Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

Amperometric Highly Sensitive Phosphate Ion Sensor Based on the Electrochemically Modified Ni Electrode

We present a study of high-performance electrochemical phosphate sensors, which are exquisitely designed and easy to operate. We innovatively utilized the insolubility of nickel phosphate and developed a new type of sensor through electrochemical methods. The experiment first used cyclic voltammetry to determine -0.4 V as the optimal electrochemical modification potential and used constant potential electrodeposition technology to form a nickel oxide layer on the surface of the nickel electrode, which serves as the active layer in response to phosphate ions. The changes in the surface structure and chemical composition of the electrode before and after modification were thoroughly characterized by scanning electron microscopy and energy scattering spectroscopy analysis. The performance evaluation of the sensor shows that the modified nickel electrode has excellent responsiveness to phosphate ions in the concentration range of 10-7 to 10-10 mol/L, with a detection lower limit of 10-10 mol/L. As the concentration decreases, a shoulder peak appears at ∼0.63 V and the current change shows a regular increase. Compared with traditional detection methods, this sensor exhibits higher stability and practicality and is suitable for the rapid identification of phosphates in real samples. In summary, this study successfully developed a fast, sensitive, and wide response range current type electrochemical phosphate sensor, which has broad application prospects in environmental monitoring, water quality analysis, and biomedical fields.

An integrated wearable sticker based on extended-gate AlGaN/GaN high electron mobility transistors for real-time cortisol detection in human sweat

Cortisol hormone imbalances can be detected through non-invasive sweat monitoring using field-effect transistor (FET) biosensors, which provide rapid and sensitive detection. However, challenges like skin compatibility and integration with sweat collection have hindered FET biosensors as wearable sensing platforms. In this study, we present an integrated wearable sticker for real-time cortisol detection based on an extended-gate AlGaN/GaN high electron mobility transistor (HEMT) combined with a soft bottom substrate and flexible channel for sweat collection. The developed devices exhibit excellent linearity (R2 = 0.990) and a high sensitivity of 1.245 μA dec-1 for cortisol sensing from 1 nM to 100 μM in high-ionic-strength solution, with successful cortisol detection demonstrated using authentic human sweat samples. Additionally, the chip's microminiature design effectively reduces bending impact during the wearable process of traditional soft binding sweat sensors. The extendedgate structure design of the HEMT chip enhances both width-to-length ratio and active sensing area, resulting in an exceptionally low detection limit of 100 fM. Futhermore, due to GaN material's inherent stability, this device exhibits long-term stability with sustained performance within a certain attenuation range even after 60 days. These stickers possess small, lightweight, and portable features that enable real-time cortisol detection within 5 minutes through direct sweat collection. The application of this technology holds great potential in the field of personal health management, facilitating users to conveniently monitor their mental and physical conditions.

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.

A Comprehensive Review on Water Quality Monitoring Devices: Materials Advances, Current Status, and Future Perspective

Water quality monitoring has become more critical in recent years to ensure the availability of clean and safe water from natural aquifers and to understand the evolution of water contaminants across time and space. The conventional water monitoring techniques comprise of sample collection, preservation, preparation, tailed by laboratory testing and analysis with cumbersome wet chemical routes and expensive instrumentation. Despite the high accuracy of these methods, the high testing costs, laborious procedures, and maintenance associated with them don't make them lucrative for end end-users and field testing. As the participation of ultimate stakeholders, that is, common man for water quality and quantity can play a pivotal role in ensuring the sustainability of our aquifers, thus it is essential to develop and deploy portable and user-friendly technical systems for monitoring water sources in real-time or on-site. The present review emphasizes here on possible approaches including optical (absorbance, fluorescence, colorimetric, X-ray fluorescence, chemiluminescence), electrochemical (ASV, CSV, CV, EIS, and chronoamperometry), electrical, biological, and surface-sensing (SPR and SERS), as candidates for developing such platforms. The existing developments, their success, and bottlenecks are discussed in terms of various attributes of water to escalate the essentiality of water quality devices development meeting ASSURED criterion for societal usage. These platforms are also analyzed in terms of their market potential, advancements required from material science aspects, and possible integration with IoT solutions in alignment with Industry 4.0 for environmental application.

The Sensing Mechanism of InAlN/GaN HEMT

The sensing mechanism of InAlN/GaN high electron mobility transistors (HEMTs) is investigated systematically by numerical simulation and theoretical analysis. In detail, the influence of additional surface charge on device performance and the dependence of surface sensing properties on InAlN barrier thickness are studied. The results indicate that the saturation output drain current Idsat and two-dimensional electron gas (2DEG) concentration increase with the increase of positive surface charge density, which decrease with the increase of negative surface charge. The influence of negative surface charge on device performance is more remarkable than that of positive surface charge. Additionally, the modulation ability of surface charge on device performance increases with the decrease ofInAlN barrier thickness. The modulation of surface charge on device performance and the influence of barrier thickness on surface sensing sensitivity are mainly attributed to the variation of the energy band structure, surface potential and 2DEG concentration in the HEMT heterostructure. This work provides important support for structural optimization design of GaN-based HEMT sensors.

