Relaxation of Photoexcited Electron-Hole Pairs at Si(111) Surfaces with Adsorbed Ag Monolayered Clusters of Increasing Size

The efficiency of silicon solar cells is affected by the light absorption and recombination losses of photoexcited charge carries. One possible way to improve the efficiency is through the deposition of transition metal nanoparticles on Si surfaces. Here, we first carry out density functional theory (DFT) calculations to obtain electronic structures for Agn (n = 1-7) monolayered clusters adsorbed on Si(111)/H surfaces. Results are presented in the form of the density of states, band gaps, and light absorption, which allow for the investigation of the interaction of Ag clusters with Si. Different behaviors can be expected depending on the size of the deposited Ag clusters. Overall, the deposition of Ag clusters leads to smaller band gaps, red-shifts, and large increases in light absorption compared to the pristine Si slab. We then study the relaxation dynamics of electron-hole pairs for slabs based on nonadiabatic couplings using the reduced density matrix approach within the Redfield formalism. Nonradiative relaxation rates are noticeably different for various structures and transitions. One observes higher relaxation rates for surfaces with adsorbates than for the pristine Si surface due to charge transfer events involving Ag orbitals. We also compute emission spectra from excited-state relaxation dynamics. The band gap emission is dark for the pristine Si due to the indirect nature of its band gap. The addition of larger Ag clusters breaks the symmetry of Si slabs, enabling indirect gap transitions. These slabs thus exhibit bright band gap emission. The introduction of adsorbates is advantageous for applications in photovoltaics and photocatalysis.

Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides

The focus of this study was to demonstrate the vapor-phase halogenation of Si(100) and subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer deposition (ALD) of aluminum oxide (Al2O3). Hydrogen-terminated silicon ⟨100⟩ (H-Si(100)) was halogenated using N-chlorosuccinimide (NCS), N-bromosuccinimide (NBS), and N-iodosuccinimide (NIS) in a vacuum-based chemical process. The composition and physical properties of the prepared monolayers were analyzed by using X-ray photoelectron spectroscopy (XPS) and contact angle (CA) goniometry. These measurements confirmed that all three reagents were more effective in halogenating H-Si(100) over OH-Si(100) in the vapor phase. The stability of the modified surfaces in air was also tested, with the chlorinated surface showing the greatest resistance to monolayer degradation and silicon oxide (SiO2) generation within the first 24 h of exposure to air. XPS and atomic force microscopy (AFM) measurements showed that the succinimide-derived Hal-Si(100) surfaces exhibited blocking ability superior to that of H-Si(100), a commonly used ALD resist. This halogenation method provides a dry chemistry alternative for creating halogen-based ALD resists on Si(100) in near-ambient environments.

How dissociated fragments of multiatomic molecules saturate all active surface sites-H2O adsorption on the Si(100) surface

A fundamental question for the adsorption of any gas molecule on surfaces is its saturation coverage, whose value can provide a comprehensive examination for the adsorption mechanisms, dynamic and kinetic processes involved in the adsorption processes. This investigation utilizes scanning tunneling microscopy to visualize the H₂O adsorption processes on the Si(100) surface with a sub-monolayers (<0.05 ML) of chemically-reactive dangling bonds remaining after exposure to (1) a hydrogen atomic beam, (2) H₂O, and (3) Cl₂gases at room temperature. In all three cases, each of the remaining isolated single dangling bonds (sDB) adsorb and is passivated by either of the two dissociation fragments, the H or OH radical, to form a surface Si-H and Si-OH species. A new adsorption mechanism, termed 'dissociative and asynchronous chemisorption', is proposed for the observation presented herein. Upon approaching a sDB site, the H₂O molecule breaks apart into two fragments. One is chemisorbed to the sDB. The other attaches to the same or the neighboring passivated dimer to form a transition state of surface diffusion, which then diffuses on the mostly passivated surface and is eventually chemisorbed to another reactive site. In other words, the chemisorption reactions of the two fragments after dissociation occur at different and uncorrelated time and places. This adsorption mechanism suggests that a diffusion transition state can be an adsorption product in the first step of the dissociative adsorption processes.

