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Iwasaki S, Hoshino M, Morito H, Kumagai M, Katsura Y, Jeem M, Ono M, Nishii J, Fujioka M. Electric Transport Properties of NaAlB 14 with Covalent Frameworks. Inorg Chem 2022; 61:4378-4383. [PMID: 35230836 DOI: 10.1021/acs.inorgchem.1c03722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
A synthetic protocol was developed for obtaining a single phase of polycrystalline NaAlB14 with strongly connected intergrain boundaries. NaAlB14 has a unique crystal structure with a tunnel-like covalent framework of B that traps monovalent Na and trivalent Al ions. Owing to the atmospheric instability and volatility of Na, the synthesis of polycrystalline NaAlB14 and its physical properties have not been reported yet. This study employed a two-step process to achieve single-phase polycrystalline NaAlB14. As a first step, a mixture of Al and B with excess Al was sintered in the Na vapor atmosphere followed by HCl treatment to remove excess Al as a second step. For obtaining bulk samples with strong grain connection, vacuum or high-pressure (HP) annealing was employed. HP annealing promoted bandgap shrinkage due to the crystal strain and defect levels and suppressed intergranular resistance. As a result, the HP-annealed sample achieved superior transport properties (0.1 kΩ cm at 300 K) to the vacuum-annealed sample (260 kΩ cm). Furthermore, from the viewpoint of its crystal structure and DFT calculations, the most probable site for the defect was suggested to be the Na site.
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Affiliation(s)
- Suguru Iwasaki
- Research Institute for Electronic Science, Hokkaido University, Kita 20, Nishi 10, Kita-ku, Sapporo 001-0020, Japan
| | - Mihiro Hoshino
- Research Institute for Electronic Science, Hokkaido University, Kita 20, Nishi 10, Kita-ku, Sapporo 001-0020, Japan
| | - Haruhiko Morito
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| | - Masaya Kumagai
- SAKURA Internet Inc., 4-20 Ofukacho, Kita-ku, Osaka 530-0011, Japan
| | - Yukari Katsura
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Melbert Jeem
- Research Institute for Electronic Science, Hokkaido University, Kita 20, Nishi 10, Kita-ku, Sapporo 001-0020, Japan
| | - Madoka Ono
- Research Institute for Electronic Science, Hokkaido University, Kita 20, Nishi 10, Kita-ku, Sapporo 001-0020, Japan
| | - Junji Nishii
- Research Institute for Electronic Science, Hokkaido University, Kita 20, Nishi 10, Kita-ku, Sapporo 001-0020, Japan
| | - Masaya Fujioka
- Research Institute for Electronic Science, Hokkaido University, Kita 20, Nishi 10, Kita-ku, Sapporo 001-0020, Japan
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Morito H, Ikeda T, Katsura Y, Yamane H. Na3MgB37Si9: an icosahedral B12 cluster framework containing {Si8} units. ACTA CRYSTALLOGRAPHICA SECTION E CRYSTALLOGRAPHIC COMMUNICATIONS 2022; 78:203-206. [PMID: 35145751 PMCID: PMC8819436 DOI: 10.1107/s2056989022000494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Accepted: 01/13/2022] [Indexed: 11/30/2022]
Abstract
Single crystals of a novel boride silicide, Na3MgB37Si9, containing B12 icosahedra and Si8 units were synthesized from Na, B, Si, B2O3 and magnesium vapor. Single crystals of a novel sodium–magnesium boride silicide, Na3MgB37Si9 [a = 10.1630 (3) Å, c = 16.5742 (6) Å, space group Rm (No. 166)], were synthesized by heating a mixture of Na, Si and crystalline B with B2O3 flux in Mg vapor at 1373 K. The Mg atoms in the title compound are located at an interstitial site of the Dy2.1B37Si9-type structure with an occupancy of 0.5. The (001) layers of B12 icosahedra stack along the c-axis direction with shifting in the [–a/3, b/3, c/3] direction. A three-dimensional framework structure of the layers is formed via B—Si bonds and {Si8} units of [Si]3—Si—Si—[Si]3.
