High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector

Ternary TiO2/MoS2/ZnO hetero-nanostructure based multifunctional sensing devices

Novel sensing applications benefit from multifunctional nanomaterials responsive to various external stimuli such as mechanics, electricity, light, humidity, or pollution. While few such materials occur naturally, the careful design of synergized nanomaterials unifies the cross-coupled properties which are weak or absent in single-phase materials. In this study, 2D MoS2 integrated with ultrathin dielectric oxide layers forms hetero-nanostructures with significant impacts on carrier transport. The ternary TiO2/MoS2/ZnO hetero-nanostructures, along with their individual properties, improve the performance of multifunctional sensing devices. The synthesized hetero-nanostructure exhibits a responsivity of up to 16 mA/W to 700 nm light and responds to 5 ppm ammonia gas at room temperature. These enhancements are attributed to interface charge transfer and photogating effects. The ternary TiO2/MoS2/ZnO hetero-nanostructure is compatible with existing semiconductor fabrication technologies, making it feasible to integrate into flexible, lightweight semiconductor devices and circuits. These results may inspire new photodetectors and sensing devices based on two-dimensional (2D) layered materials for IoT applications.

Recent Advances in Low-Dimensional Nanomaterials for Photodetectors

New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga2O3 Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal-Organic Chemical Vapor Deposition

We have achieved significantly improved device performance in solar-blind deep-ultraviolet photodetectors fabricated from β-Ga2O3 thin films grown via metal-organic chemical vapor deposition (MOCVD) on p-Si(111) substrates by improving material quality through the use of an AlN buffer layer. High-structural-quality β-Ga2O3 films with a (-201) preferred orientation are obtained after the introduction of the AlN buffer. Under 3 V bias, the dark current reaches a minimum of 45 fA, and the photo-to-dark current ratio (PDCR) reaches 8.5 × 105 in the photodetector with the metal-semiconductor-metal (MSM) structure. The peak responsivity and detectivity are 38.8 A/W and 2.27 × 1015 cm·Hz1/2/W, respectively, which are 16.5 and 230 times that without the buffer layer. Additionally, benefiting from the introduction of the AlN layer, the photodetection performance of the β-Ga2O3/AlN/Si heterojunction is significantly improved. The PDCR, peak responsivity, and detectivity for the β-Ga2O3/AlN/p-Si photodetector at 5 V bias are 2.7 × 103, 11.84 A/W, and 8.31 × 1013 cm·Hz1/2/W, respectively. The improved structural quality of β-Ga2O3 is mainly attributed to the decreased in-plane lattice mismatch of 2.3% for β-Ga2O3(-201)/AlN(002) compared to that of 20.83% for β-Ga2O3(-201)/Si(111), as well as the elimination of the native amorphous SiOx surface layer on the Si substrate during the initial growth of oxide thin films.

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

The direct growth of wafer-scale single crystal two-dimensional (2D) hexagonal boron nitride (h-BN) layer with a controllable thickness is highly desirable for 2D-material-based device applications. Here, for the first time, a facile submicron-spacing vapor deposition (SSVD) method is reported to achieve 2-inch single crystal h-BN layers with controllable thickness from monolayer to tens of nanometers on the dielectric sapphire substrates using a boron film as the solid source. In the SSVD growth, the boron film is fully covered by the same-sized sapphire substrate with a submicron spacing, leading to an efficient vapor diffusion transport. The epitaxial h-BN layer exhibits extremely high crystalline quality, as demonstrated by both a sharp Raman E_2g vibration mode (12 cm^-1 ) and a narrow X-ray rocking curve (0.10°). Furthermore, a deep ultraviolet photodetector and a ZrS₂ /h-BN heterostructure fabricated from the h-BN layer demonstrate its fascinating properties and potential applications. This facile method to synthesize wafer-scale single crystal h-BN layers with controllable thickness paves the way to future 2D semiconductor-based electronics and optoelectronics.

Advances in the Field of Two-Dimensional Crystal-Based Photodetectors

Two-dimensional (2D) materials have sparked intense interest among the scientific community owing to their extraordinary mechanical, optical, electronic, and thermal properties. In particular, the outstanding electronic and optical properties of 2D materials make them show great application potential in high-performance photodetectors (PDs), which can be applied in many fields such as high-frequency communication, novel biomedical imaging, national security, and so on. Here, the recent research progress of PDs based on 2D materials including graphene, transition metal carbides, transition-metal dichalcogenides, black phosphorus, and hexagonal boron nitride is comprehensively and systematically reviewed. First, the primary detection mechanism of 2D material-based PDs is introduced. Second, the structure and optical properties of 2D materials, as well as their applications in PDs, are heavily discussed. Finally, the opportunities and challenges of 2D material-based PDs are summarized and prospected. This review will provide a reference for the further application of 2D crystal-based PDs.

