The creation of sub-10 nm In(PO3)3 nanocrystals in an insulating matrix, and underlying formation mechanisms

Sub-10 nm In(PO(3))(3) nanocrystals (NCs) were created in an insulating matrix by rapid thermal annealing to form nanocomposite structures. On annealing at a temperature of 400 degrees C, P(2)O(5) NCs were formed by substituting P for Zn atoms in ZnO films via the kickout diffusion mechanism based on the fixed oxygen sublattice. On annealing at a higher temperature of 600 degrees C, however, In(PO(3))(3) NCs were nucleated by diffusion of In atoms from the substrate into the sites of P(2)O(5) NCs that coalesced by moving atoms to neighboring grains in the strain relaxed region. The formation mechanisms of sub-10 nm In(PO(3))(3) NCs in an insulating matrix due to rapid thermal annealing are described on the basis of the experimental results.