Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.

Voltage-Tunable Ultra-Steep Slope Atomic Switch with Selectivity over 1010

Atomic switch-based selectors, which utilize the formation of conductive filaments by the migration of ions, are researched for cross-point array architecture due to their simple structure and high selectivity. However, the difficulty in controlling the formation of filaments causes uniformity and reliability issues. Here, a multilayer selector with Pt/Ag-doped ZnO/ZnO/Ag-doped ZnO/Pt structure by the sputtering process is presented. A multilayer structure enables control of the filament formation by preventing excessive influx of Ag ions. The multilayer selector device exhibits a high on-current density of 2 MA cm^-2 , which can provide sufficient current for the operation with the memory device. Also, the device exhibits high selectivity of 10¹⁰ and a low off-current of 10^-13 A. The threshold voltage of selector devices can be controlled by modulating the thickness of the ZnO layer. By connecting a multilayer selector device to a resistive switching memory, the leakage current of the memory device can be reduced. These results demonstrate that a multilayer structure can be used in a selector device to improve selectivity and reliability for use in high-density memory devices.

Covalent bonding-assisted nanotransfer lithography for the fabrication of plasmonic nano-optical elements

Many high-resolution patterning techniques have been developed to realize nano- and microscale applications of electric devices, sensors, and transistors. However, conventional patterning methods based on photo or e-beam lithography are not employed to fabricate optical elements of high aspect ratio and a sub-100 nm scale due to the limit of resolution, high costs and low throughput. In this study, covalent bonding-assisted nanotransfer lithography (CBNL) was proposed to fabricate various structures of high resolution and high aspect ratio at low cost by a robust and fast chemical reaction. The proposed process is based on the formation of covalent bonds between silicon of adhesive layers on a substrate and oxygen of the deposited material on the polymer stamp. The covalent bond is strong enough to detach multiple layers from the stamp for a large area without defects. The obtained nanostructures can be used for direct application or as a hard mask for etching. Two nano-optical applications were demonstrated in this study, i.e., a meta-surface and a wire-grid polarizer. A perfect absorption meta-surface was generated by transferring subwavelength hole arrays onto a substrate without any post-processing procedures. In addition, a wire-grid polarizer with high aspect ratio (1 : 3) and 50 nm line width was prepared by the nano-transfer of materials, which were used as a hard mask for etching. Therefore, CBNL provides a means of achieving large-area nano-optical elements with a simple roll-to-plate process at low cost.

A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH₃ NH₃ PbI₃ layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10⁵ s. Moreover, the use of sequential vapor deposition is extended to deposit CH₃ NH₃ PbI₃ as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.

Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

The resistive switching behaviors of AlO_X/HfO_X bilayer structures were investigated.

Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-Compliance

Programmable memory characteristics of electrodeposited CuO_x-based resistive random access memory (ReRAM) can be significantly improved by adopting a bilayer structure with a built-in current limiter. To control the on-current and enhance the device uniformity, the bilayer structure of Pt/CuO_x (switching layer)/CuO_x (current limiter)/Pt is proposed. This structure is synthesized by controlling solution pH during electrochemical deposition (ECD). The bilayer structure of Pt/CuO_x (synthesized at pH 9)/CuO_x (synthesized at pH 11.5)/Pt exhibits reliable and uniform self-compliant resistive switching behavior. The origin of resistive switching is attributed to formation and rupture of conductive filaments in the CuO_x (pH 9) layer. However, the CuO_x (pH 11.5) layer acts as the resistor without resistive switching to control the overall resistance in ReRAM. Reversible "on" and "off" switching occurs with a switching time of 100 ns. Devices based on the bilayer structure showed long data retention and good endurance. This simple use of ECD to improve the memory characteristics of electrodeposited ReRAM offers the opportunity to realize reliable and self-compliant memory devices with low-cost solution processes.