Reactivity of the Si(100)-2 × 1-Cl surface with respect to PH3, PCl3, and BCl3: comparison with PH3on Si(100)-2 × 1-H

Despite the interest in a chlorine monolayer on Si(100) as an alternative to hydrogen resist for atomic-precision doping, little is known about its interaction with dopant-containing molecules. We used the density functional theory to evaluate whether a chlorine monolayer on Si(100) is suitable as a resist for PH₃, PCl₃, and BCl₃molecules. We calculated reaction pathways for PH₃, PCl₃, and BCl₃adsorption on a bare and Cl-terminated Si(100)-2 × 1 surface, as well as for PH₃adsorption on H-terminated Si(100)-2 × 1, which is widely used in current technologies for atomically precise doping of Si(100) with phosphorus. It was found that the Si(100)-2 × 1-Cl surface has a higher reactivity toward phosphine than Si(100)-2 × 1-H, and, therefore, unpatterned areas are less protected from undesirable incorporation of PH₃fragments. On the contrary, the resistance of the Si(100)-2 × 1-Cl surface against the chlorine-containing molecules turned out to be very high. Several factors influencing reactivity are discussed. The results reveal that phosphorus and boron trichlorides are well-suited for doping a patterned Cl-resist by donors and acceptors, respectively.

Reaction of BCl3 with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry

The reaction of boron trichloride with the H and Cl-terminated Si(100) surfaces was investigated to understand the interaction of this molecule with the surface for designing wet-chemistry based silicon surface doping processes using a carbon- and oxygen-free precursor. The process was followed with X-ray photoelectron spectroscopy (XPS). Within the reaction conditions investigated, the reaction is highly effective on Cl-Si(100) for temperatures below 70°C, at which point both surfaces react with BCl₃. The XPS investigation followed the formation of a B 1s peak at 193.5 eV corresponding to (B-O)_x species. Even the briefest exposure to ambient conditions lead to hydroxylation of surface borochloride species. However, the Si 2p signature at 102 eV allowed for a confirmation of the formation of a direct Si-B bond. Density functional theory was utilized to supplement the analysis and identify possible major surface species resulting from these reactions. This work provides a new pathway to obtain a functionalized silicon surface with a direct Si-B bond that can potentially be exploited as a means of selective, ultra-shallow, and supersaturated doping.

Preferred growth direction of III-V nanowires on differently oriented Si substrates

One of the nanowire (NW) characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs NWs. We first studied the self-catalyzed GaAs NW growth on Si (111) and Si (001) substrates. SEM observations show GaAs NWs on Si (001) are grown along four <111> directions without preference on one or some of them. This non-preferential NW growth on Si (001) is morphologically in contrast to the extensively reported vertical <111> preferred GaAs NW growth on Si (111) substrates. We propose a model based on the initial condition of an ideal Ga droplet formation on Si substrates and the surface free energy calculation which takes into account the dangling bond surface density for different facets. This model provides further understanding of the different preferences in the growth of GaAs NWs along selected <111> directions depending on the Si substrate orientation. To verify the prevalence of the model, NWs were grown on Si (311) substrates. The results are in good agreement with the three-dimensional mapping of surface free energy by our model. This general model can also be applied to predictions of NW preferred growth directions by the vapor-liquid-solid growth mode on other group IV and III-V substrates.

Stability, geometry and electronic properties of BH n (n = 0 to 3) radicals on the Si{0 0 1}3 × 1:H surface from first-principles

A new generation of radiation detectors relies on the crystalline Si and amorphous B (c-Si/a-B) junctions that are prepared through chemical vapor deposition of diborane (B₂H₆) on Si at low temperature (~400 °C). The Si wafer surface is dominated by the Si{0 0 1}3  ×  1 domains that consist of two different Si species at low temperature. Here we investigate the geometry, stability and electronic properties of the hydrogen passivated Si{0 0 1}3  ×  1 surfaces with deposited BH _n (n  =  0 to 3) radicals using parameter-free first-principles approaches. Ab initio molecular dynamics simulations using the density functional theory (DFT) including van der Waals interaction reveal that in the initial stage the BH₃ molecules/radicals deposit on the Si(-H), forming (-Si)BH₄ radicals which then decompose into (-Si)BH₂ with release of H₂ molecules. Structural optimizations provide strong local relaxation and reconstructions at the deposited Si surface. Electronic structure calculations reveal the formation of various defect states in the forbidden gap. This indicates limitations of the presently used rigid electron-counting and band-filling models. The attained information enhances our understanding of the initial stage of the PureB process and the electric properties of the products.

