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Fu K, Fu J, Qin F, Gao X, Ye Z, Liu P, Wang Y. Multilevel Simultaneous Lighting-Imaging System. ACS OMEGA 2023; 8:19987-19993. [PMID: 37305297 PMCID: PMC10249127 DOI: 10.1021/acsomega.3c02072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 05/12/2023] [Indexed: 06/13/2023]
Abstract
In a III-nitride multiple quantum well (MQW) diode biased with a forward voltage, electrons recombine with holes inside the MQW region to emit light; meanwhile, the MQW diode utilizes the photoelectric effect to sense light when higher-energy photons hit the device to displace electrons in the diode. Both the injected electrons and the liberated electrons are gathered inside the diode, thereby giving rise to a simultaneous emission-detection phenomenon. The 4 × 4 MQW diodes could translate optical signals into electrical ones for image construction in the wavelength range from 320 to 440 nm. This technology will change the role of MQW diode-based displays since it can simultaneously transmit and receive optical signals, which is of crucial importance to the accelerating trend of multifunctional, intelligent displays using MQW diode technology.
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Affiliation(s)
- Kang Fu
- Grünberg
Research Centre, Nanjing University of Posts
and Telecommunications, Nanjing 210003, China
| | - Jianwei Fu
- Grünberg
Research Centre, Nanjing University of Posts
and Telecommunications, Nanjing 210003, China
| | - Feifei Qin
- Grünberg
Research Centre, Nanjing University of Posts
and Telecommunications, Nanjing 210003, China
| | - Xumin Gao
- Grünberg
Research Centre, Nanjing University of Posts
and Telecommunications, Nanjing 210003, China
| | - Ziqi Ye
- Grünberg
Research Centre, Nanjing University of Posts
and Telecommunications, Nanjing 210003, China
| | - Pengzhan Liu
- Grünberg
Research Centre, Nanjing University of Posts
and Telecommunications, Nanjing 210003, China
| | - Yongjin Wang
- GaN Optoelectronic Integration International Cooperation Joint Laboratory
of Jiangsu Province, Nanjing University
of Posts and Telecommunications, Nanjing 210003, China
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Segura-Ruiz J, Salomon D, Rogalev A, Eymery J, Alén B, Martínez-Criado G. Spatially and Time-Resolved Carrier Dynamics in Core-Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire. NANO LETTERS 2021; 21:9494-9501. [PMID: 34762425 DOI: 10.1021/acs.nanolett.1c02760] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Time-resolved cathodoluminescence is a key tool with high temporal and spatial resolution. However, optical spectroscopic information can be also extracted using synchrotron pulses in a hard X-ray nanoprobe, exploiting a phenomenon called X-ray excited optical luminescence. Here, with 20 ps time resolution and 80 nm lateral resolution, we applied this time-resolved X-ray microscopy technique to individual core-shell InGaN/GaN multiple quantum well heterostructures deposited on GaN wires. Our findings suggest that the m-plane related multiple quantum well states govern the carrier dynamics. Likewise, our observations support not only the influence of In incorporation in the recombination rates, but also carrier localization phenomena at the hexagon wire apex. In addition, our experiment calls for further investigations of the spatiotemporal domain on the underlying mechanisms of optoelectronic nanodevices. Its great potential becomes more valuable when time-resolved X-ray excited optical luminescence microscopy is used in operando with other methods, such as X-ray absorption spectroscopy.
