Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n-p Junctions by Applied Stress

Giant Room-Temperature Power Factor in p-Type Thermoelectric SnSe under High Pressure

Materials that can efficiently convert heat into electricity are widely utilized in energy conversion technologies. The existing thermoelectrics demonstrate rather limited performance characteristics at room temperature, and hence, alternative materials and approaches are very much in demand. Here, it is experimentally shown that manipulating an applied stress can greatly improve a thermoelectric power factor of layered p-type SnSe single crystals up to ≈180 µW K^-2 cm^-1 at room temperature. This giant enhancement is explained by a synergetic effect of three factors, such as: band-gap narrowing, Lifshitz transition, and strong sample deformation. Under applied pressure above 1 GPa, the SnSe crystals become more ductile, which can be related to changes in the prevailing chemical bonding type inside the layers, from covalent toward metavalent. Thus, the SnSe single crystals transform into a highly unconventional crystalline state in which their layered crystal stacking is largely preserved, while the layers themselves are strongly deformed. This results in a dramatic narrowing in a band gap, from E_g = 0.83 to 0.50 eV (at ambient conditions). Thus, the work demonstrates a novel strategy of improving the performance parameters of chalcogenide thermoelectrics via tuning their chemical bonding type, stimulating a sample deformation and a band-structure reconstruction.

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure

Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.

Pressure-Driven Reversible Switching between n- and p-Type Conduction in Chalcopyrite CuFeS2

Temperature-dependent switching between p- and n-type conduction is a newly observed phenomenon in very few Ag-based semiconductors, which may promote fascinating applications in modern electronics. Pressure, as an efficient external stimulus that has driven collective phenomena such as spin-crossover and Mott transition, is also expected to initialize a conduction-type switching in transition metal-based semiconductors. Herein, we report the observation of a pressure-driven dramatic switching between p- and n-type conduction in chalcopyrite CuFeS₂ associated with a structural phase transition. Under compression around 8 GPa, CuFeS₂ undergoes a phase transition with symmetry breakdown from space group I-42 d to space group I-4 accompanying with a remarkable volume shrinkage of the FeS₄ tetrahedra. A high-to-low spin-crossover of Fe²⁺ ( S = 2 to S = 0) is manifested along with this phase transition. Instead of pressure-driven metallization, a surprising semiconductor-to-semiconductor transition is observed associated with the structural and electronic transformations. Significantly, both photocurrent and Hall coefficient measurements confirm that CuFeS₂ undergoes a reversible pressure-driven p- n conduction type switching accompanying with the structural phase transition. The absence of cationic charge transfer between copper and iron during the phase transition is confirmed by both X-ray absorption near-edge spectra (Cu/Fe, K-edge) and total-fluorescence-yield X-ray absorption spectra (Fe, K-edge) results, and the valence distribution maintains Cu²⁺Fe²⁺S₂ in the high-pressure phase. The observation of an abrupt pressure-driven p- n conduction type switching in a transition metal-based semiconductor paves the way to novel pressure-responsive switching devices.