A dipole-dipole interaction tuning the photoluminescence of silicon quantum dots in a water vapor environment

The optical properties of silicon quantum dots (Si QDs) depend on the working conditions, which are critical for their application in optoelectronic devices and fluorescent tags. However, how a humid environment, most common in daily life, influences the photoluminescence (PL) of Si QDs has not been fully understood yet. Herein, we applied time-dependent density functional calculations to show that the adsorption of water molecules would exhibit distinct effects on the PL spectra of Si QDs as a function of size. In particular, the PL of Si QDs presents dual band emission with the adsorption of the cyclic water trimer (H2O)3 under common humid conditions, completely different from the PL of Si QDs under other conditions. The transition dipole moment decomposition analysis shows that the additional emission peak originates from the single Si-Si stretched bond of Si QDs induced by the dipole-dipole interaction between the cyclic water trimer and Si QDs. Moreover, the PL characteristics are size dependent. As the size increases from Si17H24 (the diameter of 0.6 nm) to Si52H52 (1.4 nm), the dipole-dipole interaction energy between (H2O)3 and Si QDs rapidly decreases from 19.1 × 10-22 J to 6.0 × 10-26 J, resulting in a single peak of PL of (H2O)3 adsorption on Si52H52. This study not only gives a deep understanding of PL of Si QDs under humid conditions, but also provides a new perspective on the development of optical devices based on Si QDs.

Excited state dynamics study of the self-trapped exciton formation in silicon nanosheets

After excitation to S₁ (1), the exciton takes ∼450–850 femtoseconds to relax into the self-trapped (ST) state (2) with the occurrence of strong localization and a large Stokes shift, due to the significant stretching of the Si–Si bonds.

Monolayer of Hydrazine Facilitates the Direct Covalent Attachment of C60 Fullerene to a Silicon Surface

The development of oxygen-free organic-inorganic interfaces has led to new schemes for the functionalization of silicon surfaces with nitrogen-based chemical groups. However, building layers of large structures directly on this functionalized surface has remained elusive. This work confirms the path to form a stable interface between silicon and buckminsterfullerene C₆₀ based on covalent chemical bonds. The starting point for this modification is the hydrazine-reacted Si(111) surface with the diamine functionality, which is further reacted directly with the C₆₀ molecules. The chemistry of this process is confirmed spectroscopically and microscopically and can be used to form organic-inorganic interfaces separated by a single layer of nitrogen.

Silver Deposition onto Modified Silicon Substrates

Trimethylphosphine(hexafluoroacetylacetonato)silver(I) was used as a precursor to deposit silver onto silicon surfaces. The deposition was performed on silicon-based substrates including silica, H-terminated Si(100), and OH-terminated (oxidized) Si(100). The deposition processes at room temperature and elevated temperature (350 °C) were compared. The successful deposition resulted in nanostructures or nanostructured films as confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM) with metallic silver being the majority deposited species as confirmed by X-ray photoelectron spectroscopy (XPS). The reactivity of the precursor depends drastically not only on the temperature of the process but also on the type of substrate. Density functional theory (DFT) was used to explain these differences and to propose the mechanisms for the initial deposition steps.

Ethoxy and silsesquioxane derivatives of antimony as dopant precursors: unravelling the structure and thermal stability of surface species on SiO2

We report here the controlled preparation of SiO₂ supported Sb-(mono)layers and their thorough characterization (in situ IR, solid-state NMR, elemental analyses) for the non-destructive Sb-doping of semiconductors.