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p-β Ga2 O3 /n-GaN Heterojunction Fabricated by a Reversed Substitution Doping Method

An excellent broad-spectrum (220-380 nm) UV photodetector, covering the UVA-UVC wavelength range, with an ultrahigh detectivity of ≈10¹⁵  cm Hz^1/2 W^-1 , is reported. It is based on a p-β Ga₂ O₃ /n-GaN heterojunction, in which p-β Ga₂ O₃ is synthesized by thermal oxidation of GaN and a heterostructure is constructed with the bottom n-GaN. XRD shows the oxide layer is (-201) preferred oriented β-phase Ga₂ O₃ films. SIMS and XPS indicate that the residual N atoms as dopants remain in β Ga₂ O₃ . XPS also demonstrates that the Fermi level is 0.2 eV lower than the central level of the band gap, indicating that the dominant carriers are holes and the β Ga₂ O₃ is p-type conductive. Under a bias of -5 V, the photoresponsivity is 56 and 22 A W^-1 for 255 and 360 nm, respectively. Correspondingly, the detectivities reach an ultrahigh value of 2.7 × 10¹⁵  cm Hz^1/2 W^-1 (255 nm) and 1.1 × 10¹⁵  cm Hz^1/2 W^-1 (360 nm). The high performance of this UV photodetector is attributed mainly to the continuous conduction band of the p-β Ga₂ O₃ /n-GaN heterojunction without a potential energy barrier, which is more helpful for photogenerated electron transport from the space charge region to the n-type GaN layer.

Boron Nitride Nanoribbons Grown by Chemical Vapor Deposition for VUV Applications

The fabrication process of vacuum ultraviolet (VUV) detectors based on traditional semiconductor materials is complex and costly. The new generation of wide-bandgap semiconductor materials greatly reduce the fabrication cost of the entire VUV detector. We use the chemical vapor deposition (CVD) method to grow boron nitride nanoribbons (BNNRs) for VUV detectors. Morphological and compositional characterization of the BNNRs was tested. VUV detector based on BNNRs exhibits strong response to VUV light with wavelengths as short as 185 nm. The photo-dark current ratio (PDCR) of this detector is 272.43, the responsivity is 0.47 nA/W, and the rise time and fall time are 0.3 s and 0.6 s. The response speed is faster than the same type of BN-based VUV detectors. This paper offers more opportunities for high-performance and low-cost VUV detectors made of wide-bandgap semiconductor materials in the future.

Engineering Plasmonic Environments for 2D Materials and 2D-Based Photodetectors

Two-dimensional layered materials are considered ideal platforms to study novel small-scale optoelectronic devices due to their unique electronic structures and fantastic physical properties. However, it is urgent to further improve the light–matter interaction in these materials because their light absorption efficiency is limited by the atomically thin thickness. One of the promising approaches is to engineer the plasmonic environment around 2D materials for modulating light–matter interaction in 2D materials. This method greatly benefits from the advances in the development of nanofabrication and out-plane van der Waals interaction of 2D materials. In this paper, we review a series of recent works on 2D materials integrated with plasmonic environments, including the plasmonic-enhanced photoluminescence quantum yield, strong coupling between plasmons and excitons, nonlinear optics in plasmonic nanocavities, manipulation of chiral optical signals in hybrid nanostructures, and the improvement of the performance of optoelectronic devices based on composite systems.

Methods of hexagonal boron nitride exfoliation and its functionalization: covalent and non-covalent approaches

The exfoliation of two-dimensional (2D) hexagonal boron nitride nanosheets (h-BNNSs) from bulk hexagonal boron nitride (h-BN) materials has received intense interest owing to their fascinating physical, chemical, and biological properties. Numerous exfoliation techniques offer scalable approaches for harvesting single-layer or few-layer h-BNNSs. Their structure is very comparable to graphite, and they have numerous significant applications owing to their superb thermal, electrical, optical, and mechanical performance. Exfoliation from bulk stacked h-BN is the most cost-effective way to obtain large quantities of few layer h-BN. Herein, numerous methods have been discussed to achieve the exfoliation of h-BN, each with advantages and disadvantages. Herein, we describe the existing exfoliation methods used to fabricate single-layer materials. Besides exfoliation methods, various functionalization methods, such as covalent, non-covalent, and Lewis acid-base approaches, including physical and chemical methods, are extensively described for the preparation of several h-BNNS derivatives. Moreover, the unique and potent characteristics of functionalized h-BNNSs, like enhanced solubility in water, improved thermal conductivity, stability, and excellent biocompatibility, lead to certain extensive applications in the areas of biomedical science, electronics, novel polymeric composites, and UV photodetectors, and these are also highlighted.

