly enhanced, which can be attributed to the surface plasmon resonance of this Al layer. The tendency of the intensities of the entire electroluminescence spectra shows a super-linearly behavior with increasing the forward bias. Besides, the spectral bandwidth is narrowed down enormously owing to the achievement of the SLD. Furthermore, the interfacial emissions between ZnO/GaN are effectively suppressed by partially oxidizing the Al layer.

Plasmonic-Enhanced Luminescence Characteristics of Microscale Phosphor Layers on a ZnO Nanorod-Arrayed Glass Substrate

We present a planar luminescent layer for glare-free, long-lifespan white light-emitting diodes (LEDs), with attractive light outputs. The novel and facile remote phosphor approach proposed in this work enhances luminescence properties by combining a waveguiding ZnO-based nanostructure with plasmonic Au nanoparticles. The system comprised a microscale yellow phosphor layer that is applied by simple printing onto an Au nanoparticle-dispersed ZnO nanorod array. This architecture resulted in a considerable enhancement in luminous efficacy of approximately 18% because of the combination of waveguide effects from the nanorod structure and plasmonic effects from the Au nanoparticles. Performance was optimized according to the length of the Zn nanorods and the concentration of Au. An optimal efficiency of ∼84.26 lm/W for a silicate phosphor-converted LED was achieved using long ZnO nanorods and an Au concentration of 12.5 ppm. The finite-difference time-domain method was successfully used to verify the luminous efficacy improvements in the Au nanoparticle-intervened nanostructures via the waveguiding and plasmonic effects.

Interface control for pure ultraviolet electroluminescence from nano-ZnO-based heterojunction devices

Realization of pure and stable ultraviolet electroluminescence (UV EL) of ZnO light-emitting diode (LED) is still a challenging issue, due to complicated defects of intrinsic ZnO and the corresponding device interfaces. In this paper, we demonstrated a simple & feasible method to fabricate n-ZnO/AlN/p-GaN heterojunctions light-emitting devices. First, the vertically aligned ZnO nanorods (NRs) have been prepared as high quality active layer, and the nanostructured heterojunction LED arrays were constructed by directly bonding ZnO NRs onto AlN-coated p-GaN wafer. By optimizing the AlN layer thickness to be 20 nm, a strong and pure ultraviolet emission located at 387 nm can be observed. The energy band alignment of n-ZnO/AlN (20 nm)/p-GaN heterojunction LED has been studied by using X-ray photoelectron spectroscopy (XPS), the valence band offset between AlN and GaN was calculated to be 0.34 eV. On the other side, the conduction band offset (as large as 3.28 eV) between AlN and ZnO can block the flow of electrons from ZnO to p-GaN. Thus, electron-hole recombination takes place in the ZnO layer, and a pure UV EL could be observed. Our results provide a significant approach toward future of pure ultraviolet optoelectronic LEDs.

Significant improvement of near-UV electroluminescence from ZnO quantum dot LEDs via coupling with carbon nanodot surface plasmons

Short-wavelength LEDs, a hot research topic in modern optoelectronics, have attracted tremendous attention in recent years because of their great application potential in both civil and military domains. Compared to conventional metallic surface-plasmons (SPs), carbon nanodot (CD) SPs with less optical loss and low cost, broader SP resonant frequency and good biocompatibility are expected to provide more prominent luminescence enhancement for light emitters. Herein, SP-enhanced near-UV emission quantum dot LEDs (Q-LED) were fabricated via introducing CDs into p-GaN/Al₂O₃/ZnO Q-LEDs by optimizing the molar ratio of ZnO quantum dots to CDs and a significant enhancement (∼20-fold) of the near-UV electroluminescence (EL) intensity from the ZnO-based Q-LEDs was achieved. Time-resolved spectroscopy studies reveal that the observed luminescence enhancement arises due to the resonant coupling between ZnO excitons and CD SPs. The current study not only demonstrates a feasible way to acquire near-UV emission from all-inorganic Q-LEDs, but also provides an effective strategy to enhance the EL intensity of these QD light emitters, which can further be extended to other types of light-emitting devices to improve EL efficiency.

Enhancement of external quantum efficiency and quality of heterojunction white LEDs by varying the size of ZnO nanorods

The size of ZnO nanorods (NRs) plays an important role in tuning the external quantum efficiency (EQE) and quality of light generated by white light emitting diodes (LEDs). In this work, we report on the enhancement of EQE and the quality of ZnO NR-based hetrojunction white LEDs fabricated on a p-GaN substrate using a low temperature solution method. Cathodoluminescence spectra demonstrate that ultraviolet (UV) emission decreases and visible deep band emission increases with an increase in the length of the ZnO NRs. The UV emission could be internally reabsorbed by the ZnO NR excitation, thus enhancing the emission intensity of the visible deep band. Photocurrent measurements validated the fact that the EQE depends on the size of ZnO NRs, increasing by 87% with an increase in the length of the ZnO NRs. Furthermore, the quality of white light was measured and clearly indicated an increase in the color rendering indices of the LEDs with an increase in the length of the ZnO NRs, confirming that the quality of light generated by LEDs can be tuned by varying the length of the ZnO NRs. These results suggest that the EQE and visible deep band emission from n-ZnONRs/p-GaN heterojunction LEDs can be effectively controlled by adjusting the length of the ZnO NRs, which can be useful for realizing tunable white LEDs.

ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

The ultraviolet luminescence of ZnO nanorods was greatly enhanced through introducing an AlN buffer layer.

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness

We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.