Effect of Water Adsorption on the Photoluminescence of Silicon Quantum Dots

The optical properties of silicon quantum dots (Si QDs) are strongly influenced by circumjacent surface-adsorbed molecules, which would highly affect their applications; however, water, as the ubiquitous environment, has not received enough attention yet. We employed the time-dependent density functional calculations to investigate the water effect of photoluminescence (PL) spectra for Si QDs. In contrast with the absorption spectra, PL spectra exhibit distinct characteristics. For Si32H38, PL presents the single maximum in the dry and humid environment, while the emission spectrum displays a dual-band fluorescence spectroscopy in the low-humidity environment. This phenomenon is also observed in the larger Si QDs. The distinct character in spectroscopy is dominated by the stretching of the Si-Si bond, which could be explained by the self-trapped exciton model. Our results shed light on the Si-water interaction that is important for the development of optical devices based on Si-coated surfaces.

Dehydrohalogenation Condensation Reaction of Phenylhydrazine with Cl-Terminated Si(111) Surfaces

Formation of stable organic-inorganic contacts with silicon often requires oxygen- and carbon-free interfaces. Some of the general approaches to create such interfaces rely on the formation of a Si-N bond. A reaction of dehydrohalogenation condensation of Cl-terminated Si(111) surface with phenylhydrazine is investigated as a means to introduce a simple function to the surface using a -NH-NH₂ moiety as opposed to previously investigated approaches. The use of substituted hydrazine allows for the formation of a stable structure that is less strained compared to the previously investigated primary amines and leads to minimal surface oxidation. The process is confirmed by a combination of infrared studies, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry investigations. Density functional theory is utilized to yield a plausible surface reaction mechanism and provide a set of experimental observables to compare with these data.

Transparent superwetting nanofilms with enhanced durability at model physiological condition

There have been many studies on superwetting surfaces owing to the variety of their potential applications. There are some drawbacks to developing these films for biomedical applications, such as the fragility of the microscopic roughness feature that is vital to ensure superwettability. But, there are still only a few studies that have shown an enhanced durability of nanoscale superwetting films at certain extreme environment. In this study, we fabricated intrinsically stable superwetting films using the organosilicate based layer-by-layer (LbL) self-assembly method in order to control nano-sized roughness of the multilayer structures. In order to develop mechanically and chemically robust surfaces, we successfully introduced polymeric silsesquioxane as a building block for LbL assembly with desired fashion. Even in the case that the superhydrophobic outer layers were damaged, the films maintained their superhydrophobicity because of the hydrophobic nature of their inner layers. As a result, we successfully fabricated superwetting nano-films and evaluated their robustness and stability.

Role of the Deposition Precursor Molecules in Defining Oxidation State of Deposited Copper in Surface Reduction Reactions on H-Terminated Si(111) Surface

Surface-limited deposition reactions leading to the formation of copper nanoparticles on H-terminated Si(111) surface can serve as a model for understanding the role of structure of the deposition precursor molecules in determining the oxidation state of the metal deposited. This study compares three different precursor molecules: Cu(acac)₂ (Cu(II) acetylacetonate), Cu(hfac)₂, and Cu(hfac)VTMS (Cu(I)-(hexafluoroacetylacetonato)-vinyltrimethylsilane) as copper deposition sources in a process with a controlled oxidation state of copper. X-ray photoelectron spectroscopy suggests that single-electron reduction governs the deposition of Cu(I) from the first two precursor molecules and that the last of the precursors studied yields predominantly metallic copper. Time-of-fight secondary ion mass spectrometry (ToF-SIMS) and infrared spectroscopy are utilized to interrogate surface species produced. Atomic force microscopy is used to quantify the deposition process and to follow the size distribution of the deposited copper containing nanoparticles. A plausible explanation supported by density functional theory calculations is offered on the basis of the difference in the reaction pathways for Cu(I) and Cu(II) precursors.