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Atomically thin hexagonal boron nitride (h-BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D-material-based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h-BN is found to be a natural hyperbolic material in the mid-infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h-BN flakes at their proof-of-concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large-scale, high-quality, atomically thin h-BN films and heterostructures. Herein, CVD synthesis of atomically thin h-BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single-crystal h-BN film. Meanwhile, epitaxial growth of 2D materials onto h-BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h-BN and its heterostructures in optoelectronics and electronics are summarized.

The recent advancement of low-dimensional nanostructured materials for drug delivery and drug sensing application: A brief review

In this review article, we have presented a detailed analysis of the recent advancement of quantum mechanical calculations in the applications of the low-dimensional nanomaterials (LDNs) into biomedical fields like biosensors and drug delivery systems development. Biosensors play an essential role for many communities, e.g. law enforcing agencies to sense illicit drugs, medical communities to remove overdosed medications from the human and animal body etc. Besides, drug delivery systems are theoretically being proposed for many years and experimentally found to deliver the drug to the targeted sites by reducing the harmful side effects significantly. In current COVID-19 pandemic, biosensors can play significant roles, e.g. to remove experimental drugs during the human trials if they show any unwanted adverse effect etc. where the drug delivery systems can be potentially applied to reduce the side effects. But before proceeding to these noble and expensive translational research works, advanced theoretical calculations can provide the possible outcomes with considerable accuracy. Hence in this review article, we have analyzed how theoretical calculations can be used to investigate LDNs as potential biosensor devices or drug delivery systems. We have also made a very brief discussion on the properties of biosensors or drug delivery systems which should be investigated for the biomedical applications and how to calculate them theoretically. Finally, we have made a detailed analysis of a large number of recently published research works where theoretical calculations were used to propose different LDNs for bio-sensing and drug delivery applications.

High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance

Among the layered two dimensional semiconductors, molybdenum disulfide (MoS2) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light-matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response (R) and external quantum efficiency (EQE) of few-atomic layered MoS2 phototransistors fabricated on a SiO2 dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm-900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 103 A W-1 under white light illumination with an optical power Popt = 0.02 nW. The R value increased to 3.5 × 103 A W-1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 103 and 6 × 103 A W-1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 105% and 106% measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent-dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.

Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors

This study presents a fast and effective method to synthesize 2D boron nitride/tungsten nitride (BN–WN) nanocomposites for tunable bandgap structures and devices. A few minutes of synthesis yielded a large quantity of high-quality 2D nanocomposites, with which a simple, low-cost deep UV photo-detector (DUV-PD) was fabricated and tested. The new device was demonstrated to have very good performance. High responsivity up to 1.17 A/W, fast response-time of lower than two milliseconds and highly stable repeatability were obtained. Furthermore, the influences of operating temperature and applied bias voltage on the properties of DUV-PD as well as its band structure shift were investigated.

Vacuum-Ultraviolet Photon Detections

Vacuum-ultraviolet (VUV) photon detection technology is an effective means for the exploration in the field of space science (monitoring the formation and evolution of solar storms), high-energy physics (dark matter detection), large-scale scientific facility (VUV free electron lasers) and electronic industry (high-resolution lithography). The advancement of this technology mainly depends on the performance optimization of VUV photodetectors. In this review, we introduced the research progress on the typical VUV photodetectors based on scintillator, photomultiplier tube, semiconductor, and gas, with their unique advantages and optimal performance indicators in different applications summarized. In particular, during recent years, thanks to the advances in ultra-wide bandgap semiconductors, economical VUV photodetectors with low power consumption and small size have been encouragingly developed. Finally, we pointed out the remaining challenges for each type of VUV detector, with the aim of maximizing the performance in a variety of applications in the future.

