Heat Capacity of Indium or Gallium Sesqui-Chalcogenides

The chalcogenides of p-block elements constitute a significant category of materials with substantial potential for advancing the field of electronic and optoelectronic devices. This is attributed to their exceptional characteristics, including elevated carrier mobility and the ability to fine-tune band gaps through solid solution formation. These compounds exhibit diverse structures, encompassing both three-dimensional and two-dimensional configurations, the latter exemplified by the compound In2Se3. Sesqui-chalcogenides were synthesized through the direct reaction of highly pure elements within a quartz ampoule. Their single-phase composition was confirmed using X-ray diffraction, and the morphology and chemical composition were characterized using scanning electron microscopy. The compositions of all six materials were also confirmed using X-ray photoelectron spectroscopy and Raman spectroscopy. This investigation delves into the thermodynamic properties of indium and gallium sesqui-chalcogenides. It involves low-temperature heat capacity measurements to evaluate standard entropies and Tian-Calvet calorimetry to elucidate the temperature dependence of heat capacity beyond the reference temperature of 298.15 K, as well as the enthalpy of formation assessed from DFT calculations.

Synthesis of self-assembled mesoporous 3D In2O3 hierarchical micro flowers composed of nanosheets and their electrochemical properties

This report describes the methodology for the fabrication of mesoporous In₂O₃ microflowers by hydrothermal and calcination procedures in which In(OH)₃/In₂S₃ acts as an intermediate. Both In₂O₃ and its precursor were analyzed with scanning electron microscopy, energy dispersive X-ray spectrophotometry, transmission electron microscopy and powder X-ray diffraction. BET surface area, pore size and pore volume analyses were also carried out. Electron microscopy images clearly evidence the self-assembly of 2D nanosheets into the micro flower structure. The mechanism of self-assembly and calcination is reported. Electrochemical properties of the synthesized In₂O₃ micro flowers were studied.

This report describes the methodology for the fabrication of mesoporous In₂O₃ microflowers by hydrothermal and calcination procedures in which In(OH)₃/In₂S₃ acts as an intermediate.

Stable, Fast UV-Vis-NIR Photodetector with Excellent Responsivity, Detectivity, and Sensitivity Based on α-In2Te3 Films with a Direct Bandgap

Photoelectric conversion is of great importance to extensive applications. However, thus far, photodetectors integrated with high responsivity, excellent detectivity, large phototo-dark current ratio, fast response speed, broad spectral range, and good stability are rarely achieved. Herein, we deposited large-scale and high-quality polycrystalline indium sesquitelluride (α-In2Te3) films via pulsed-laser deposition. Then, we demonstrated that the photodetectors made of the prepared α-In2Te3 films possess stable photoswitching behavior from 370 to 1064 nm and short response time better than ca. 15 ms. At a source-drain voltage of 5 V, the device achieves a high responsivity of 44 A/W, along with an outstanding detectivity of 6 × 10(12) cm H(1/2) W(-1) and an excellent sensitivity of 2.5 × 10(5) cm(2)/W. All of these figures-of-merit are the best among those of the reported α-In2Te3 photodetectors. In fact, they are comparable to the state-of-the-art commercial Si and Ge photodetectors. For the first time, we established the theoretical evidence that α-In2Te3 possesses a direct bandgap structure, which reasonably accounts for the superior photodetection performances above. Importantly, the device exhibits a good stability against the multiple photoswitching operation and ambient environment, along with no obvious voltage-scan hysteresis. These excellent figures-of-merit, together with the broad spectral range and good stability, underscore α-In2Te3 as a promising candidate material for next-generation photodetection.