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Hübner JM, Jung W, Schmidt M, Bobnar M, Koželj P, Böhme B, Baitinger M, Etter M, Grin Y, Schwarz U. Cage Adaption by High-Pressure Synthesis: The Clathrate-I Borosilicide Rb 8B 8Si 38. Inorg Chem 2021; 60:2160-2167. [PMID: 33104343 PMCID: PMC7887739 DOI: 10.1021/acs.inorgchem.0c02357] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Rb8B8Si38 forms under high-pressure, high-temperature conditions at p = 8 GPa and T = 1273 K. The new compound (space group Pm3̅n, a = 9.9583(1) Å) is the second example for a clathrate-I borosilicide. The phase is inert against strong acids and bases and thermally stable up to 1300 K at ambient pressure. (Rb+)8(B-)8(Si0)38 is electronically balanced, diamagnetic, and shows semiconducting behavior with moderate Seebeck coefficient below 300 K. Chemical bonding analysis by the electron localizability approach confirms the description of Rb8B8Si38 as Zintl phase.
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Affiliation(s)
- Julia-Maria Hübner
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Walter Jung
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Marcus Schmidt
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Matej Bobnar
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Primož Koželj
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Bodo Böhme
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Michael Baitinger
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Martin Etter
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Yuri Grin
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
| | - Ulrich Schwarz
- Department of Chemical Metals Science, Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, Dresden 01187, Germany
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Terauchi M, Morito H, Yamane H, Koshiya S, Kimoto K. Soft X-ray emission spectroscopy study of electronic structure of sodium borosilicide Na8B74.5Si17.5. Microscopy (Oxf) 2018; 67:i72-i77. [PMID: 29370378 DOI: 10.1093/jmicro/dfx132] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2017] [Accepted: 12/25/2017] [Indexed: 11/13/2022] Open
Abstract
Chemical bonding state of sodium borosilicide Na8B74.5Si17.5, which is a new member of B12-cluster materials, is investigated by soft X-ray emission spectroscopy. The material is composed of B12 cluster network and characteristic silicon chains of [-Si-(Si-Si)3-Si-] connected by sp3 bonding, in which bonding distances and bonding angles are close to those in cubic Si crystal. B K-emission spectrum of the material showed a similar but a broader intensity distribution with those of B12 cluster materials of α-r-B, B4C and β-r-B. The broader intensity distribution can be due to a variation of B-B bond length in B12 cluster. The density of states (DOS) of silicon chains of [-Si-(Si-Si)3-Si-] was experimentally derived. It shows a similar energy width, and peak or shoulder structures in intensity distribution with those of L-emission spectrum of cubic Si. From comparisons between experimental spectra and corresponding calculated DOS, covalent bonding between Si chain and B12 cluster network is suggested. Those are discussed by using a theoretically calculated density of state of Na8B74.5Si17.5 by using WIEN2k code.
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Affiliation(s)
- Masami Terauchi
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| | - Haruhiko Morito
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| | - Hisanori Yamane
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
| | - Shogo Koshiya
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Koji Kimoto
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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Morito H, Uchikoshi M, Yamane H. Boron removal by dissolution and recrystallization of silicon in a sodium–silicon solution. Sep Purif Technol 2013. [DOI: 10.1016/j.seppur.2013.08.022] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Zeilinger M, van Wüllen L, Benson D, Kranak VF, Konar S, Fässler TF, Häussermann U. LiBSi2: A Tetrahedral Semiconductor Framework from Boron and Silicon Atoms Bearing Lithium Atoms in the Channels. Angew Chem Int Ed Engl 2013; 52:5978-82. [DOI: 10.1002/anie.201301540] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2013] [Indexed: 11/07/2022]
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Zeilinger M, van Wüllen L, Benson D, Kranak VF, Konar S, Fässler TF, Häussermann U. LiBSi2: A Tetrahedral Semiconductor Framework from Boron and Silicon Atoms Bearing Lithium Atoms in the Channels. Angew Chem Int Ed Engl 2013. [DOI: 10.1002/ange.201301540] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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