Multi-Terminal Spin Valve on Channels with Spin-Momentum Locking

Tunable asymmetric magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 lateral spin valve

van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising Fe3GeTe2 (FGT)/graphite/FGT. In contrast to traditional spin valves governed by the magnetization configurations of ferromagnetic electrodes (FEs), this distinct feature can be attributed to the interaction between FGT and the FGT/graphite interface, which is primarily influenced by the internal spin-momentum locking effect. Furthermore, modulation of the MR behavior is accomplished by employing the coupling between antiferromagnetic and ferromagnetic materials to adjust the coercive fields of two FEs subsequent to the in situ growth of an FGT oxide layer on FGT. This study elucidates the device physics and mechanism of property modulation in lateral spin valves and holds the potential for advancing the development of gate-tunable spintronic devices and next-generation integrated circuits.

Spin-momentum locking induced non-local voltage in topological insulator nanowire

The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit an asymmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual asymmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.

Electric Control of Fermi Arc Spin Transport in Individual Topological Semimetal Nanowires

The exotic topological surface states of Dirac or Weyl semimetals, namely Fermi arcs, are predicted to be spin polarized, while their spin polarization nature is still not revealed by transport measurements. Here, we report the spin-polarized transport in a Dirac semimetal Cd_{3}As_{2} nanowire employing the ferromagnetic electrodes for spin detection. The spin-up and spin-down states can be changed by reversing the current polarity, showing the spin-momentum locking property. Moreover, the nonlocal measurements show a high fidelity of the spin signals, indicating the topological protection nature of the spin transport. As tuning the Fermi level away from the Dirac point by gate voltages, the spin signals gradually decrease and finally are turned off, which is consistent with the fact that the Fermi arc surface state has the maximum ratio near the Dirac point and disappears above the Lifshitz transition point. Our results should be valuable for revealing the transport properties of the spin-polarized Fermi arc surface states in topological semimetals.

Edelstein and inverse Edelstein effects caused by the pristine surface states of topological insulators

The Edelstein effect caused by the pristine surface states of three-dimensional topological insulators is investigated by means of a semiclassical approach. The combined effect of random impurity scattering and the spin-momentum locking of the gapless Dirac cone yields a current-induced surface spin accumulation that depends on the surface cleanliness, but is independent from chemical potential and temperature. Through combing the semiclassical approach with the Bloch equation, the inverse Edelstein effect that converts the spin pumping spin current into a charge current is well explained, and the conversion efficiency [Formula: see text] is revealed to be independent from the disorder. Consistency of these results with various experiments is elaborated in detail.

Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states

In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (R_P) and antiparallel (R_AP) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., R_AP(1) > R_P > R_AP(2), up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm.