Highly efficient metallic optical incouplers for quantum well infrared photodetectors

Resonance-Enhanced Quantum Well Micropillar Array with Ultra-Narrow Bandwidth and Ultra-High Peak Quantum Efficiency

Infrared cameras with narrow-band detection capability are widely used for SF6 gas detection, which is an essential part of power equipment inspection. Narrow-band detection is usually achieved by a combination of quantum well infrared photodetectors (QWIPs) and narrow-band filters. Improving the quantum efficiency of QWIPs and reducing the detection bandwidth are important ways to improve camera performance. In this study, a back-incident-type device of quantum well micropillar array targeting at a 10.5 μm central wavelength is designed and studied by three-dimensional simulation. The operating mechanism of the device was determined by investigating the effect of the device geometry on the quantum efficiency. The enhanced absorption capability of the device mainly comes from the Fabry–Pérot resonance and the antireflection effect. The final device exhibits a remarkable peak quantum efficiency of 83% at 10.5 μm and an ultra-narrow spectral bandwidth of 0.2 μm. These excellent properties are achieved without an antireflective film and narrow-band filter, which can significantly improve the narrow-band capability and integration of the system; the dark current reduces to be 0.2762 times due to the low-duty cycle. These properties indicate that the structure of the quantum well micropillar array is of great significance to the development of QWIPs used in gas detection.

Stacked Dual-Band Quantum Well Infrared Photodetector Based on Double-Layer Gold Disk Enhanced Local Light Field

We propose a stacked dual-band quantum well infrared photodetector (QWIP) integrated with a double-layer gold disk. Two 10-period quantum wells (QW) operating at different wavelengths are stacked together, and gold nano-disks are integrated on their respective surfaces. Numerical calculations by finite difference time domain (FDTD) showed that the best enhancement can be achieved at 13.2 and 11.0 µm. By integrating two metal disks, two plasmon microcavity structures can be formed with the substrate to excite localized surface plasmons (LSP) so that the vertically incident infrared light can be converted into electric field components perpendicular to the growth direction of the quantum well (E_Z). The E_Z electric field component can be enhanced up to 20 times compared to the incident light, and it is four times that of the traditional two-dimensional hole array (2DHA) grating. We calculated the enhancement factor and coupling efficiency of the device in the active region of the quantum well. The enhancement factor of the active region of the quantum well on the top layer remains above 25 at the wavelength of 13.2 μm, and the enhancement factor can reach a maximum of 45. Under this condition, the coupling efficiency of the device reaches 2800%. At the wavelength of 11.0 μm, the enhancement factor of the active region of the quantum well at the bottom is maintained above 6, and the maximum can reach about 16, and the coupling efficiency of the device reaches 800%. We also optimized the structural parameters and explored the influence of structural changes on the coupling efficiency. When the radius (r₁, r₂) of the two metal disks increases, the maximum coupling efficiency will be red-shifted as the wavelength increases. The double-layer gold disk structure we designed greatly enhances the infrared coupling of the two quantum well layers working at different wavelengths in the dual-band quantum well infrared photodetector. The structure we designed can be used in stacked dual-band quantum well infrared photodetectors, and the active regions of quantum wells working at two wavelengths can enhance the photoelectric coupling, and the enhancement effect is significant. Compared with the traditional optical coupling structure, the structure we proposed is simpler in process and has a more significant enhancement effect, which can meet the requirements of working in complex environments such as firefighting, night vision, and medical treatment.

Absorption enhancement in all-semiconductor plasmonic cavity integrated THz quantum well infrared photodetectors

The light coupling properties of all-semiconductor plasmonic cavity integrated THz quantum well infrared photodetectors were studied for absorption enhancement of the quantum wells. The all-semiconductor plasmonic cavity is constructed by heavily doped GaAs with a plasmonic behavior in the THz regime. The plasmonic behavior of GaAs was thoroughly studied by taking into account the carrier density dependent effective mass of electrons. An optimal doping level for GaAs to be the most metallic is selected since the plasma frequency of the doped GaAs varies nonmonotonically with the carrier density. By tuning the absorption competition between the quantum wells and the doped GaAs meanwhile keeping the system at a critical coupling status, the absorptance of the quantum wells is prominently enhanced by 13.2 times compared to that in a standard device. The all-semiconductor plasmonic cavity integrated quantum well photodetectors can be polarization sensitive (polarization extinction ratio > 900) when the plasmonic cavity is shaped into an anisotropic form. The good tolerance of the incident angle is favored for wide-field infrared detection. The GaAs plasmonic cavities are demonstrated to be effective when integrated at a pixel level, indicating a good compatibility with focal plane arrays.