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Li C, Wang L, Xu L, Ren X, Yao F, Lu J, Wang D, Liang Z, Huang P, Wu S, Jing H, Zhang Y, Dong G, Liu H, Ma C, Lyu Y, Wei X, Ren W, Wang K, Ye ZG, Chen F. Mn-inlaid antiphase boundaries in perovskite structure. Nat Commun 2024; 15:6735. [PMID: 39112446 PMCID: PMC11306794 DOI: 10.1038/s41467-024-51024-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2024] [Accepted: 07/23/2024] [Indexed: 08/10/2024] Open
Abstract
Improvements in the polarization of environmentally-friendly perovskite ferroelectrics have proved to be a challenging task in order to replace the toxic Pb-based counterparts. In contrast to common methods by complex chemical composition designs, we have formed Mn-inlaid antiphase boundaries in Mn-doped (K,Na)NbO3 thin films using pulsed laser deposition method. Here, we observed that mono- or bi-atomic layer of Mn has been identified to inlay along the antiphase boundaries to balance the charges originated from the deficiency of alkali ions and to induce the strain in the KNN films. Thus, rectangular saturated polarization-electric field hysteresis loops have been achieved, with a significantly improved twice remanent polarization of 114 μC/cm2 with an applied electric field of 606 kV/cm, which can be comparable to that of the typical Pb-based thin films. Moreover, we directly see the Mn occupation at the A-site of KNN perovskite structure using atomic-scale microstructure and composition analysis. The Mn-inlaid antiphase boundary can further enrich the understanding of perovskite crystal structure and give more possibilities for the design and optimization of perovskite materials.
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Affiliation(s)
- Chao Li
- Instrumental Analysis Center, Xi'an Jiaotong University, Xi'an, China
| | - Lingyan Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
| | - Liqiang Xu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, China.
| | - Xuerong Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Fangzhou Yao
- Research Center for Advanced Functional Ceramics, Wuzhen Laboratory, Jiaxing, China
| | - Jiangbo Lu
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, China
| | - Dong Wang
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, China
| | | | - Ping Huang
- Laboratory for Complex, Collective and Critical phenomena (L3C), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Hongmei Jing
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, China
| | - Yijun Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Haixia Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Chuansheng Ma
- Instrumental Analysis Center, Xi'an Jiaotong University, Xi'an, China
| | - Yinong Lyu
- The State Key Laboratory of Materials-Oriented Chemical Engineering, College of Materials Science and Engineering, Nanjing Tech University, Nanjing, China
| | - Xiaoyong Wei
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Ke Wang
- Research Center for Advanced Functional Ceramics, Wuzhen Laboratory, Jiaxing, China
| | - Zuo-Guang Ye
- Department of Chemistry & 4D LABS, Simon Fraser University, Burnaby, B.C., Canada
| | - Feng Chen
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, China.
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Li Q, Si W, Peng Y, Wang Y, Li J. Tuning Pd species via electronic metal-support interaction for methane combustion. J Colloid Interface Sci 2024; 667:12-21. [PMID: 38615619 DOI: 10.1016/j.jcis.2024.03.152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Revised: 03/19/2024] [Accepted: 03/22/2024] [Indexed: 04/16/2024]
Abstract
Utilizing catalytic combustion to convert methane (CH4) into CO2 and H2O stands as one of the most effective approaches for mitigating unburnt CH4 emissions from natural gas engines. Supported Pd catalysts have been extensively researched for their role in low-temperature CH4 combustion, with their catalytic activity greatly influenced by metal-support interactions. Surface interaction Pd phases, as a special type of Pd species originating from metal-support interactions on supported Pd catalysts, show controversial catalytic performance in CH4 combustion. Moreover, the impact of electronic metal-support interactions (EMSI, which refers to metal-support interactions associated with electron transfer) remains unclear. Hence, we opted for Ce-Zr solid solutions with different Ce:Zr molar ratios as supports and synthesized a range of supported Pd catalysts with varying EMSI intensities. Characterization revealed that as the oxygen vacancy concentration on the support increased, electron transfer weakened, leading to a higher Pd-O-Ce content, resulting in a lower CH4 activation barrier and better catalytic performance. This study offers a promising approach for regulating EMSI and active Pd species on supported catalysts in practical applications.
