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Cecchini R, Gajjela RSR, Martella C, Wiemer C, Lamperti A, Nasi L, Lazzarini L, Nobili LG, Longo M. High-Density Sb 2 Te 3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901743. [PMID: 31222940 DOI: 10.1002/smll.201901743] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2019] [Revised: 05/17/2019] [Indexed: 06/09/2023]
Abstract
Sb2 Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency, topological insulator character, and phase change memory behavior. Improved performances are observed and novel effects are predicted for this and other chalcogenide alloys when synthetized in the form of high-aspect-ratio nanostructures. The ability to grow chalcogenide nanowires and nanopillars (NPs) with high crystal quality in a controlled fashion, in terms of their size and position, can boost the realization of novel thermoelectric, spintronic, and memory devices. Here, it is shown that highly dense arrays of ultrascaled Sb2 Te3 NPs can be grown by metal organic chemical vapor deposition (MOCVD) on patterned substrates. In particular, crystalline Sb2 Te3 NPs with a diameter of 20 nm and a height of 200 nm are obtained in Au-functionalized, anodized aluminum oxide (AAO) templates with a pore density of ≈5 × 1010 cm-2 . Also, MOCVD growth of Sb2 Te3 can be followed either by mechanical polishing and chemical etching to produce Sb2 Te3 NPs arrays with planar surfaces or by chemical dissolution of the AAO templates to obtain freestanding Sb2 Te3 NPs forests. The illustrated growth method can be further scaled to smaller pore sizes and employed for other MOCVD-grown chalcogenide alloys and patterned substrates.
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Affiliation(s)
| | - Raja S R Gajjela
- CNR-IMM, via C. Olivetti 2, 20864, Agrate Brianza, MB, Italy
- Dipartimento di Chimica, Materiali e Ingegneria Chimica "Giulio Natta,", Politecnico di Milano, Via Mancinelli 7, 20131, Milano, Italy
| | | | - Claudia Wiemer
- CNR-IMM, via C. Olivetti 2, 20864, Agrate Brianza, MB, Italy
| | | | - Lucia Nasi
- CNR-IMEM, Parco Area delle Scienze 37/A, 43124, Parma, Italy
| | - Laura Lazzarini
- CNR-IMEM, Parco Area delle Scienze 37/A, 43124, Parma, Italy
| | - Luca G Nobili
- Dipartimento di Chimica, Materiali e Ingegneria Chimica "Giulio Natta,", Politecnico di Milano, Via Mancinelli 7, 20131, Milano, Italy
| | - Massimo Longo
- CNR-IMM, via C. Olivetti 2, 20864, Agrate Brianza, MB, Italy
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Gurnani C, Hawken SL, Hector AL, Huang R, Jura M, Levason W, Perkins J, Reid G, Stenning GBG. Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films. Dalton Trans 2018; 47:2628-2637. [DOI: 10.1039/c7dt03848h] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Distorted octahedral complexes of Sn(iv) with thio- and seleno-ether ligands have been used as single source precursors in low pressure CVD experiments under various conditions to deposit tin mono and dichalcogenide thin films.
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Affiliation(s)
- Chitra Gurnani
- School of Natural Sciences
- Mahindra Ecole Centrale
- Hyderabad
- India
| | | | | | - Ruomeng Huang
- Electronic and Computer Science
- University of Southampton
- Southampton SO17 1BJ
- UK
| | - Marek Jura
- ISIS Neutron and Muon Source
- Rutherford Appleton Laboratory
- Harwell Science and Innovation Campus
- Didcot
- UK
| | | | - James Perkins
- Chemistry
- University of Southampton
- Southampton SO17 1BJ
- UK
| | - Gillian Reid
- Chemistry
- University of Southampton
- Southampton SO17 1BJ
- UK
| | - Gavin B. G. Stenning
- ISIS Neutron and Muon Source
- Rutherford Appleton Laboratory
- Harwell Science and Innovation Campus
- Didcot
- UK
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Sharifi T, Zhang X, Costin G, Yazdi S, Woellner CF, Liu Y, Tiwary CS, Ajayan P. Thermoelectricity Enhanced Electrocatalysis. NANO LETTERS 2017; 17:7908-7913. [PMID: 29116809 DOI: 10.1021/acs.nanolett.7b04244] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We show that thermoelectric materials can function as electrocatalysts and use thermoelectric voltage generated to initiate and boost electrocatalytic reactions. The electrocatalytic activity is promoted by the use of nanostructured thermoelectric materials in a hydrogen evolution reaction (HER) by the thermoelectricity generated from induced temperature gradients. This phenomenon is demonstrated using two-dimensional layered thermoelectric materials Sb2Te3 and Bi0.5Sb1.5Te3 where a current density approaching ∼50 mA/cm2 is produced at zero potential for Bi0.5Sb1.5Te3 in the presence of a temperature gradient of 90 °C. In addition, the turnover frequency reaches to 2.7 s-1 at 100 mV under this condition which was zero in the absence of temperature gradient. This result adds a new dimension to the properties of thermoelectric materials which has not been explored before and can be applied in the field of electrocatalysis and energy generation.
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Affiliation(s)
- Tiva Sharifi
- Department of Physics, Umeå University , SE-901 87 Umeå, Sweden
| | | | | | | | - Cristiano F Woellner
- Applied Physics Department, State University of Campinas , Campinas SP, 13083-970, Brazil
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