Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studied in depth. In this work, which considers the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands were calculated based on first principles calculations. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QD interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size of the Si-QD increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining a high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. This study deepens the understanding of the photoluminescence mechanism of Si-QDs, and provides a direction for both future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.

Luminescence mechanism in hydrogenated silicon quantum dots with a single oxygen ligand

Though photoluminescence (PL) of Si quantum dots (QDs) has been known for decades and both theoretical and experimental studies have been extensive, their luminescence mechanism has not been elaborated. Several models have been proposed to explain the mechanism. A deep insight into the origin of light emissions in Si QDs is necessary. This work calculated the ground- and excited state properties of hydrogenated Si QDs with various diameters, including full hydrogen passivation, single Si[double bond, length as m-dash]O ligands, single epoxide and coexisting Si[double bond, length as m-dash]O and epoxide structures in order to investigate the dominant contribution states for luminescence. The results revealed that even a single oxygen atom in hydrogenated Si QDs can dramatically change their electronic and optical properties. Intriguingly, we found that a size-independent emission, the strongest among all possible emissions, was induced by the single Si[double bond, length as m-dash]O passivated Si-QDs. In non-oxidized Si-QDs exhibiting a core-related size-tunable emission, the luminescence properties can be modulated by the ligands of Si QDs, and a very small number of oxygen ligands can strongly influence the luminescence of nanocrystalline silicon. Our findings deepen the understanding of the PL mechanism of Si QDs and can further promote the development of silicon-based optoelectronic devices.

Erbium emission in Er:Y2O3 decorated fractal arrays of silicon nanowires

Disordered materials with new optical properties are capturing the interest of the scientific community due to the observation of innovative phenomena. We present the realization of novel optical materials obtained by fractal arrays of silicon nanowires (NWs) synthesized at low cost, without mask or lithography processes and decorated with Er:Y2O3, one of the most promising material for the integration of erbium in photonics. The investigated structural properties of the fractal Er:Y2O3/NWs demonstrate that the fractal morphology can be tuned as a function of the sputtering deposition angle (from 5° to 15°) of the Er:Y2O3 layer. We demonstrate that by this novel approach, it is possible to simply change the Er emission intensity by controlling the fractal morphology. Indeed, we achieved the increment of Er emission at 560 nm, opening new perspectives on the control and enhancement of the optical response of novel disordered materials.

Influence of Oxidation on Temperature-Dependent Photoluminescence Properties of Hydrogen-Terminated Silicon Nanocrystals

In this study, we investigate temperature-dependent photoluminescence (PL) in three samples of hydrogen-terminated silicon nanocrystals (ncSi-H) with different levels of surface oxidation.ncSi-H was oxidized by exposure to ambient air for 0 h, 24 h, or 48 h. The PL spectra as a function of temperature ranging between room temperature (~297 K) and 4 K are measured to elucidate the underlying physics of the PL spectra influenced by the surface oxidation of ncSi-H. There are striking differences in the evolution of PL spectra according to the surface oxidation level. The PL intensity increases as the temperature decreases. ForncSi-H with a smaller amount of oxide, the PL intensity is nearly saturated at 90 K. In contrast, the PL intensity decreases even below 90 K for the heavilyoxidized ncSi-H. For all the samples, full-width at half maxima (FWHM)decreases as the temperature decreases. The plots of the PL peak energy as a function of temperature can be reproduced with an equation where the average phonon energy and other parameters are calculated.

White Light Emission from Fluorescent SiC with Porous Surface

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We report for the first time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fluorescent SiC) layer containing a hybrid structure. The surface of fluorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20 nm thick Al₂O₃, the photoluminescence intensity from the porous layer was significant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10 µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from the bulk fluorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460 nm and 530 nm. Such blue-green emission phenomenon can be attributed to neutral oxygen vacancies and interface C-related surface defects generated dring anodic oxidation process. Porous fluorescent SiC can offer a great flexibility in color rendering by changing the thickness of porous layer and bulk fluorescent layer. Such a novel approach opens a new perspective for the development of high performance and rare-earth element free white light emitting materials.

Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission

Light extraction from a thin planar layer can be increased by introducing a two-dimensional periodic pattern on its surface. This structure, the so-called photonic crystal (PhC) slab, then not only enhances the extraction efficiency of light but can direct the extracted emission into desired angles. Careful design of the structures is important in order to have a spectral overlap of the emission with extraction (leaky) modes. We show that by fabricating PhC slabs with optimized dimensions from silicon nanocrystals (SiNCs) active layers, the extraction efficiency of vertical light emission from SiNCs at a particular wavelength can be enhanced ∼ 11 times compared to that of uncorrugated SiNCs-rich layer. More importantly, increased light emission can be obtained in a broad spectral range and, simultaneously, the extracted light can stay confined within relatively narrow angle around the normal to the sample plane. We demonstrate experimentally and theoretically that the physical origin of the enhancement is such that light originating from SiNCs first couples to leaky modes of the PhCs and is then efficiently extracted into the surrounding.

Oxygen backed silicon hydride in correlation with the photoluminescence of silicon nano-crystals

Converting silicon hydride (–SiH) to oxygen backed silicon hydride (–OSiH) on porous silicon leads to a shift in the wavelength of photoluminescence (PL) maximum from 670 to 605 nm, corresponding to an increase of 0.2 eV on emission energy.