Efficient Direct Reduction of Graphene Oxide by Silicon Substrate

Graphene has been studied for various applications due to its excellent properties. Graphene film fabrication from solutions of graphene oxide (GO) have attracted considerable attention because these procedures are suitable for mass production. GO, however, is an insulator, and therefore a reduction process is required to make the GO film conductive. These reduction procedures require chemical reducing agents or high temperature annealing. Herein, we report a novel direct and simple reduction procedure of GO by silicon, which is the most widely used material in the electronics industry. In this study, we also used silicon nanosheets (SiNSs) as reducing agents for GO. The reducing effect of silicon was confirmed by various characterization methods. Furthermore, the silicon wafer was also used as a reducing template to create a reduced GO (rGO) film on a silicon substrate. By this process, a pure rGO film can be formed without the impurities that normally come from chemical reducing agents. This is an easy and environmentally friendly method to prepare large scale graphene films on Si substrates.

Atomically Traceable Nanostructure Fabrication

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

The nature of photocatalytic "water splitting" on silicon nanowires

Silicon should be an ideal semiconductor material if it can be proven usable for photocatalytic water splitting, given its high natural abundance. Thus it is imperative to explore the possibility of water splitting by running photocatalysis on a silicon surface and to decode the mechanism behind it. It is reported that hydrogen gas can indeed be produced from Si nanowires when illuminated in water, but the reactions are not a real water-splitting process. Instead, the production of hydrogen gas on the Si nanowires occurs through the cleavage of Si-H bonds and the formation of Si-OH bonds, resulting in the low probability of generating oxygen. On the other hand, these two types of surface dangling bonds both extract photoexcited electrons, whose competition greatly impacts on carrier lifetime and reaction efficiency. Thus surface chemistry holds the key to achieving high efficiency in such a photocatalytic system.

Ammonia photodissociation promoted by Si(100)

Using in situ X-ray photoelectron spectroscopy measurements after reaction, we show that hydrogen-terminated Si(100) perturbs the bonding of physisorbed NH3 enabling a photochemical decomposition pathway at wavelengths different from those characteristic of either the molecule in the gas phase or the semiconductor bandgap. UV illumination only of gas phase NH3 at partial pressures from 0.1 to 100 Torr produced a maximum at 10 Torr in the N surface coverage. This is in good agreement with a model of the radical production rate showing that at this pressure the gas density balances the flux of photons at the surface with energies sufficient to dissociate NH3. UV illumination of both the gas phase and the surface produced a monotonic increase in the N coverage with pressure as well as coverages that were 3-10 times higher than when only the gas phase was illuminated. The amine saturation coverage scaled with the UV fluence at 10 Torr and 75 °C, reaching 6.9 × 10(14) atoms/cm(2) (∼1 N atom per Si surface atom) at 19 mW/cm(2) and 12 × 10(14) atoms/cm(2) (∼1.8 N per Si) at 35 mW/cm(2). Monochromatic illumination showed that the wavelengths driving deposition were not correlated with the Si bandgap, but instead were roughly the same as gas phase photodissociation (λ < 220 nm). The primary driving force to replace the hydrogen termination with amine groups was direct photodissociation of NH3 molecules whose electronic structure was perturbed by interaction with the surface. Amine groups enhanced the surface reaction of water present as a contaminant in the source gas. These results show that molecules in weakly bound surface states can have a dramatic impact on the photochemistry.

N-Bromosuccinimide-based bromination and subsequent functionalization of hydrogen-terminated silicon quantum dots

N-Bromosuccinimide based bromination is proven to be an effective and mild intermediate step to produce surface functionalized, red-emitting, colloidal SiQDs.

Silicon surface functionalization targeting Si-N linkages

Silicon substrates have been a fascinating topic of fundamental and applied research for well over 50 years. They have attracted even more attention over the last couple of decades with advances in chemical functionalization that made oxide-free silicon surfaces a reality. Fundamentally new electronic properties and chemical reactivity became available, and the focus of chemical research turned more toward targeting specific chemical bonds and functionalities on silicon. Although thermodynamics clearly drives most processes under ambient conditions toward the formation of an oxide layer, kinetic control of the oxidation processes and thermodynamic tricks based on gaining stability of surface monolayers with high-density assembly have allowed for the formation of stable Si-C bonds and Si-O-C linkages on oxide-free silicon crystals. This feature article targets recent advances in making Si-N linkages on the same oxide-free single crystals. It covers the range of chemical approaches to achieving this goal and offers possible chemistry that can take advantage of the systems produced. The present status of the field and the future directions of its development will be considered.