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Affiliation(s)
- Qi Li
- State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Tsinghua University, Beijing 100084, China
| | - Wenzhe Si
- State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Tsinghua University, Beijing 100084, China.
| | - Yue Peng
- State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Tsinghua University, Beijing 100084, China
| | - Yu Wang
- School of Environmental Science and Engineering, Yancheng Institute of Technology, Yancheng 224051, China
| | - Junhua Li
- State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Tsinghua University, Beijing 100084, China.
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Zhao J, Niu G, Ren W, Wang L, Dong G, Zhang N, Liu M, Ye ZG. Self-Polarization in Epitaxial Fully Matched Lead-Free Bismuth Sodium Titanate Based Ferroelectric Thin Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:23945-23951. [PMID: 29969004 DOI: 10.1021/acsami.8b02239] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The Bi0.5Na0.5TiO3-based ferroelectric is one of the most promising candidates for environment-friendly lead-free ferroelectric/piezoelectric materials for various applications such as actuators and micro-electromechanical systems. The understanding and tailoring of the ferro-(piezo-)electric properties of thin films, however, are strongly hindered by the formation of the defects such as dislocations, ion vacancies in the film, as well as by the complexity of the interface between the film and the substrate. An ideal system for the study of the polarization behavior in the ferro-(piezo-)electric film would be a fully matched system. In this work, monocrystalline 0.89Bi0.5Na0.5TiO3-0.11BaTiO3 thin films were epitaxially grown on (001)-oriented Nb-doped SrTiO3 substrates using a sol-gel technique. The films were almost fully lattice- and thermally matched with the substrate, thus avoiding the impact of dislocations and thermal stress. The films were self-poled by a built-in electric field, originating from the sedimentation of heavier atoms during the film preparation. As a consequence, an upward self-polarization was introduced into the films, giving rise to asymmetric phase hysteresis loops and domain switching current responses. These results highlight the importance of the interface complexity for the self-polarization of piezoelectric thin films, even for fully matched films, which will therefore facilitate the control of properties of piezoelectric films and their applications for various functional devices.
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Affiliation(s)
- Jinyan Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Gang Niu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Lingyan Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Nan Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Zuo-Guang Ye
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , China
- Department of Chemistry and 4D LABS , Simon Fraser University , Burnaby , British Columbia V5A 1S6 , Canada
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Structure and piezo-ferroelectricity relationship study of (K 0.5Na 0.5) 0.985La 0.005NbO 3 epitaxial films deposited on SrTiO 3 by sputtering. Sci Rep 2017; 7:17721. [PMID: 29255250 PMCID: PMC5735188 DOI: 10.1038/s41598-017-17767-3] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2017] [Accepted: 11/30/2017] [Indexed: 11/09/2022] Open
Abstract
This work demonstrates that the rf-sputtering technique, combined with appropriate heat treatments, is potentially effective to develop new materials and devices based on oxide-interface and strain engineering. We report a study of the structural-physical properties relationship of high crystalline quality, highly oriented and epitaxial thin films of the lead-free (K0.5Na0.5)0.985La0.005NbO3 (KNNLa) compound which were successfully deposited on Nb-doped SrTiO3 substrates, with orientations [100] (NSTO100) and [110] (NSTO110). The crystalline growth and the local ferroelectric and piezoelectric properties were evaluated by piezoresponse force microscopy combined with transmission electron microscopy and texture analysis by X-ray diffraction. Conditioned by the STO surface parameters, in the KNNLa films on NSTO100 coexist a commensurate [001]-tetragonal phase and two incommensurate [010]-monoclinic phases; while on NSTO110 the KNNLa films grew only in an incommensurate [101]-monoclinic phase. Both samples show excellent out-of-plane polarization switching patterns consistent with 180° domains walls; while for KNNLa/NSTO100 ferroelectric domains grow with the polarization pointing down, for KNNLa/NSTO110 they prefer to grow with the polarization pointing up. Comparing with previous reports on epitaxial KNN films, we find our samples to be of very high quality regarding their crystalline growth with highly ordered ferroelectric domains arrangements and, consequently, great potential for domain engineering.
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