Gate dependence of upper critical field in superconducting (110) LaAlO3/SrTiO3 interface

On the Superconducting Critical Temperature of Heavily Disordered Interfaces Hosting Multi-Gap Superconductivity

LaAlO3/SrTiO3 interfaces are a nice example of a two-dimensional electron gas, whose carrier density can be varied by top- and back-gating techniques. Due to the electron confinement near the interface, the two-dimensional band structure is split into sub-bands, and more than one sub-band can be filled when the carrier density increases. These interfaces also host superconductivity, and the interplay of two-dimensionality, multi-band character, with the possible occurrence of multi-gap superconductivity and disorder calls for a better understanding of finite-bandwidth effects on the superconducting critical temperature of heavily disordered multi-gap superconductors.

A possible superconductor-like state at elevated temperatures near metal electrodes in an LaAlO3/SrTiO3 interface

We experimentally investigated the transport properties near metal electrodes installed on a conducting channel in a LaAlO3/SrTiO3 interface. The local region around the Ti and Al electrodes has a higher electrical conductance than that of other regions, where the upper limits of the temperature and magnetic field can be well defined. Beyond these limits, the conductance abruptly decreases, as in the case of a superconductor. The samples with the Ti- or Al-electrode have an upper-limit temperature of approximately 4 K, which is 10 times higher than the conventional superconducting critical temperature of LaAlO3/SrTiO3 interfaces and delta-doped SrTiO3. This phenomenon is explained by the mechanism of electron transfer between the metal electrodes and electronic d-orbitals in the LaAlO3/SrTiO3 interface. The transferred electrons trigger a phase transition to a superconductor-like state. Our results contribute to the deep understanding of the superconductivity in the LaAlO3/SrTiO3 interface and will be helpful for the development of high-temperature interface superconductors.

Formation of Two-dimensional Electron Gas at Amorphous/Crystalline Oxide Interfaces

Experimentally, we found the percentage of low valence cations, the ionization energy of cations in film, and the band gap of substrates to be decisive for the formation of two-dimensional electron gas at the interface of amorphous/crystalline oxide (a-2DEG). Considering these findings, we inferred that the charge transfer from the film to the interface should be the main mechanism of a-2DEG formation. This charge transfer is induced by oxygen defects in film and can be eliminated by the electron-absorbing process of cations in the film. Based on this, we propose a simple dipole model that successfully explains the origin of a-2DEG, our experimental findings, and some important properties of a-2DEG.