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Bian H, Goh YY, Liu Y, Ling H, Xie L, Liu X. Stimuli-Responsive Memristive Materials for Artificial Synapses and Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006469. [PMID: 33837601 DOI: 10.1002/adma.202006469] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2020] [Revised: 12/03/2020] [Indexed: 06/12/2023]
Abstract
Neuromorphic computing holds promise for building next-generation intelligent systems in a more energy-efficient way than the conventional von Neumann computing architecture. Memristive hardware, which mimics biological neurons and synapses, offers high-speed operation and low power consumption, enabling energy- and area-efficient, brain-inspired computing. Here, recent advances in memristive materials and strategies that emulate synaptic functions for neuromorphic computing are highlighted. The working principles and characteristics of biological neurons and synapses, which can be mimicked by memristive devices, are presented. Besides device structures and operation with different external stimuli such as electric, magnetic, and optical fields, how memristive materials with a rich variety of underlying physical mechanisms can allow fast, reliable, and low-power neuromorphic applications is also discussed. Finally, device requirements are examined and a perspective on challenges in developing memristive materials for device engineering and computing science is given.
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Affiliation(s)
- Hongyu Bian
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Yi Yiing Goh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Yuxia Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, 215123, China
| | - Haifeng Ling
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Linghai Xie
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, 215123, China
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2
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Wu Z, Liu Y, Guo E, Darbandy G, Wang SJ, Hübner R, Kloes A, Kleemann H, Leo K. Efficient and low-voltage vertical organic permeable base light-emitting transistors. NATURE MATERIALS 2021; 20:1007-1014. [PMID: 33649562 DOI: 10.1038/s41563-021-00937-0] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2020] [Accepted: 01/18/2021] [Indexed: 06/12/2023]
Abstract
Organic light-emitting transistors, three-terminal devices combining a thin-film transistor with a light-emitting diode, have generated increasing interest in organic electronics. However, increasing their efficiency while keeping the operating voltage low still remains a key challenge. Here, we demonstrate organic permeable base light-emitting transistors; these three-terminal vertical optoelectronic devices operate at driving voltages below 5.0 V; emit in the red, green and blue ranges; and reach, respectively, peak external quantum efficiencies of 19.6%, 24.6% and 11.8%, current efficiencies of 20.6 cd A-1, 90.1 cd A-1 and 27.1 cd A-1 and maximum luminance values of 9,833 cd m-2, 12,513 cd m-2 and 4,753 cd m-2. Our simulations demonstrate that the nano-pore permeable base electrode located at the centre of the device, which forms a distinctive optical microcavity and regulates charge carrier injection and transport, is the key to the good performance obtained. Our work paves the way towards efficient and low-voltage organic light-emitting transistors, useful for power-efficient active matrix displays and solid-state lighting.
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Affiliation(s)
- Zhongbin Wu
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, China.
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany.
| | - Yuan Liu
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
- Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science and Technology University, Beijing, China
| | - Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Ghader Darbandy
- NanoP, TH Mittelhessen, University of Applied Sciences, Giessen, Germany
| | - Shu-Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - Alexander Kloes
- NanoP, TH Mittelhessen, University of Applied Sciences, Giessen, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
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3
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Sawatzki MF, Kleemann H, Boroujeni BK, Wang S, Vahland J, Ellinger F, Leo K. Doped Highly Crystalline Organic Films: Toward High-Performance Organic Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003519. [PMID: 33747740 PMCID: PMC7967074 DOI: 10.1002/advs.202003519] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Revised: 10/27/2020] [Indexed: 06/12/2023]
Abstract
Today's organic electronic devices, such as the highly successful OLED displays, are based on disordered films, with carrier mobilities orders of magnitude below those of inorganic semiconductors like silicon or GaAs. For organic devices such as diodes and transistors, higher charge carrier mobilities are paramount to achieve high performance. Organic single crystals have been shown to offer these required high mobilities. However, manufacturing and processing of these crystals are complex, rendering their use outside of laboratory-scale applications negligible. Furthermore, doping cannot be easily integrated into these systems, which is particularly problematic for devices mandating high mobility materials. Here, it is demonstrated for the model system rubrene that highly ordered, doped thin films can be prepared, allowing high-performance organic devices on almost any substrate. Specifically, triclinic rubrene crystals are created by abrupt heating of amorphous layers and can be electrically doped during the epitaxial growth process to achieve hole or electron conduction. Analysis of the space charge limited current in these films reveals record vertical mobilities of 10.3(49) cm2 V-1 s-1. To demonstrate the performance of this materials system, monolithic pin-diodes aimed for rectification are built. The f 3 d b of these diodes is over 1 GHz and thus higher than any other organic semiconductor-based device shown so far. It is believed that this work will pave the way for future high-performance organic devices based on highly crystalline thin films.