Fundamental role of the H-bond interaction in the dissociation of NH3 on Si(001)-(2×1)

Further insight into the dissociative adsorption of NH3 on Si(001) has been obtained using a combined computational and experimental approach. A novel route leading to the dissociation of the chemisorbed NH3 is proposed, based on H-bonding interactions between the gas phase and the chemisorbed NH3 molecules. Our model, complemented by synchrotron radiation photoelectron spectroscopy measurements, demonstrates that the low temperature dissociation of molecular chemisorbed NH3 is driven by the continuous flux of ammonia molecules from the gas phase.

On the mechanism of silicon activation by halogen atoms

Despite the widespread use of chlorinated silicon as the starting point for further functionalization reactions, the high reactivity of this surface toward a simple polar molecule such as ammonia still remains unclear. We therefore undertook a comprehensive investigation of the factors that govern the reactivity of halogenated silicon surfaces. The reaction of NH3 was investigated comparatively on the Cl-Si(100)-2 × 1, Br-Si(100)-2 × 1, H-Si(100)-2 × 1, and Si(100)-2 × 1 surfaces using density functional theory. The halogenated surfaces show considerable activation with respect to the hydrogenated surface. The reaction on the halogenated surfaces proceeds via the formation of a stable datively bonded complex in which a silicon atom is pentacoordinated. The activation of the halogenated Si(100)-2 × 1 surfaces toward ammonia arises from the large redistribution of charge in the transition state that precedes the breakage of the Si-X bond and the formation of the Si-NH2 bond. This transition state has an ionic nature of the form Si-NH3(+)X(-). Steric effects also play an important role in surface reactivity, making brominated surfaces less reactive than chlorinated surfaces. The overall activation-energy barriers on the Cl-Si(100)-2 × 1 and Br-Si(100)-2 × 1 surfaces are 12.3 and 19.9 kcal/mol, respectively, whereas on the hydrogenated Si(100)-2 × 1 surface the energy barrier is 38.3 kcal/mol. The reaction of ammonia on the chlorinated surface is even more activated than on the bare Si(100)-2 × 1 surface, for which the activation barrier is 21.3 kcal/mol. Coadsorption effects in partially aminated surfaces and in the presence of reaction products increase activation-energy barriers and have a blocking effect for further reactions of NH3.

Metallic nanostructure formation limited by the surface hydrogen on silicon

Constant miniaturization of electronic devices and interfaces needed to make them functional requires an understanding of the initial stages of metal growth at the molecular level. The use of metal-organic precursors for metal deposition allows for some control of the deposition process, but the ligands of these precursor molecules often pose substantial contamination problems. One of the ways to alleviate the contamination problem with common copper deposition precursors, such as copper(I) (hexafluoroacetylacetonato) vinyltrimethylsilane, Cu(hfac)VTMS, is a gas-phase reduction with molecular hydrogen. Here we present an alternative method to copper film and nanostructure growth using the well-defined silicon surface. Nearly ideal hydrogen termination of silicon single-crystalline substrates achievable by modern surface modification methods provides a limited supply of a reducing agent at the surface during the initial stages of metal deposition. Spectroscopic evidence shows that the Cu(hfac) fragment is present upon room-temperature adsorption and reacts with H-terminated Si(100) and Si(111) surfaces to deposit metallic copper. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are used to follow the initial stages of copper nucleation and the formation of copper nanoparticles, and X-ray energy dispersive spectroscopy (XEDS) confirms the presence of hfac fragments on the surfaces of nanoparticles. As the surface hydrogen is consumed, copper nanoparticles are formed; however, this growth stops as the accessible hydrogen is reacted away at room temperature. This reaction sets a reference for using other solid substrates that can act as reducing agents in nanoparticle growth and metal deposition.