Synthesis of High-Quality Multilayer Hexagonal Boron Nitride Films on Au Foils for Ultrahigh Rejection Ratio Solar-Blind Photodetection

Solar-blind photodetectors have widespread applications due to the unique merit of a "black background" on the earth. However, most solar-blind photodetectors reported previously exhibited quite low rejection ratios (R_200nm/R_280nm < 10³) and were interfered with by light longer than 280 nm. Herein, by an ambient pressure chemical vapor deposition (CVD) method, large-area, clean, and uniform two-dimensional (2D) multilayer h-BN films with different thicknesses have been successfully synthesized on Au foils. The synthesized multilayer h-BN film is transparent to light longer than 280 nm, showing excellent optical and optoelectronic properties to weak solar-blind light (μW/cm²). This sensitive solar-blind h-BN photodetector exhibits ultrahigh rejection ratios (R_220nm/R_280nm > 10³ and R_220nm/R_290nm > 10⁴), a low dark current (10² fA), and a large detectivity (3.9 × 10¹⁰ Jones). It is noteworthy that the rejection ratio (R_220nm/R_290nm) here is superior to most of those previously reported based on traditional semiconductors. This large-scale, clean, and uniform multilayer h-BN film will contribute to the progress of next-generation optoelectronic devices.

Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride

Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA·W^-1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.

Nanoplasmonic 1D Diamond UV Photodetectors with High Performance

Diamond nanowires have recently drawn substantial attention because of their unique physical and chemical properties for electrochemical sensors, optoelectronics, and nanophotonics applications. However, diamond nanowire-based ultraviolet photodetectors have not been reported because of the challenges involved in synthesizing crystalline diamond nanowires with controllable morphologies and, more fundamentally, the material's high carrier concentration with low mobilities that limits the obtainable photoresponsivity. The synergetic integration of ultrananocrystalline diamond (UNCD) nanowires with nanoplasmonic enhancement by noble metal nanoparticles is a very promising approach to overcome these shortcomings. Here we report the fabrication of boron-doped ultrananocrystalline diamond nanowires functionalized with the platinum nanoparticles to form self-powered ultraviolet photodetectors that exhibit an ultrahigh photoresponsivity of 388 Amp/Watt at 300 nm wavelength, a fast response time around 20 ms, and a good UV/visible rejection ratio of about 5 orders of magnitude under zero-bias condition.

Shape evolution of two dimensional hexagonal boron nitride single domains on Cu/Ni alloy and its applications in ultraviolet detection

Two dimensional (2D) hexagonal boron nitride (h-BN) has attracted extensive attention due to its high thermal and chemical stability, excellent dielectric characteristic, and unique optical properties. However, the chemical vapor deposition synthesis of 2D h-BN is not fully explored, such as morphology regulation and size control. Here we demonstrate the growth of 2D h-BN single domains on Cu/Ni alloy via atmospheric chemical vapor deposition (APCVD). We discover that the shape of the as-grown h-BN single domains can be controlled from triangles, hexagons, to circles by adjusting the Ni content of the Cu/Ni substrates. Moreover, we find out that increasing the nickel content can suppress the nucleation density while the average domain size is accordingly improved. The grown single-crystalline h-BN demonstrates ultralow dark current about 0.9 pA and outstanding ultraviolet response with the responsivity up to 5.45 mAW^-1. The response time are 376 and 198 ms. Our work sheds light on the controllable synthesis of 2D h-BN and promotes its applications in high ultraviolet detection.

2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection

Two-dimensional materials beyond graphene and TMDs can be promising candidates for wide-spectra photodetection.

A compact design of a characterization station for far UV photodetectors

A newly fabricated characterization station is presented. It is a compact, cost-effective, and easily adjustable apparatus. Each part including 4-pin probe, manipulators, operating temperature, and applied bias can be independently controlled. The station can provide highly reliable, reproducible, and economical methods to quickly conduct and complete the characterizations of a large amount of sensing materials within a short period of time. It is particularly suitable for studies of various nanostructured materials and their related thermal effect, polarization effect, sensitivity, and electrical and electronic properties.

High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques. Self-powered deep ultraviolet (DUV) photodetectors (PDs) based on BNNSs with Schottky contact structures are designed and fabricated. By connecting the fabricated DUV photodetector to an ammeter, the response strength, response time and recovery time to different DUV wavelengths at different intensities have been characterized using the output short circuit photocurrent without a power supply. Furthermore, effects of temperature and plasma treatment on the induced photocurrent response of detectors have also been investigated. The experimental data clearly indicate that plasma treatment would significantly improve both induced photocurrent and response time. The BNNS-based DUV photodetector is demonstrated to possess excellent performance at a temperature up to 400 °C, including high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, which is better than almost all reported semiconducting nanomaterial-based self-powered photodetectors.