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Affiliation(s)
- Michael F. Sawatzki
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
| | - Bahman K. Boroujeni
- Chair of Circuit Design and Network Theory (CCN)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
- Center for Advancing Electronics Dresden (cfaed)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
| | - Shu‐Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
| | - Joern Vahland
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
| | - Frank Ellinger
- Chair of Circuit Design and Network Theory (CCN)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
- Center for Advancing Electronics Dresden (cfaed)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNoethnitzer Str. 61Dresden01187Germany
- Center for Advancing Electronics Dresden (cfaed)Technische Universität DresdenHelmholtz Str. 18Dresden01069Germany
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Guo E, Wu Z, Darbandy G, Xing S, Wang SJ, Tahn A, Göbel M, Kloes A, Leo K, Kleemann H. Vertical organic permeable dual-base transistors for logic circuits. Nat Commun 2020; 11:4725. [PMID: 32948770 PMCID: PMC7501854 DOI: 10.1038/s41467-020-18576-5] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2020] [Accepted: 08/21/2020] [Indexed: 11/30/2022] Open
Abstract
The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits. The development of vertical organic transistors with controllable threshold voltage is highly desirable for integrated circuit-based displays and sensors. Here, the authors report vertical organic permeable dual-based transistors with independently tunable on-currents and threshold voltages.
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Affiliation(s)
- Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Zhongbin Wu
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany. .,Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 710072, Xi'an, China.
| | - Ghader Darbandy
- NanoP, TH Mittelhessen, University of Applied Sciences, 35390, Giessen, Germany
| | - Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Shu-Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Alexander Tahn
- Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Michael Göbel
- Leibniz-Institut für Polymerforschung Dresden e.V. (IPF), 01069, Dresden, Germany
| | - Alexander Kloes
- NanoP, TH Mittelhessen, University of Applied Sciences, 35390, Giessen, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany.
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
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5
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Sporea RA, Niang KM, Flewitt AJ, Silva SRP. Novel Tunnel-Contact-Controlled IGZO Thin-Film Transistors with High Tolerance to Geometrical Variability. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902551. [PMID: 31309623 DOI: 10.1002/adma.201902551] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2019] [Revised: 06/21/2019] [Indexed: 06/10/2023]
Abstract
Thin insulating layers are used to modulate a depletion region at the source of a thin-film transistor. Bottom contact, staggered-electrode indium gallium zinc oxide transistors with a 3 nm Al2 O3 layer between the semiconductor and Ni source/drain contacts, show behaviors typical of source-gated transistors (SGTs): low saturation voltage (VD_SAT ≈ 3 V), change in VD_SAT with a gate voltage of only 0.12 V V-1 , and flat saturated output characteristics (small dependence of drain current on drain voltage). The transistors show high tolerance to geometry: the saturated current changes only 0.15× for 2-50 µm channels and 2× for 9-45 µm source-gate overlaps. A higher than expected (5×) increase in drain current for a 30 K change in temperature, similar to Schottky-contact SGTs, underlines a more complex device operation than previously theorized. Optimization for increasing intrinsic gain and reducing temperature effects is discussed. These devices complete the portfolio of contact-controlled transistors, comprising devices with Schottky contacts, bulk barrier, or heterojunctions, and now, tunneling insulating layers. The findings should also apply to nanowire transistors, leading to new low-power, robust design approaches as large-scale fabrication techniques with sub-nanometer control mature.