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Affiliation(s)
| | - Damien Salomon
- European Synchrotron Radiation Facility, 38043-Grenoble, France
| | - Andrei Rogalev
- European Synchrotron Radiation Facility, 38043-Grenoble, France
| | - Joël Eymery
- Univ. Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France
| | - Benito Alén
- Instituto de Micro y Nanotecnología, Consejo Superior de Investigaciones Científicas, 28760 Tres Cantos, Spain
| | - Gema Martínez-Criado
- European Synchrotron Radiation Facility, 38043-Grenoble, France
- Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Cantoblanco, Spain
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Al-Abri R, Choi H, Parkinson P. Measuring, controlling and exploiting heterogeneity in optoelectronic nanowires. JPHYS PHOTONICS 2021. [DOI: 10.1088/2515-7647/abe282] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022] Open
Abstract
Abstract
Fabricated from ZnO, III-N, chalcogenide-based, III-V, hybrid perovskite or other materials, semiconductor nanowires offer single-element and array functionality as photovoltaic, non-linear, electroluminescent and lasing components. In many applications their advantageous properties emerge from their geometry; a high surface-to-volume ratio for facile access to carriers, wavelength-scale dimensions for waveguiding or a small nanowire-substrate footprint enabling heterogeneous growth. However, inhomogeneity during bottom-up growth is ubiquitous and can impact morphology, geometry, crystal structure, defect density, heterostructure dimensions and ultimately functional performance. In this topical review, we discuss the origin and impact of heterogeneity within and between optoelectronic nanowires, and introduce methods to assess, optimise and ultimately exploit wire-to-wire disorder.
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Pan C, Zhai J, Wang ZL. Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires. Chem Rev 2019; 119:9303-9359. [PMID: 31364835 DOI: 10.1021/acs.chemrev.8b00599] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.
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Affiliation(s)
- Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.,School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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5
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Broadband photon squeezing control using microring embedded gold grating for LiFi-quantum link. SN APPLIED SCIENCES 2019. [DOI: 10.1007/s42452-019-0487-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022] Open
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Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer. NANOMATERIALS 2018; 8:nano8070512. [PMID: 29987245 PMCID: PMC6071233 DOI: 10.3390/nano8070512] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 06/28/2018] [Accepted: 07/07/2018] [Indexed: 11/28/2022]
Abstract
We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from 10.4% to 0% along the growth direction. The light intensity of the LED with a graded indium composition p-InGaN layer is 13.7% higher than that of conventional LEDs according to the experimental result. The calculated data further confirmed that the graded indium composition p-InGaN layer can effectively improve the light power of green LEDs. According to the simulation, the increase in light output power of green LEDs with a graded indium composition p-InGaN layer was mainly attributed to the enhancement of hole injection and the improvement of the radiative recombination rate.
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Chouksey S, Sankaranarayanan S, Pendem V, Saha PK, Ganguly S, Saha D. Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy. NANO LETTERS 2017; 17:4596-4603. [PMID: 28735539 DOI: 10.1021/acs.nanolett.7b00970] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Here, we have demonstrated strong size dependency of quasi-equilibrium and nonequilibrium carrier and photon dynamics in InGaN/GaN single nanowalls using photoluminescence and transient absorption spectroscopy. We demonstrate that two-dimensional carrier confinement, strain relaxation, and modified density of states lead to a reduced Stokes shift, smaller full width at half-maxima, increased exciton binding energy, and reduced nonradiative recombination. The ultrafast transient spectroscopy shows that carrier capture is a two-step process dominated by optical phonons and carrier-carrier scattering in succession. The carrier capture is a strongly size-dependent process and becomes slower due to modulation of the density of available states for progressively decreasing nanowall sizes. The slowest process is the electron-hole recombination, which is also extremely size-dependent and the rate increases by almost an order of magnitude in comparison to that of quantum-well structures. Electron-hole wave function overlap and modified density of states are among the key aspects in determining all the properties of these structures.
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Affiliation(s)
- S Chouksey
- Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay , Powai, Mumbai, 400076, India
| | - S Sankaranarayanan
- Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay , Powai, Mumbai, 400076, India
| | - V Pendem
- Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay , Powai, Mumbai, 400076, India
| | - P K Saha
- Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay , Powai, Mumbai, 400076, India
| | - S Ganguly
- Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay , Powai, Mumbai, 400076, India
| | - D Saha
- Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay , Powai, Mumbai, 400076, India
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Abstract
GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved. We conducted transient optical measurements to study the carrier dynamics of Mn-doped GaN. The lifetime of carriers in the Mn-related intermediate bands (at 1.5 eV above the valence band edge) is around 1.7 ns. The carrier relaxation within the Mn-induced bandtail states was on the order of a few hundred picoseconds. The relaxation times of different states are important parameters for optimization of conversion efficiency for intermediate-band solar cells.
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