Ratiometric fluorescence sensor for sensitive detection of inorganic phosphate in environmental samples

Fast, simple, and low-cost on-site visualized detection of inorganic phosphate (Pi) is in great demand since phosphate is the major reason of eutrophication. In this work, a ratiometric fluorescent probe composed by green carbon dots (GCDs) and red carbon dots (RCDs) has been established for high-sensitivity and selective sensing of Pi. A trend of color change from red to green is observed for the detection of Pi under ultraviolet light and the detection limit is 0.09 μM in the range of 0 to 55 μM. Fluorescent test paper prepared from the probe solution was successfully applied to semi-quantitative visual detection of Pi in real-world water and soil samples, which shows great real-world application potentials.

Disposable paper-based PET fluorescence probe linked with calix[4]arene for lithium and phosphate ion detection

As a part of our ongoing research, we have synthesized a new fluorescence probe, p-C4A, based on a calix[4]arene substituted with 4-aminoquinoline moieties with amide linkages for lithium and phosphate ions.

Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review

Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade. A brief introduction of the FET sensor along with its construction and configuration is presented in the first part of this review. Subsequently, the FET sensor deployment issue and FET intrinsic limitation screening effect are also discussed, and the solutions to overcome these shortcomings are summarized. Later, we summarize the strategies for HMIs' electrical detection, mechanisms, and sensing performance on nanomaterial semiconductor FET transducers, including silicon, carbon nanotubes, graphene, AlGaN/GaN, transition metal dichalcogenides (TMD), black phosphorus, organic and inorganic semiconductor. Finally, concerns and suggestions regarding detection in the real samples using FET sensors are highlighted in the conclusion.

Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride

HYPOTHESIS

The properties of the oxidized surface for common materials, such as silicon and titanium, are known to be markedly different from the reduced surface. We hypothesize that surface-oxidized aluminum gallium nitride ((oxidized-AlGaN)/GaN) surface charge behavior is different to unoxidized AlGaN (with ultrathin native oxide only), which can be validated via surfactant adsorption. Understanding these differences will explain why (oxidized-AlGaN)/GaN-based sensors are better performing than AlGaN ones, which has been previously demonstrated but not understood.

EXPERIMENTS

The surface of an AlGaN/GaN structure was oxidized with hot piranha solution and oxygen plasma. AFM force measurements and imaging were performed to probe the charge properties of the surface in aqueous solutions of varying pH containing only an acid or base, or with an added ionic surfactant: cationic cetyltrimethylammonium bromide (CTAB) or anionic sodium dodecylsulfate (SDS).

FINDINGS

The (oxidized-AlGaN)/GaN surface is positively charged at pH 4 and pH 5.5, although pH 5.5 should be close to the isoelectric point of the surface. The surface is negatively charged at pH 10 and pH 12, and sufficiently charged to attract cooperative adsorption of CTAB aggregates at pH 12. At pH 2, the evidence is inconclusive, but the surface is most likely positively charged. Compared to unoxidized AlGaN, the (oxidized-AlGaN)/GaN surface shows a wider range of surface charge magnitude over pH values between 2 and 12. This suggests that the (oxidized-AlGaN)/GaN surface has a higher surface hydroxyl group density than unoxidized AlGaN, which explains the higher sensitivity for pH sensors based on (oxidized-AlGaN)/GaN structures.

Potentiometric Phosphate Ion Sensor Based on Electrochemical Modified Tungsten Electrode

Determination of phosphate ions in aqueous solutions attracts a great deal of interest in the areas of environment, medicine, and agriculture. As phosphoric acid is a poly basic acid, the different forms of existence at different pH result in direct determination facing a big challenge. Herein, we reported a potentiometric phosphate ion sensor based on a surface-modified tungsten electrode. Pure tungsten was electrodeposited at a constant potential of 0.2 V versus Ag|AgCl in Na2HPO4. WO3 and H3O40PW12·xH2O were electrodeposited on the surface of the tungsten electrode. The modified tungsten electrode was used as a working electrode in a two-electrode system to detect the concentration of phosphate ions in aqueous solutions. The detection limit of the modified tungsten electrode for phosphate ions is 10-6 M from pH 7 to pH 8 and 10-5 M from pH 9 to pH 10. It has good selectivity to other common anions. The long-term monitoring experiment showed that the potential fluctuation was less than ±3 mV in 24 h. Compared to conventional determination methods, the current phosphate ion sensor showed a close value in a real sample. The mechanism of phosphate ion response was investigated in detail. This sensor possesses advantages of simple manufacture, low cost, a wide pH range for detecting, and good selectivity.

In situ growth of nanoflake and nanoflower-like Ni hydrated hydroxide on the surface of Ni foam as a free-standing electrode for high-performance phosphate detection

Environmental pollution has always been a global concern, e.g. water eutrophication caused by the high concentrations of phosphorous. It is especially important to detect harmful substances conveniently, quickly and accurately. This study reports a free-standing electrode composed of Ni foam (NF) and in situ grown nanoflakes and nanoflower-like Ni hydrated hydroxide (NHH) on the NF surface (NHH/NF) by a one-step hydrothermal method for phosphate detection. The NHH/NF electrode was directly applied as a binder-free and conductive agent-free working electrode in a three electrode system and showed a wide linear detection range of 10-50,000 μM, high sensitivities of 210 and 87 μA mM^-1 cm^-2 for the phosphate concentration ranges of 10-14,000 and 14,000-50,000 μM, respectively, and a fast response time of 6 s for phosphate detection in a NaOH solution (pH≈11). The nanostructure of the NHH layer not only provided a large surface area and rapid electron transfer but also protected the NF substrate from being degraded by the electrolyte and interfering species, thereby achieving good stability and selectivity. In addition, for artificial and real wastewater detection, the good recover ability presented here improves the prospects of developing a cost-effective, simple, and accurate sensor for phosphate detection.

Spinel Cobalt Ferrite Nanoparticles for Sensing Phosphate Ions in Aqueous Media and Biological Samples

Phosphate ions perform a variety of functions in metabolic processes and are essential for all living organisms. The determination of the concentration of phosphate ions is useful in clinical diagnosis of various diseases as an inadequate phosphate level could lead to many health problems. In the search for a cost-effective method of fast monitoring, we investigated the use of cobalt ferrite nanoparticles (CoFeNPs) in the selective recognition of phosphate ions dissolved in aqueous media and more complex samples, such as human blood serum. We prepared these NPs by a chemical coprecipitation route and subjected them to annealing at 600 °C for 1 h. The successful formation of the NPs was confirmed by Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, and hysteresis loop measurements. The NPs exhibited a ferrimagnetic behavior, a spinel-type crystalline structure, and hexagonal shape in the nanoscale range. We demonstrated that CoFeNPs containing immobilized fluorescent-labeled single-chain DNA (ssDNA*) probes can be applied for the fast selective detection of phosphate ions dissolved in a liquid medium. We have explored the fact that phosphate groups can displace ssDNA* probes attached to the nanoparticles, therefore causing a perceptible change in the fluorescence signal of the supernatant liquid. This detection method has been tested for the sensing of phosphate ions present both in aqueous solutions and in biological samples, with excellent selectivity and a low limit of detection (∼1.75 nM).

An effective hydroxylation route for a highly sensitive glucose sensor using APTES/GOx functionalized AlGaN/GaN high electron mobility transistor

A highly sensitive glucose sensor based on AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated. The hydroxyl groups on the GaN surface were achieved by the decomposition of hydrogen peroxide solution (H₂O₂) under UV irradiation for the production of hydroxyl radicals. The self-assembled monolayers (SAMs) of 3-aminopropyltriethoxysilane (APTES) with terminal amino groups formed on the hydroxylation surface were used as substrates for glucose oxidase (GOx) immobilization. The chemical groups on the GaN surface after hydroxylation were confirmed by X-ray photoelectron spectroscopy. From the analysis of current signals, the biosensor constructed with APTES/GOx exhibited good current response to glucose over a linear range from 10 to 100 µM with a sensitivity of 3.15 × 10⁴ µA mM⁻¹ cm⁻² and a detection limit of 10 nM. Meanwhile, the anticipated idea about the hydroxylation of GaN surface, can be an efficient approach for the design of AlGaN/GaN HEMT based biosensors in the future.

A highly sensitive glucose sensor based on AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated.

Development of a nickel oxide/oxyhydroxide-modified printed carbon electrode as an all solid-state sensor for potentiometric phosphate detection

This work describes the preparation, characterization and use of a nickel oxide/oxyhydroxide-printed carbon electrode as an efficient potentiometric phosphate sensor.

Europium-Based Metal-Organic Framework as a Dual Luminescence Sensor for the Selective Detection of the Phosphate Anion and Fe3+ Ion in Aqueous Media

A new three-dimensional europium-based metal-organic framework has been synthesized with the newly designed ligand L (6-[1-(4-carboxyphenyl)-1 H-1,2,3-triazol-4-yl]nicotinic acid). This compound acts as a dual sensor for the phosphate anion and Fe³⁺ ion in aqueous media. The mechanistic aspect of this selectivity and sensitivity was explored through several spectroscopic methods and then correlated with the corresponding structure.

Molecular recognition by synthetic receptors: Application in field-effect transistor based chemosensing

Molecular recognition, i.e., ability of one molecule to recognize another through weak bonding interactions, is one of the bases of life. It is often implemented to sensing systems of high merits. Preferential recognition of the analyte (guest) by the receptor (host) induces changes in physicochemical properties of the sensing system. These changes are measured by using suitable signal transducers. Because of possibility of miniaturization, fast response, and high sensitivity, field-effect transistors (FETs) are more frequently being used for that purpose. A FET combined with a biological material offers the potential to overcome many challenges approached in sensing. However, low stability of biological materials under measurement conditions is a serious problem. To circumvent this problem, synthetic receptors were integrated with the gate surface of FETs to provide robust performance. In the present critical review, the approach utilized to devise chemosensors integrating synthetic receptors and FET transduction is discussed in detail. The progress in this field was summarized and important outcome was provided.