1
|
Shi L, Wang H, Ma X, Wang Y, Wang F, Zhao D, Shen D. The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect. SENSORS (BASEL, SWITZERLAND) 2021; 21:5887. [PMID: 34502777 PMCID: PMC8434524 DOI: 10.3390/s21175887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 08/25/2021] [Accepted: 08/26/2021] [Indexed: 11/16/2022]
Abstract
The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.
Collapse
Affiliation(s)
- Linlin Shi
- State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, China; (H.W.); (X.M.)
| | - Hong Wang
- State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, China; (H.W.); (X.M.)
| | - Xiaohui Ma
- State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, No. 7186 Wei-Xing Road, Changchun 130022, China; (H.W.); (X.M.)
| | - Yunpeng Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China; (Y.W.); (F.W.); (D.Z.); (D.S.)
| | - Fei Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China; (Y.W.); (F.W.); (D.Z.); (D.S.)
| | - Dongxu Zhao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China; (Y.W.); (F.W.); (D.Z.); (D.S.)
| | - Dezhen Shen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China; (Y.W.); (F.W.); (D.Z.); (D.S.)
| |
Collapse
|
2
|
Liu Z, Fu X, Zhang DB. Strain gradient induced spatially indirect excitons in single crystalline ZnO nanowires. NANOSCALE 2020; 12:19083-19087. [PMID: 32945824 DOI: 10.1039/d0nr03563g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Spatially indirect excitons are important not only for the exploration of intriguing many-body effects but also for the development of applications such as solar cells with high efficiency. This type of exciton usually exists in heterostructures. Using the generalized Bloch theorem coupled with the density-functional tight-binding method, we reveal that spatially indirect excitons may emerge in single crystalline ZnO nanowires under bending. The underlying mechanism is attributed to the formation of an effective type-II band alignment due to the strain-gradient of the bent nanowires. Our finding paves a new route to realize spatially indirect excitons by strain engineering.
Collapse
Affiliation(s)
- Zhao Liu
- Beijing Computational Science Research Center, Beijing 100193, China.
| | - Xuewen Fu
- School of Physics, Nankai University, Tianjin 300071, China
| | - Dong-Bo Zhang
- College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China and Beijing Computational Science Research Center, Beijing 100193, China.
| |
Collapse
|
3
|
Vinai G, Ressel B, Torelli P, Loi F, Gobaut B, Ciancio R, Casarin B, Caretta A, Capasso L, Parmigiani F, Cugini F, Solzi M, Malvestuto M, Ciprian R. Giant magneto-electric coupling in 100 nm thick Co capped by ZnO nanorods. NANOSCALE 2018; 10:1326-1336. [PMID: 29296985 DOI: 10.1039/c7nr09233d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Here we report a giant, completely reversible magneto-electric coupling of 100 nm polycrystalline Co layer in contact with ZnO nanorods. When the sample is under an applied bias of ±2 V, the Co magnetic coercivity is reduced by a factor 5 from the un-poled case, with additionally a reduction of total magnetic moment in Co. Taking into account the chemical properties of ZnO nanorods measured by X-rays absorption near edge spectroscopy under bias, we conclude that these macroscopic effects on the magnetic response of the Co layer are due to the microstructure and the strong strain-driven magneto-electric coupling induced by the ZnO nanorods, whose nanostructuration maximizes the piezoelectric response under bias.
Collapse
Affiliation(s)
- Giovanni Vinai
- CNR-Istituto Officina dei Materiali IOM, s.s. 14 km 163.5, 34149, Trieste, Italy
| | | | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|