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Affiliation(s)
- Radu A Sporea
- Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey, Guildford, GU2 7XH, UK
| | - Kham M Niang
- Electrical Engineering Division, Department of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
| | - Andrew J Flewitt
- Electrical Engineering Division, Department of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
| | - S Ravi P Silva
- Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey, Guildford, GU2 7XH, UK
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6
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Fan X, Kneppe D, Sayevich V, Kleemann H, Tahn A, Leo K, Lesnyak V, Eychmüller A. High-Performance Ultra-Short Channel Field-Effect Transistor Using Solution-Processable Colloidal Nanocrystals. J Phys Chem Lett 2019; 10:4025-4031. [PMID: 31259561 DOI: 10.1021/acs.jpclett.9b01649] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We demonstrate high-mobility solution-processed inorganic field-effect transistors (FETs) with ultra-short channel (USC) length using semiconductor CdSe nanocrystals (NCs). Capping of the NCs with hybrid inorganic-organic CdCl3--butylamine ligands enables coarsening of the NCs during annealing at a moderate temperature, resulting in the devices having good transport characteristics with electron mobilities in the saturation regime reaching 8 cm2 V-1 s-1. Solution-based processing of the NCs and fabrication of thin films involve neither harsh conditions nor the use of hydrazine. Employing photolithographic methods, we fabricated FETs with a vertical overlap of source and drain electrodes to achieve a submicrometer channel length. To the best of our knowledge, this is the first report on an USC FET based on colloidal semiconductor NCs. Because of a short channel length, the FETs show a normalized transconductance of 4.2 m V-1 s-1 with a high on/off ratio of 105.
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Affiliation(s)
- Xuelin Fan
- Physical Chemistry , TU Dresden , Bergstrasse 66b , 01062 Dresden , Germany
| | - David Kneppe
- Dresden Integrated Center for Applied Photophysics and Photonic Materials , TU Dresden , Nöthnitzer Strasse 61 , 01187 Dresden , Germany
| | - Vladimir Sayevich
- Physical Chemistry , TU Dresden , Bergstrasse 66b , 01062 Dresden , Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Photophysics and Photonic Materials , TU Dresden , Nöthnitzer Strasse 61 , 01187 Dresden , Germany
| | - Alexander Tahn
- Dresden Center for Nanoanalysis , TU Dresden , Helmholtzstrasse 18 , 01069 Dresden , Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Photophysics and Photonic Materials , TU Dresden , Nöthnitzer Strasse 61 , 01187 Dresden , Germany
| | - Vladimir Lesnyak
- Physical Chemistry , TU Dresden , Bergstrasse 66b , 01062 Dresden , Germany
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7
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Lenz J, Del Giudice F, Geisenhof FR, Winterer F, Weitz RT. Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm -2 regime and artificial synaptic behaviour. NATURE NANOTECHNOLOGY 2019; 14:579-585. [PMID: 30886379 DOI: 10.1038/s41565-019-0407-0] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2018] [Accepted: 02/15/2019] [Indexed: 06/09/2023]
Abstract
Until now, organic semiconductors have failed to achieve high performance in highly integrated, sub-100 nm transistors. Consequently, single-crystalline materials such as single-walled carbon nanotubes, MoS2 or inorganic semiconductors are the materials of choice at the nanoscale. Here we show, using a vertical field-effect transistor design with a channel length of only 40 nm and a footprint of 2 × 80 × 80 nm2, that high electrical performance with organic polymers can be realized when using electrolyte gating. Our organic transistors combine high on-state current densities of above 3 MA cm-2, on/off current modulation ratios of up to 108 and large transconductances of up to 5,000 S m-1. Given the high on-state currents at such large on/off ratios, our novel structures also show promise for use in artificial neural networks, where they could operate as memristive devices with sub-100 fJ energy usage.
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Affiliation(s)
- Jakob Lenz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Fabio Del Giudice
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
- Walter-Schottky Institute, Technical University Munich, Garching, Germany
| | - Fabian R Geisenhof
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Felix Winterer
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - R Thomas Weitz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany.
- Nanosystems Initiative Munich (NIM), Munich, Germany.
- Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Munich, Germany.
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8
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Dollinger F, Lim KG, Li Y, Guo E, Formánek P, Hübner R, Fischer A, Kleemann H, Leo K. Vertical Organic Thin-Film Transistors with an Anodized Permeable Base for Very Low Leakage Current. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900917. [PMID: 30920705 DOI: 10.1002/adma.201900917] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2019] [Revised: 03/09/2019] [Indexed: 06/09/2023]
Abstract
The organic permeable base transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is surrounded by a native oxide layer for passivation, currently created by oxidation in air. However, this process is not reliable and leads to large performance variations between samples, slow production, and relatively high leakage currents. Here, for the first time it is demonstrated that electrochemical anodization can be conveniently employed for the fabrication of high-performance OPBTs with vastly reduced leakage currents and more controlled process parameters. Very large transmission factors of 99.9996% are achieved, while excellent on/off ratios of 5 × 105 and high on-currents greater than 300 mA cm-2 show that the C60 semiconductor layer can withstand the electrochemical anodization. These results make anodization an intriguing option for innovative organic transistor design.
