Xe interacting with porous silicon

Distribution of Weakly Interacting Atoms and Molecules in Low-Temperature Amorphous Solid Water

Understanding the distribution and mixing of atoms and molecules in amorphous solid water (ASW) at low temperatures is relevant to the exploration of the astrochemical environment in the interstellar medium (ISM) that leads to the formation of new complex molecules. In this study, a combination of temperature programmed desorption (ΔP-TPD) experiments and Ne⁺ ion sputtering is used to determine the extent of mixing and distribution of guest atoms and molecules within thin ASW films deposited at 35 K on a Ru(0001) substrate, prior to sputtering. The mixing of krypton atoms and methyl chloride molecules within thin ASW films is directed by the physical properties of the respective species and the nature of their interaction with the host water molecules. While the Kr-H₂O interaction may be described as a weak van der Waals attraction, the CD₃Cl-H₂O interaction can be characterized as weakly hydrophobic in nature. This leads to differences in the level of homogeneity in mixing and distribution of the guest species in the ASW film. Both krypton atoms and methyl chloride molecules reveal a propensity to migrate toward the ASW-vacuum interface. The krypton atoms migrate through both diffusion and displacement by incoming H₂O molecules, while the methyl chloride molecules tend to move toward the vacuum interface primarily via displacement. This behavior results in more homogeneous mixing of Kr in ASW at 35 K compared to the dipole moment containing molecule CD₃Cl. As a general outcome of our study, it is observed that mixing in ASW at low temperatures is more homogeneous when the guest atom/molecule is inert and does not possess a constant dipole moment.

Electron-induced chemistry of methyl chloride caged within amorphous solid water

The interaction of low energy electrons (1.0-25 eV) with methyl-chloride (CD3Cl) molecules, caged within Amorphous Solid Water (ASW) films, 10-120 monolayer (ML) thick, has been studied on top of a Ru(0001) substrate under Ultra High Vacuum (UHV) conditions. While exposing the ASW film to 3 eV electrons a static electric field up to 8 × 10(8) V∕m is developed inside the ASW film due to the accumulation of trapped electrons that produce a plate capacitor voltage of exactly 3 V. At the same time while the electrons continuously strike the ASW surface, they are transmitted through the ASW film at currents of ca. 3 × 10(-7) A. These electrons transiently attach to the caged CD3Cl molecules leading to C-Cl bond scission via Dissociative Electron Attachment (DEA) process. The electron induced dissociation cross sections and product formation rate constants at 3.0 eV incident electrons at ASW film thicknesses of 10 ML and 40 ML were derived from model simulations supported by Thermal Programmed Desorption (TPD) experimental data. For 3.0 eV electrons the CD3Cl dissociation cross section is 3.5 × 10(-16) cm(2), regardless of ASW film thickness. TPD measurements reveal that the primary product is deuterated methane (D3CH) and the minor one is deuterated ethane (C2D6).

Photoinduced desorption of Xe from porous Si following ultraviolet irradiation: evidence for a selective and highly effective optical activity

Photoinduced desorption (PID) of Xe from porous silicon (PSi) following UV irradiation has been studied. A nonthermal, morphology, and wavelength dependent phenomenon with more than 3 orders of magnitude enhancement of Xe PID within pores over atoms adsorbed on top of flat surfaces has been recorded, displaying extraordinary large cross sections up to σ(Xe/PSi)=2×10(-15)  cm(2). A long-lived, photoinduced, charge separated silicon-xenon complex is proposed as the precursor for this remarkable photodesorption process.