Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene

Odd Integer Quantum Hall States with Interlayer Coherence in Twisted Bilayer Graphene

We report on the quantum Hall effect in two stacked graphene layers rotated by 2°. The tunneling strength among the layers can be varied from very weak to strong via the mechanism of magnetic breakdown when tuning the density. Odd-integer quantum Hall physics is not anticipated in the regime of suppressed tunneling for balanced layer densities, yet it is observed. We interpret this as a signature of Coulomb interaction induced interlayer coherence and Bose-Einstein condensation of excitons that form at half filling of each layer. A density imbalance gives rise to reentrant behavior due to a phase transition from the interlayer coherent state to incompressible behavior caused by simultaneous condensation of both layers in different quantum Hall states. With increasing overall density, magnetic breakdown gains the upper hand. As a consequence of the enhanced interlayer tunneling, the interlayer coherent state and the phase transition vanish.

Atomic Structure and Mechanical Properties of Twisted Bilayer Graphene

We studied the atomic structure and mechanical properties of twisted bilayer graphene with a different twist angle using molecular dynamic simulations. The two layers are corrugated after energy minimization. We found two different modes of corrugation. The mechanical properties are tested both in-plane and perpendicular to the plane. The in-plane properties are dominated by the orientation of graphene. The perpendicular properties depend on the twist angle, as the larger the twist angle, the higher the intrinsic strength.