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Affiliation(s)
- Felix Dollinger
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Kyung-Geun Lim
- Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
| | - Yang Li
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Peter Formánek
- Leibniz-Institut für Polymerforschung Dresden e. V. (IPF), 01069, Dresden, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Axel Fischer
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
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9
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Klinger MP, Fischer A, Kleemann H, Leo K. Non-Linear Self-Heating in Organic Transistors Reaching High Power Densities. Sci Rep 2018; 8:9806. [PMID: 29955076 PMCID: PMC6023904 DOI: 10.1038/s41598-018-27689-3] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2018] [Accepted: 06/06/2018] [Indexed: 11/23/2022] Open
Abstract
The improvement of the performance of organic thin-film transistors is driven by novel materials and improved device engineering. Key developments are a continuous increase of the charge carrier mobility, a scale-down of transistor dimensions, and the reduction of contact resistance. Furthermore, new transistor designs such as vertical devices are introduced to benefit from drastically reduced channel length while keeping the effort for structuring moderate. Here, we show that a strong electrothermal feedback occurs in organic transistors, ultimately leading to output characteristics with regions of S-shaped negative differential resistance. For that purpose, we use an organic permeable-base transistor (OPBT) with outstanding current densities, where a strong and reproducible, non-linear electrothermal feedback is revealed. We derive an analytical description of the temperature dependent current-voltage behavior and offer a rapid investigation method for material systems, where a temperature-activated conductivity can be observed.
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Affiliation(s)
- Markus P Klinger
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.
| | - Axel Fischer
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
- Center for Advancing Electronics Dresden (cfead), Technische Universität Dresden, Würzburger Str. 43, 01187, Dresden, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
- Center for Advancing Electronics Dresden (cfead), Technische Universität Dresden, Würzburger Str. 43, 01187, Dresden, Germany
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10
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Kheradmand-Boroujeni B, Klinger MP, Fischer A, Kleemann H, Leo K, Ellinger F. A Pulse-Biasing Small-Signal Measurement Technique Enabling 40 MHz Operation of Vertical Organic Transistors. Sci Rep 2018; 8:7643. [PMID: 29769651 PMCID: PMC5955934 DOI: 10.1038/s41598-018-26008-0] [Citation(s) in RCA: 37] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2018] [Accepted: 04/27/2018] [Indexed: 11/19/2022] Open
Abstract
Organic/polymer transistors can enable the fabrication of large-area flexible circuits. However, these devices are inherently temperature sensitive due to the strong temperature dependence of charge carrier mobility, suffer from low thermal conductivity of plastic substrates, and are slow due to the low mobility and long channel length (L). Here we report a new, advanced characterization circuit that within around ten microseconds simultaneously applies an accurate large-signal pulse bias and a small-signal sinusoidal excitation to the transistor and measures many high-frequency parameters. This significantly reduces the self-heating and therefore provides data at a known junction temperature more accurate for fitting model parameters to the results, enables small-signal characterization over >10 times wider bias I–V range, with ~105 times less bias-stress effects. Fully thermally-evaporated vertical permeable-base transistors with physical L = 200 nm fabricated using C60 fullerene semiconductor are characterized. Intrinsic gain up to 35 dB, and record transit frequency (unity current-gain cutoff frequency, fT) of 40 MHz at 8.6 V are achieved. Interestingly, no saturation in fT − I and transconductance (gm − I) is observed at high currents. This paves the way for the integration of high-frequency functionalities into organic circuits, such as long-distance wireless communication and switching power converters.
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Affiliation(s)
- Bahman Kheradmand-Boroujeni
- Chair for Circuit Design and Network Theory (CCN), Technische Universität Dresden, Helmholtzstr. 18, 01069, Dresden, Germany. .,Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Würzburgerstr. 46, 01187, Dresden, Germany.
| | - Markus P Klinger
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzerstr. 61, 01187, Dresden, Germany
| | - Axel Fischer
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzerstr. 61, 01187, Dresden, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzerstr. 61, 01187, Dresden, Germany
| | - Karl Leo
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Würzburgerstr. 46, 01187, Dresden, Germany.,Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzerstr. 61, 01187, Dresden, Germany
| | - Frank Ellinger
- Chair for Circuit Design and Network Theory (CCN), Technische Universität Dresden, Helmholtzstr. 18, 01069, Dresden, Germany.,Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Würzburgerstr. 46, 01187, Dresden, Germany
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