Large spin-orbit coupling and helical spin textures in 2D heterostructure [Pb2BiS3][AuTe2]

Generalized Ab Initio Nonadiabatic Dynamics Simulation Methods from Molecular to Extended Systems

Nonadiabatic dynamics simulation has become a powerful tool to describe nonadiabatic effects involved in photophysical processes and photochemical reactions. In the past decade, our group has developed generalized trajectory-based ab initio surface-hopping (GTSH) dynamics simulation methods, which can be used to describe a series of nonadiabatic processes, such as internal conversion, intersystem crossing, excitation energy transfer and charge transfer of molecular systems, and photoinduced nonadiabatic carrier dynamics of extended systems with and without spin-orbit couplings. In this contribution, we will first give a brief introduction to our recently developed methods and related numerical implementations at different computational levels. Later, we will present some of our latest applications in realistic systems, which cover organic molecules, biological proteins, organometallic compounds, periodic organic and inorganic materials, etc. Final discussion is given to challenges and outlooks of ab initio nonadiabatic dynamics simulations.

2D weak anti-localization in thin films of the topological semimetal Pd[Formula: see text]Bi[Formula: see text]S[Formula: see text]

Pd[Formula: see text]Bi[Formula: see text]S[Formula: see text] (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can't be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.

Weak Antilocalization at the Atomic-Scale Limit of Metal Film Thickness

Creation of the 2D metallic layers with the thickness as small as a few atomic layers and investigation of their properties are interesting and challenging tasks of the modern condensed-matter physics. One of the possible ways to grow such layers resides in the synthesis of the so-called metal-induced reconstructions on silicon (i.e., silicon substrates covered with ordered metal films of monolayer or submonolayer thickness). The 2D Au-Tl compound on Si(111) surface having [Formula: see text] periodicity belongs to the family of the reconstructions incorporating heavy-metal atoms with a strong spin-orbit coupling (SOC). In such systems, strong SOC results in the spin-splitting of surface-state bands due to the Rashba effect, the occurrence of which was experimentally proved. Another remarkable consequence of a strong SOC that manifests itself in the transport properties is a weak antilocalization (WAL) effect, which has never been explored in the metal layers of atomic thickness. In the present study, the transport and magnetotransport properties of the 2D Au-Tl compound on Si(111) surface were investigated at low temperatures down to ∼2.0 K. The compound was proved to show behavior of the 2D nearly free electron gas system with metallic conduction, as indicated by Ioffe-Regel criterion. It demonstrates the WAL effect which is interpreted in the framework of Hikami-Larkin-Nagaoka theory, and possible mechanisms of the electron decoherence are discussed. Bearing in mind that besides the (Au, Tl)/Si(111)[Formula: see text] system, there are many other ordered atomic-layer metal films on silicon differing by composition, structure, strength of SOC, and spin texture, which provide a promising area for prospective investigations of the WAL effect at the atomic-scale limit when the film thickness is less than the electron wavelength.

Quantum contributions to the magnetoconductivity of critically disordered superconducting TiN films

The onset of superconductivity in the presence of disorder is a fundamental problem of condensed matter physics. Here we investigate the magnetoconductance of disordered ([Formula: see text]) superconducting TiN films above the critical temperature T _c. We show that the magnetoconductivity of moderately disordered films with [Formula: see text] is in full agreement with the perturbative theory of quantum contributions to conductivity. We demonstrate that the magnetoconductivity of films with [Formula: see text] is also in agreement with the perturbative theory down to temperatures [Formula: see text]. The quantitative discrepancy between experiment and theory develops only below temperatures [Formula: see text] for films with [Formula: see text]. This discrepancy can be eliminated if we assume steeper temperature dependence of the Larkin's electron-electron attraction strength, [Formula: see text]. The obtained temperature dependence of electron phase breaking time [Formula: see text] is in agreement with theoretical predictions for all samples.